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Multiple Nanostructures on Full Surface of GZO/GaN-Based LED to Enhance Light-Extraction Efficiency Using a Solution-Based Method

IEEE journal of quantum electronics, 2014-08, Vol.50 (8), p.629-632

Shei, Shih-Chang

2014

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IEEE_Xplore

GaN-Based Power Flip-Chip LEDs With SILAR and Hydrothermal ZnO Nanorods

IEEE journal of selected topics in quantum electronics, 2015-07, Vol.21 (4), p.431-435

2015

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IEEE_Xplore

Synthesis of CuInS2 quantum dots using polyetheramine as solvent

Nanoscale research letters, 2015-03, Vol.10 (1), p.122-122, Article 122

2015

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White-Light Emission From GaN-Based TJ LEDs Coated With Red Phosphor

IEEE electron device letters, 2016-09, Vol.37 (9), p.1150-1153

2016

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IEEE_Xplore

GaN-Based White LEDs With CIS/ZnS Quantum Dots Synthesized Using Polyetheramine as Solvent

IEEE journal of quantum electronics, 2015-03, Vol.51 (3), p.1-6

2015

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IEEE_Xplore

Design and Fabrication of a TiO2/SiO2 Dielectric Broadband and Wide-Angle Reflector and Its Application to GaN-Based Blue LEDs

IEEE journal of quantum electronics, 2015-07, Vol.51 (7), p.1-5

2015

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IEEE_Xplore

Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition

Journal of applied physics, 2014-09, Vol.116 (9)

2014

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Effect of Solvent Chelating on Crystal Growth Mechanism of CZTSe Nanoink in Polyetheramine

IEEE transactions on nanotechnology, 2015-09, Vol.14 (5), p.896-903

2015

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IEEE_Xplore

AlGaInP-Based LEDs With AuBe-Diffused AZO/GaP Current Spreading Layer

IEEE journal of quantum electronics, 2013-10, Vol.49 (10), p.846-851

2013

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IEEE_Xplore

Electromigration-induced degradation around electrode of GaN light-emitting diode in water vapour

Electronics letters, 2014-01, Vol.50 (2), p.108-109

2014

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Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs With Internal Inverse-Parallel Protection Diodes

IEEE electron device letters, 2007-05, Vol.28 (5), p.346-349

2007

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IEEE_Xplore

Thermodynamics and kinetics insight into reaction mechanism of Cu2ZnSnSe4 nanoink based on binary metal-amine complexes in polyetheramine-synthesized process

Journal of alloys and compounds, 2016-08, Vol.676, p.54-63

2016

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Novel solution process for synthesis of CIGS nanoparticles using polyetheramine as solvent

Materials letters, 2014-05, Vol.122, p.52-54

2014

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GaN-Based LEDs With GaN [Formula Omitted]-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

IEEE photonics technology letters, 2009-11, Vol.21 (22), p.1659

2009

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Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction

Applied surface science, 2012-08, Vol.258 (20), p.8109-8116

2012

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III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.140-144

2010

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IEEE_Xplore

GaN-Based LEDs With GaN \mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

IEEE photonics technology letters, 2009-11, Vol.21 (22), p.1659-1661

2009

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IEEE_Xplore

SiNx Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency by a Successive Ionic Layer Adsorption and Reaction Method

Journal of lightwave technology, 2013-07, Vol.31 (13-16), p.2413-2418

2013

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A novel synthesis of Cu2SnSe3 nanoink prepared via elemental sources and isophorondiamine chelation

Materials letters, 2013-07, Vol.102-103, p.120-122

2013

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Highly Transparent Nano-Needle ZnO Prepared by Successive Ionic Layer Adsorption and Reaction Method

Integrated ferroelectrics, 2013-01, Vol.143 (1), p.87-96

Shei, Shih-Chang

2013

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The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads

Japanese Journal of Applied Physics, 2009-10, Vol.48 (10), p.102103

2009

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GaN-Based LEDs With Contact-Transferred and Mask-Embedded Lithography and In-Situ N Treatments

Journal of lightwave technology, 2012-10, Vol.30 (20), p.3241-3246

2012

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IEEE_Xplore

Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes

Japanese Journal of Applied Physics, 2006-04, Vol.45 (4R), p.2463

2006

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Synthesis of CZTSe Nanocrystal Prepared by a Facile Route in Coordinating Solvent From Elemental Sources

IEEE transactions on nanotechnology, 2013-07, Vol.12 (4), p.532-538

2013

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IEEE_Xplore

Optical and Structural Properties of Titanium Dioxide Films from and Starting Materials Annealed at Various Temperatures

Advances in materials science and engineering, 2013, Vol.2013, p.1-7

Shei, Shih-Chang

2013

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Multiple Nanostructures on Full Surface of GZO/GaN-Based LED to Enhance Light-Extraction Efficiency Using a Solution-Based Method

GaN-Based Power Flip-Chip LEDs With SILAR and Hydrothermal ZnO Nanorods

Synthesis of CuInS2 quantum dots using polyetheramine as solvent

White-Light Emission From GaN-Based TJ LEDs Coated With Red Phosphor

GaN-Based White LEDs With CIS/ZnS Quantum Dots Synthesized Using Polyetheramine as Solvent

Design and Fabrication of a TiO2/SiO2 Dielectric Broadband and Wide-Angle Reflector and Its Application to GaN-Based Blue LEDs

Electrical, optical, and material characterizations of blue InGaN light emitting diodes submitted to reverse-bias stress in water vapor condition

Effect of Solvent Chelating on Crystal Growth Mechanism of CZTSe Nanoink in Polyetheramine

AlGaInP-Based LEDs With AuBe-Diffused AZO/GaP Current Spreading Layer

Electromigration-induced degradation around electrode of GaN light-emitting diode in water vapour

Improved Reliability and ESD Characteristics of Flip-Chip GaN-Based LEDs With Internal Inverse-Parallel Protection Diodes

Thermodynamics and kinetics insight into reaction mechanism of Cu2ZnSnSe4 nanoink based on binary metal-amine complexes in polyetheramine-synthesized process

Novel solution process for synthesis of CIGS nanoparticles using polyetheramine as solvent

GaN-Based LEDs With GaN [Formula Omitted]-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

Effect of temperature on the deposition of ZnO thin films by successive ionic layer adsorption and reaction

III-Nitride-Based Light-Emitting Diodes With GaN Micropillars Around Mesa and Patterned Substrate

GaN-Based LEDs With GaN \mu-Pillars Around Mesa, Patterned Substrate, and Reflector Under Pads

SiNx Nanopillars on GaN-Based LED to Enhance Light-Extraction Efficiency by a Successive Ionic Layer Adsorption and Reaction Method

A novel synthesis of Cu2SnSe3 nanoink prepared via elemental sources and isophorondiamine chelation

Highly Transparent Nano-Needle ZnO Prepared by Successive Ionic Layer Adsorption and Reaction Method

The Output Power Enhancements of GaN-Based Blue Light-Emitting Diodes with Highly Reflective Ag/Cr/Au Trilayer Omnidirectional Reflective Electrode Pads

GaN-Based LEDs With Contact-Transferred and Mask-Embedded Lithography and In-Situ N Treatments

Emission Mechanism of Mixed-Color InGaN/GaN Multi-Quantum-Well Light-Emitting Diodes

Synthesis of CZTSe Nanocrystal Prepared by a Facile Route in Coordinating Solvent From Elemental Sources

Optical and Structural Properties of Titanium Dioxide Films from and Starting Materials Annealed at Various Temperatures

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