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B11-O-05Role of defect as a diffusion barrier for carriers in InGaN/GaN quantum wells

Microscopy, 2015-11, Vol.64 (suppl 1), p.i12.2-i12

2015

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College Students’ Coaching Competency: Scale Development and Validation

Journal of Korean Coaching Research, 2021-10, Vol.14 (5), p.53-76

2021

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The Correlation between the Microstructure and the Characteristic Luminescence in the High Crystalline α-Ga 2 O 3 Grown on the Thin-Wall Single Crystal Al 2 O 3

Meeting abstracts (Electrochemical Society), 2023-12, Vol.MA2023-02 (35), p.1699-1699

2023

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Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN Multi-Quantum Wells

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (13), p.1946

2023

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Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar InGaN/GaN Multi-Quantum Wells

Nanomaterials (Basel, Switzerland), 2023-06, Vol.13 (13), p.1946

2023

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Direct Observation of Bandgap Shift in the Dislocations Using High Resolution Cathodoluminescence in Transmission Electron Microscopy

Meeting abstracts (Electrochemical Society), 2014-08, Vol.MA2014-02 (40), p.1982-1982

2014

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Enhancement of deuterium retention in damaged tungsten by plasma-induced defect clustering

Nuclear fusion, 2017-12, Vol.57 (12), p.126042

2017

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The impact of atomic layer deposited SiO 2 passivation for high-k Ta 1−x Zr x O on the InP substrate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015, Vol.3 (39), p.10293-10301

2015

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The impact of atomic layer deposited SiO sub(2) passivation for high-kTa sub(1-x)Zr sub(x)O on the InP substrate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (39), p.10293-10301

2015

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The impact of atomic layer deposited SiO2 passivation for high-k Ta1−xZrxO on the InP substrateElectronic supplementary information (ESI) available. See DOI: 10.1039/c5tc01890k

2015-10

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Interface characteristics of spin-on-dielectric SiOx-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Thin solid films, 2015-08, Vol.589, p.838-843

2015

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Investigation on Polarization Induced Electro-Optical Property of GaN LED Using TEM-EBIC Combined with Cathodoluminescenc

Meeting abstracts (Electrochemical Society), 2014-08, Vol.MA2014-02 (40), p.1991-1991

2014

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Luminescence properties related anti-phase domain of alpha-Ga2O3

APL materials, 2023-05, Vol.11 (5), p.051113-051113-8

2023

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Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar ( 11 2 ¯ 2 ) substrate using cathodoluminescence in transmission electron microscopy

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2024-03, Vol.42 (2)

2024

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Origin of extra diffraction spots for high crystalline alpha-Ga2O3

AIP advances, 2023-02, Vol.13 (2), p.025148-025148-6

2023

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V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells

Journal of electronic materials, 2015-11, Vol.44 (11), p.4134-4138

2015

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B11-O-05Role of defect as a diffusion barrier for carriers in InGaN/GaN quantum wells

College Students’ Coaching Competency: Scale Development and Validation

The Correlation between the Microstructure and the Characteristic Luminescence in the High Crystalline α-Ga 2 O 3 Grown on the Thin-Wall Single Crystal Al 2 O 3

Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar 112¯2 InGaN/GaN Multi-Quantum Wells

Correlation between the Surface Undulation and Luminescence Characteristics in Semi-Polar InGaN/GaN Multi-Quantum Wells

Direct Observation of Bandgap Shift in the Dislocations Using High Resolution Cathodoluminescence in Transmission Electron Microscopy

Enhancement of deuterium retention in damaged tungsten by plasma-induced defect clustering

The impact of atomic layer deposited SiO 2 passivation for high-k Ta 1−x Zr x O on the InP substrate

The impact of atomic layer deposited SiO sub(2) passivation for high-kTa sub(1-x)Zr sub(x)O on the InP substrate

The impact of atomic layer deposited SiO2 passivation for high-k Ta1−xZrxO on the InP substrateElectronic supplementary information (ESI) available. See DOI: 10.1039/c5tc01890k

Interface characteristics of spin-on-dielectric SiOx-buffered passivation layers for AlGaN/GaN high electron mobility transistors

Investigation on Polarization Induced Electro-Optical Property of GaN LED Using TEM-EBIC Combined with Cathodoluminescenc

Luminescence properties related anti-phase domain of alpha-Ga2O3

Observation of structural defects in GaN/InGaN multi-quantum wells grown on semipolar ( 11 2 ¯ 2 ) substrate using cathodoluminescence in transmission electron microscopy

Origin of extra diffraction spots for high crystalline alpha-Ga2O3

V-pits as Barriers to Diffusion of Carriers in InGaN/GaN Quantum Wells

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