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Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM

Journal of crystal growth, 2020-01, Vol.529, p.125273, Article 125273

2020

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Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution

Applied surface science, 2004-08, Vol.235 (3), p.249-259

2004

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Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

Journal of crystal growth, 2024-12, Vol.647, p.127873, Article 127873

2024

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Sn-mediated transformations on Si(111) surface: Reconstructions, Electromigration, Homoepitaxy

Surface science, 2024-03, Vol.741, p.122418, Article 122418

2024

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High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy

Journal of crystal growth, 2024-02, Vol.628, p.127545, Article 127545

2024

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Structural transitions on Si(111) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

Applied surface science, 2023-01, Vol.609, p.155367, Article 155367

2023

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2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures

Journal of crystal growth, 2020-02, Vol.531, p.125347, Article 125347

2020

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Near-field infrared spectroscopy of SiOx nanowires

Applied surface science, 2022-05, Vol.584, p.152583, Article 152583

2022

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Low-defect-density SnSe2 films nucleated via thin layer crystallization

Journal of crystal growth, 2024-04, Vol.631, p.127615, Article 127615

2024

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Abnormal diffusion profile of adatoms on extremely wide terraces of the Si(111) surface

Nauchno-tekhnicheskiĭ vestnik informat͡s︡ionnykh tekhnologiĭ, mekhaniki i optiki, 2021-10, Vol.21 (5), p.686-693

2021

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VAN-DER-WAALS HETEROEPITAXY OF LAYERED SNSE2 ON SI(111) AND BI2SE3(0001) SURFACES

Avtometrija (Novosibirsk), 2022, Vol.58 (6), p.21-27

2022

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Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

Applied surface science, 2017-06, Vol.406, p.307-311

2017

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Growth and structural properties of α-MoO3 (010) microplates with atomically flat surface

Materials science & engineering. B, Solid-state materials for advanced technology, 2010-10, Vol.174 (1-3), p.159-163

2010

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Indium nanowires at the silicon surface

Semiconductors (Woodbury, N.Y.), 2016-07, Vol.50 (7), p.901-903

2016

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Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

Semiconductors (Woodbury, N.Y.), 2017-04, Vol.51 (4), p.420-422

2017

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Local Anodic Oxidation of Thin GeO Films and Formation of Nanostructures Based on Them

Physics of the solid state, 2018-04, Vol.60 (4), p.700-704

2018

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Growth and structural properties of α-MoO 3 (0 1 0) microplates with atomically flat surface

Materials science & engineering. B, Solid-state materials for advanced technology, 2010, Vol.174 (1), p.159-163

2010

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The deepness enhancing of an AFM-tip induced surface nanomodification

Applied surface science, 2005-04, Vol.243 (1), p.138-142

2005

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Study of the morphology and optical properties of anodic oxide layers on InAs (111)III

Semiconductors (Woodbury, N.Y.), 2013-04, Vol.47 (4), p.555-560

2013

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Nanofaceting of LiNbO3 X-cut surface by high temperature annealing and titanium diffusion

Optics communications, 2003-06, Vol.221 (4-6), p.359-363

2003

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Nanofaceting of LiNbO 3X-cut surface by high temperature annealing and titanium diffusion

Optics communications, 2003, Vol.221 (4), p.359-363

2003

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6 - Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

Advances in Semiconductor Nanostructures, 2017, p.131-155

2017

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Synthesis of diamond crystals from oxygen-acetylene flames on a metal substrate at low temperature

Carbon (New York), 1998, Vol.36 (5), p.581-585

1998

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8 - Atomic Processes on the Silicon Surface

Advances in Semiconductor Nanostructures, 2017, p.189-221

2017

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10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

Advances in Semiconductor Nanostructures, 2017, p.255-277

2017

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Etching of step-bunched Si(1 1 1) surface by Se molecular beam observed by in situ REM

Surface passivation and morphology of GaAs(1 0 0) treated in HCl-isopropanol solution

Capture zone scaling in 2D Ge island nucleation on Si(111)-(7 × 7) at elevated temperatures

Sn-mediated transformations on Si(111) surface: Reconstructions, Electromigration, Homoepitaxy

High-temperature indium adsorption on Bi2Se3(0001) surface studied by in situ reflection electron microscopy

Structural transitions on Si(111) surface during Sn adsorption, electromigration, and desorption studied by in situ UHV REM

2D island nucleation controlled by nanocluster diffusion during Si and Ge epitaxy on Si(1 1 1)-(7 × 7) surface at elevated temperatures

Near-field infrared spectroscopy of SiOx nanowires

Low-defect-density SnSe2 films nucleated via thin layer crystallization

Abnormal diffusion profile of adatoms on extremely wide terraces of the Si(111) surface

VAN-DER-WAALS HETEROEPITAXY OF LAYERED SNSE2 ON SI(111) AND BI2SE3(0001) SURFACES

Local monitoring of atomic steps on GaAs(001) surface under oxidation, wet removal of oxides and thermal smoothing

Growth and structural properties of α-MoO3 (010) microplates with atomically flat surface

Indium nanowires at the silicon surface

Reversible electrochemical modification of the surface of a semiconductor by an atomic-force microscope probe

Local Anodic Oxidation of Thin GeO Films and Formation of Nanostructures Based on Them

Growth and structural properties of α-MoO 3 (0 1 0) microplates with atomically flat surface

The deepness enhancing of an AFM-tip induced surface nanomodification

Study of the morphology and optical properties of anodic oxide layers on InAs (111)III

Nanofaceting of LiNbO3 X-cut surface by high temperature annealing and titanium diffusion

Nanofaceting of LiNbO 3X-cut surface by high temperature annealing and titanium diffusion

6 - Modeling of Quantum Transport and Single-Electron Charging in GaAs/AlGaAs-Nanostructures

Synthesis of diamond crystals from oxygen-acetylene flames on a metal substrate at low temperature

8 - Atomic Processes on the Silicon Surface

10 - Formation of GaAs Step-Terraced Surfaces by Annealing in Equilibrium Conditions

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