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Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator

Journal of applied physics, 2005-09, Vol.98 (5), p.053502-053502-5

2005

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Preparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a post thermal process

Microelectronic engineering, 2003-04, Vol.66 (1), p.451-456

2003

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Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer

Thin solid films, 2002-08, Vol.415 (1-2), p.64-67

2002

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Electrical and interfacial characteristics of nanolaminate (Al 2O 3/ZrO 2/Al 2O 3) gate stack on fully depleted SiGe-on-insulator

Materials science in semiconductor processing, 2006-12, Vol.9 (6), p.959-963

2006

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Preparation of AlN thin films by nitridation of Al-coated Si substrate

Thin solid films, 1999-02, Vol.340 (1), p.137-139

1999

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Interfacial stability between zirconium oxide thin films and silicon

Microelectronic engineering, 2003-04, Vol.66 (1), p.427-432

2003

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Study of silicon-on-insulator substrates incorporated with buried MoSi2 layer

Thin solid films, 2009-02, Vol.517 (8), p.2724-2728

2009

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Influence of Si buffer layer on the giant magnetoresistance effect in Co/Cu/Co sandwiches

Science China. Technological sciences, 2000-06, Vol.43 (3), p.225-231

2000

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Study of silicon-on-insulator substrates incorporated with buried MoSi 2 layer

Thin solid films, 2009, Vol.517 (8), p.2724-2728

2009

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Magnetic and Structural Properties in Co/Cu/Co Sandwiches with Ni and Cr Buffer Layers

材料科学技术学报(英文版), 2000-03, Vol.16 (2), p.195-196

2000

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Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-04, Vol.257 (1-2), p.501-504

2007

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Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric

Applied physics letters, 2005-03, Vol.86 (11)

2005

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Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-05, Vol.24 (3), p.1151-1155

2006

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Interfacial and electrical characteristics of Al 2 O 3 gate dielectric on fully depleted SiGe on insulator

Applied physics letters, 2005-06, Vol.86 (26), p.262102-262102-3

2005

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Studies on Al sub(2)O sub(3)/ZrO sub(2)/Al sub(2)O sub(3) high K gate dielectrics applied in a fully depleted SOI MOSFET

Metals and materials international, 2004-10, Vol.10 (5), p.475-478

2004

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Preparation of PZT on diamond by pulsed laser deposition with Al sub(2)O sub(3) buffer layer

Thin solid films, 2002-08, Vol.415 (1-2), p.64-67

2002

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Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator

Applied physics letters, 2005-06, Vol.86 (26)

2005

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Preparation of PZT on diamond by pulsed laser deposition with Al 2O 3 buffer layer

Thin solid films, 2002, Vol.415 (1), p.64-67

2002

Volltextzugriff (PDF)

Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a Hf O 2 ∕ Si O 2 stack as the tunnel dielectric

Applied physics letters, 2005-03, Vol.86 (11), p.113105-113105-3

2005

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Studies on Al2O3/ZrO2/Al2O3 high K gate dielectrics applied in a fully depleted SOI MOSFET

Metals and materials international, 2004-10, Vol.10 (5), p.475-478

2004

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Characterization of FeSi x film by codeposition on β-FeSi2 template

Applied physics letters, 1996-05, Vol.68 (20), p.2858-2860

1996

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Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

Journal of electronic materials, 1999-03, Vol.28 (3), p.225-227

1999

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Reactive deposition epitaxial growth of β-FeSi2 film on Si(111): In situ observation by reflective high energy electron diffraction

Applied physics letters, 1995-06, Vol.66 (25), p.3453-3455

1995

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STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF AlN THIN FILMS OBTAINED BY NITRIDATION OF Al/Si SUBSTRATE

Journal of electronic materials, 1999-03, Vol.28 (3), p.225-227

1999

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Reactive Deposition Epitaxial Growth of β-FeSi 2 Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction

Chinese physics letters, 1995-10, Vol.12 (10), p.613-616

1995

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Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator

Preparation of hafnium oxide thin film by electron beam evaporation of hafnium incorporating a post thermal process

Preparation of PZT on diamond by pulsed laser deposition with Al2O3 buffer layer

Electrical and interfacial characteristics of nanolaminate (Al 2O 3/ZrO 2/Al 2O 3) gate stack on fully depleted SiGe-on-insulator

Preparation of AlN thin films by nitridation of Al-coated Si substrate

Interfacial stability between zirconium oxide thin films and silicon

Study of silicon-on-insulator substrates incorporated with buried MoSi2 layer

Influence of Si buffer layer on the giant magnetoresistance effect in Co/Cu/Co sandwiches

Study of silicon-on-insulator substrates incorporated with buried MoSi 2 layer

Magnetic and Structural Properties in Co/Cu/Co Sandwiches with Ni and Cr Buffer Layers

Influence of nitrogen element on total-dose radiation response of high-k Hf-based dielectric films

Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a HfO2∕SiO2 stack as the tunnel dielectric

Thermal annealing effects on the structure and electrical properties of Al2O3 gate dielectrics on fully depleted SiGe on insulator

Interfacial and electrical characteristics of Al 2 O 3 gate dielectric on fully depleted SiGe on insulator

Studies on Al sub(2)O sub(3)/ZrO sub(2)/Al sub(2)O sub(3) high K gate dielectrics applied in a fully depleted SOI MOSFET

Preparation of PZT on diamond by pulsed laser deposition with Al sub(2)O sub(3) buffer layer

Interfacial and electrical characteristics of Al2O3 gate dielectric on fully depleted SiGe on insulator

Preparation of PZT on diamond by pulsed laser deposition with Al 2O 3 buffer layer

Investigation of Ge nanocrytals in a metal-insulator-semiconductor structure with a Hf O 2 ∕ Si O 2 stack as the tunnel dielectric

Studies on Al2O3/ZrO2/Al2O3 high K gate dielectrics applied in a fully depleted SOI MOSFET

Characterization of FeSi x film by codeposition on β-FeSi2 template

Structural and electrical characterization of AIN thin films obtained by nitridation of Al/Si substrate

Reactive deposition epitaxial growth of β-FeSi2 film on Si(111): In situ observation by reflective high energy electron diffraction

STRUCTURAL AND ELECTRICAL CHARACTERIZATION OF AlN THIN FILMS OBTAINED BY NITRIDATION OF Al/Si SUBSTRATE

Reactive Deposition Epitaxial Growth of β-FeSi 2 Film on Si(001): in situ Observation by Reflective High Energy Electron Diffraction

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