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Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity

Nature, 2004-11, Vol.432 (7014), p.200-203

2004

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High performance thin-film flip-chip InGaN-GaN light-emitting diodes

Applied physics letters, 2006-08, Vol.89 (7), p.071109-071109-3

2006

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Scanning a photonic crystal slab nanocavity by condensation of xenon

Applied physics letters, 2005-10, Vol.87 (14), p.141105-141105-3

2005

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The role of p -type doping and the density of states on the modulation response of quantum dot lasers

Applied physics letters, 2002-04, Vol.80 (15), p.2758-2760

2002

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Quantum dot photonic crystal lasers

Electronics letters, 2002-08, Vol.38 (17), p.967-968

2002

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Ultrafast electron capture into p-modulation-doped quantum dots

Applied physics letters, 2004-11, Vol.85 (20), p.4570-4572

2004

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Quantum dot photonic-crystal-slab nanocavities : Quality factors and lasing

Physical review. B, Condensed matter and materials physics, 2005-11, Vol.72 (19), p.193303.1-193303.4, Article 193303

2005

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Electron and hole spin dynamics in semiconductor quantum dots

Applied physics letters, 2005-03, Vol.86 (11), p.113111-113111-3

2005

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Temperature dependence of gain saturation in multilevel quantum dot lasers

IEEE journal of quantum electronics, 2000-09, Vol.36 (9), p.1065-1071

2000

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Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers

IEEE journal of quantum electronics, 1999-08, Vol.35 (8), p.1238-1246

1999

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Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

IEEE photonics technology letters, 1999-03, Vol.11 (3), p.301-303

1999

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IEEE_Xplore

Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed

IEEE journal of quantum electronics, 2002-12, Vol.38 (12), p.1587-1593

2002

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IEEE_Xplore

1.3 μm room-temperature GaAs-based quantum-dot laser

Applied physics letters, 1998-11, Vol.73 (18), p.2564-2566

1998

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Low-threshold oxide-confined 1.3-μm quantum-dot laser

IEEE photonics technology letters, 2000-03, Vol.12 (3), p.230-232

2000

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IEEE_Xplore

Continuous-wave low-threshold performance of 1.3- mu m InGaAs-GaAs quantum-dot lasers

IEEE journal of selected topics in quantum electronics, 2000, Vol.6 (3)

2000

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InAs quantum-dot lasers operating near 1.3 mu m with high characteristic temperature for continuous-wave operation

Electronics letters, 2000-09, Vol.36 (20), p.1703-1704

2000

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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Journal of display technology, 2007-06, Vol.3 (2), p.160-175

2007

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IEEE_Xplore

Time-resolved Faraday rotation measurements of spin relaxation in InGaAs∕GaAs quantum dots: Role of excess energy

Applied physics letters, 2007-04, Vol.90 (15)

2007

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Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states

Applied physics letters, 2007-01, Vol.90 (5), p.053109-053109-3

2007

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Low-threshold high-T0 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region

IEEE photonics technology letters, 2002-09, Vol.14 (9), p.1231-1233

2002

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IEEE_Xplore

InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature

Electronics letters, 2000-07, Vol.36 (15), p.1283-1284

2000

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Threshold temperature dependence of lateral-cavity quantum-dot lasers

IEEE photonics technology letters, 1998-12, Vol.10 (12), p.1673-1675

1998

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IEEE_Xplore

Efficient electron spin detection with positively charged quantum dots

Applied physics letters, 2004-04, Vol.84 (15), p.2793-2795

2004

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Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels

Applied physics letters, 1998-12, Vol.73 (23), p.3351-3353

1998

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Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture

IEEE photonics technology letters, 1998-08, Vol.10 (8), p.1064-1066

1998

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IEEE_Xplore

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Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity

High performance thin-film flip-chip InGaN-GaN light-emitting diodes

Scanning a photonic crystal slab nanocavity by condensation of xenon

The role of p -type doping and the density of states on the modulation response of quantum dot lasers

Quantum dot photonic crystal lasers

Ultrafast electron capture into p-modulation-doped quantum dots

Quantum dot photonic-crystal-slab nanocavities : Quality factors and lasing

Electron and hole spin dynamics in semiconductor quantum dots

Temperature dependence of gain saturation in multilevel quantum dot lasers

Spontaneous emission and threshold characteristics of 1.3-μm InGaAs-GaAs quantum-dot GaAs-based lasers

Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers

Modulation characteristics of quantum-dot lasers: the influence of p-type doping and the electronic density of states on obtaining high speed

1.3 μm room-temperature GaAs-based quantum-dot laser

Low-threshold oxide-confined 1.3-μm quantum-dot laser

Continuous-wave low-threshold performance of 1.3- mu m InGaAs-GaAs quantum-dot lasers

InAs quantum-dot lasers operating near 1.3 mu m with high characteristic temperature for continuous-wave operation

Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

Time-resolved Faraday rotation measurements of spin relaxation in InGaAs∕GaAs quantum dots: Role of excess energy

Hole spin relaxation in neutral InGaAs quantum dots: Decay to dark states

Low-threshold high-T0 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region

InGaAs quantum dot lasers with sub-milliamp thresholds and ultra-low threshold current density below room temperature

Threshold temperature dependence of lateral-cavity quantum-dot lasers

Efficient electron spin detection with positively charged quantum dots

Lasing from InGaAs/GaAs quantum dots with extended wavelength and well-defined harmonic-oscillator energy levels

Single-mode operation in an antiguided vertical-cavity surface-emitting laser using a low-temperature grown AlGaAs dielectric aperture

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