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Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films

Chemistry of materials, 2010-05, Vol.22 (10), p.3060-3066

2010

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Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs)

Journal of the Electrochemical Society, 2012, Vol.159 (6), p.D382-D385

2012

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Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

ECS journal of solid state science and technology, 2012-01, Vol.1 (5), p.N79-N84

2012

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Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE

Journal of crystal growth, 2007, Vol.298, p.172-175

2007

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Novel Hf and La Formamidinates for ALD Application

MRS proceedings, 2009, Vol.1155 (1), Article 1155-C04-04

2009

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Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films

Journal of the Electrochemical Society, 2010, Vol.157 (6), p.H679

2010

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Novel Zirconium Formamidinate Precursor for the ALD of ZrO2

MRS proceedings, 2009, Vol.1194 (1), p.40-48

2009

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Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds

Journal of crystal growth, 2003-02, Vol.248, p.91-98

2003

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GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium

Journal of crystal growth, 2003-02, Vol.248, p.82-85

2003

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Effects of O 3 and H 2 O oxidants on C and N-related impurities in atomic-layer-deposited La 2 O 3 films observed by in situ x-ray photoelectron spectroscopy

Applied physics letters, 2010-09, Vol.97 (9), p.092904-092904-3

2010

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Effects of O{sub 3} and H{sub 2}O oxidants on C and N-related impurities in atomic-layer-deposited La{sub 2}O{sub 3} films observed by in situ x-ray photoelectron spectroscopy

Applied physics letters, 2010-08, Vol.97 (9)

2010

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Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy

Applied physics letters, 2010-08, Vol.97 (9)

2010

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Novel Zirconium Formamidinate Precursor for the ALD of ZrO 2

MRS proceedings, 2009, Vol.1194, Article 1194-A05-10

2009

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Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

ECS transactions, 2007-07, Vol.3 (15), p.37-49

2007

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Development of Novel Germanium Compounds for Use in SiGe Epitaxy

ECS transactions, 2006, Vol.3 (7), p.867-873

2006

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The Deposition of Polycrystalline SiGe with Different Ge Precursors

ECS transactions, 2006, Vol.3 (7), p.849-860

2006

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New Ni Amidinate Source for ALD/CVD of Ni Containing Films

Meeting abstracts (Electrochemical Society), 2011-08, Vol.MA2011-02 (26), p.1866-1866

2011

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Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Electrochemical and solid-state letters, 2009, Vol.12 (4), p.G13

2009

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Developmet of New Germanium Compounds for Use in SiGe

Meeting abstracts (Electrochemical Society), 2006-06, Vol.MA2006-02 (31), p.1413-1413

2006

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Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films

Electrochemical and solid-state letters, 2011, Vol.14 (5), p.G23

2011

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Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

Meeting abstracts (Electrochemical Society), 2006-06, Vol.MA2006-02 (21), p.1063-1063

2006

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The Deposition of Polycrystalline SiGe with Different Ge Precursors

Meeting abstracts (Electrochemical Society), 2006-06, Vol.MA2006-02 (31), p.1487-1487

2006

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Ge Precursors for Strained Si and Compound Semiconductors

Semiconductor International, 2006-04, Vol.29 (4), p.39

2006

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Direct-Liquid-Injection Chemical Vapor Deposition of Nickel Nitride Films and Their Reduction to Nickel Films

Vapor Deposition of Highly Conformal Copper Seed Layers for Plating Through-Silicon Vias (TSVs)

Chemical Vapor Deposition of Cobalt Nitride and its Application as an Adhesion-Enhancing Layer for Advanced Copper Interconnects

Safer alternative liquid germanium precursors for relaxed graded SiGe layers and strained silicon by MOVPE

Novel Hf and La Formamidinates for ALD Application

Formation of Nickel Silicide from Direct-Liquid-Injection Chemical-Vapor-Deposited Nickel Nitride Films

Novel Zirconium Formamidinate Precursor for the ALD of ZrO2

Correlation of vapor pressure equation and film properties with trimethylindium purity for the MOVPE grown III–V compounds

GC/MS analyses of MOVPE precursors and characterization of impurities in trimethylindium, trimethylaluminum and bis(cyclopentadienyl)magnesium

Effects of O 3 and H 2 O oxidants on C and N-related impurities in atomic-layer-deposited La 2 O 3 films observed by in situ x-ray photoelectron spectroscopy

Effects of O{sub 3} and H{sub 2}O oxidants on C and N-related impurities in atomic-layer-deposited La{sub 2}O{sub 3} films observed by in situ x-ray photoelectron spectroscopy

Effects of O3 and H2O oxidants on C and N-related impurities in atomic-layer-deposited La2O3 films observed by in situ x-ray photoelectron spectroscopy

Novel Zirconium Formamidinate Precursor for the ALD of ZrO 2

Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

Development of Novel Germanium Compounds for Use in SiGe Epitaxy

The Deposition of Polycrystalline SiGe with Different Ge Precursors

New Ni Amidinate Source for ALD/CVD of Ni Containing Films

Atomic Layer Deposition of Lanthanum-Based Ternary Oxides

Developmet of New Germanium Compounds for Use in SiGe

Reduction of Residual C and N-Related Impurities by Al2O3 Insertion in Atomic-Layer-Deposited La2O3 Thin Films

Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

The Deposition of Polycrystalline SiGe with Different Ge Precursors

Ge Precursors for Strained Si and Compound Semiconductors

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