UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Journal of crystal growth, 2006-01, Vol.286 (2), p.209-212

2006

Volltextzugriff (PDF)

Enhanced performance of p-GaN by Mg δ doping

Journal of crystal growth, 2007-06, Vol.304 (1), p.7-10

2007

Volltextzugriff (PDF)

Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction

Solid-state electronics, 2007-06, Vol.51 (6), p.860-864

2007

Volltextzugriff (PDF)

Analysis for load limitation of square-shaped silicon diaphragms

Solid-state electronics, 2006-09, Vol.50 (9-10), p.1579-1583

2006

Volltextzugriff (PDF)

Experimental and numerical investigation on GaN/Al2O3 laser lift-off technique

Thin solid films, 2007-02, Vol.515 (7-8), p.3854-3857

2007

Volltextzugriff (PDF)

Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

Applied surface science, 2009-04, Vol.255 (12), p.6121-6124

2009

Volltextzugriff (PDF)

Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes

Journal of luminescence, 2007-12, Vol.127 (2), p.441-445

2007

Volltextzugriff (PDF)

Thin film AlGaInP light emitting diodes with different reflectors

Journal of semiconductors, 2010-12, Vol.31 (12), p.124013

2010

Volltextzugriff (PDF)

The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes

Solid-state electronics, 2006-03, Vol.50 (3), p.508-510

2006

Volltextzugriff (PDF)

ICP dry etching ITO to improve the performance of GaN-based LEDs

Journal of semiconductors, 2011, Vol.32 (1), p.65-68

孟丽丽陈依新马莉刘自可沈光地

2011

Volltextzugriff (PDF)

Enhanced output of flip-chip light-emitting diodes with a sidewall reflector

Solid-state electronics, 2007-05, Vol.51 (5), p.674-677

2007

Volltextzugriff (PDF)

Reliability of AlGaInP light emitting diodes with an ITO current spreading layer

Journal of semiconductors, 2009-06, Vol.30 (6), p.064004

2009

Volltextzugriff (PDF)

Thermal Characteristic of High Beam Quality Laser Diode Array

Zhōngguó jīguāng, 2010-10, Vol.37 (10), p.2497-2501

2010

Volltextzugriff (PDF)

Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening

Journal of semiconductors, 2010-11, Vol.31 (11), p.114011

2010

Volltextzugriff (PDF)

Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes

Science China. Information sciences, 2009-08, Vol.52 (8), p.1476-1482

2009

Volltextzugriff (PDF)

GaN-based light-emitting diodes with SiONx on sidewalls

Semiconductor science and technology, 2007-06, Vol.22 (6), p.659-662

2007

Volltextzugriff (PDF)

Absorption of photons in the thin film AlGaInP light emitting diode

Journal of semiconductors, 2011-01, Vol.32 (1), p.014012-1-3

2011

Volltextzugriff (PDF)

Interrupted Mg doping of GaN with MOCVD for improved p-type layers

Vacuum, 2007-09, Vol.82 (1), p.1-4

2007

Volltextzugriff (PDF)

AlGaInP LEDs with surface anti-reflecting structure

Journal of semiconductors, 2009-08, Vol.30 (8), p.084009

2009

Volltextzugriff (PDF)

Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask

Journal of semiconductors, 2010-06, Vol.31 (6), p.57-59

蒋文静徐晨沈光地方瑢高伟

2010

Volltextzugriff (PDF)

Steady-state thermal analysis of multi-active zone tunnel regeneration semiconductor laser

Qiang ji guang yu li zi shu, 2011-03, Vol.23 (3), p.817-820

2011

Volltextzugriff (PDF)

Study on the Small Signal Modulation Characteristic of Internal-Contact Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

Zhōngguó jīguāng, 2009-05, Vol.36 (5), p.1057-1061

2009

Volltextzugriff (PDF)

ZnSe by electron-beam evaporation used for facet passivation of high power laser diodes

Solid-state electronics, 2005-12, Vol.49 (12), p.2016-2017

2005

Volltextzugriff (PDF)

Thermal Property of High Power 980 nm InGaAs/InGaAsP/InGaP Laser Diodes

Zhōngguó jīguāng, 2009-06, Vol.36 (6), p.1356-1359

2009

Volltextzugriff (PDF)

Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Journal of semiconductors, 2009-05, Vol.30 (5), p.47-49

康玉柱李建军丁亮杨臻韩军邓军邹德恕沈光地

2009

Volltextzugriff (PDF)

1 – 25 von 104

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(59)
Mit Volltextzugriff
(96)

Publikationsform

Sprache

Erscheinungsjahr

n.n

Thema

Science & Technology
(73)
Physical Sciences
(51)
Technology
(42)
Physics
(40)
Engineering
(33)
Engineering, Electrical & Electronic
(31)
Materials Science
(30)
Physics, Condensed Matter
(28)
Materials Science, Multidisciplinary
(27)
Physics, Applied
(25)
Exact Sciences And Technology
(12)
Optics
(12)
Gallium Arsenide
(9)
Life Sciences & Biomedicine
(9)
Materials Science, Coatings & Films
(8)
Temperature
(8)
Doping
(7)
Germanium Silicon Alloys
(7)
Silicon Germanium
(7)
Vertical Cavity Surface Emitting Lasers
(7)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Enhanced performance of p-GaN by Mg δ doping

Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction

Analysis for load limitation of square-shaped silicon diaphragms

Experimental and numerical investigation on GaN/Al2O3 laser lift-off technique

Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

Effects of the passivation layer deposition temperature on the electrical and optical properties of GaN-based light-emitting diodes

Thin film AlGaInP light emitting diodes with different reflectors

The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes

ICP dry etching ITO to improve the performance of GaN-based LEDs

Enhanced output of flip-chip light-emitting diodes with a sidewall reflector

Reliability of AlGaInP light emitting diodes with an ITO current spreading layer

Thermal Characteristic of High Beam Quality Laser Diode Array

Improved light extraction of wafer-bonded AlGaInP LEDs by surface roughening

Investigation of high extraction efficiency flip-chip GaN-based light-emitting diodes

GaN-based light-emitting diodes with SiONx on sidewalls

Absorption of photons in the thin film AlGaInP light emitting diode

Interrupted Mg doping of GaN with MOCVD for improved p-type layers

AlGaInP LEDs with surface anti-reflecting structure

Improved light extraction in AlGaInP-based LEDs using a self-assembly metal nanomask

Steady-state thermal analysis of multi-active zone tunnel regeneration semiconductor laser

Study on the Small Signal Modulation Characteristic of Internal-Contact Oxide-Confined Vertical-Cavity Surface-Emitting Lasers

ZnSe by electron-beam evaporation used for facet passivation of high power laser diodes

Thermal Property of High Power 980 nm InGaAs/InGaAsP/InGaP Laser Diodes

Epitaxy and Characteristics of Resonant Cavity LEDs at 650 nm

Suchergebnisse filtern