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Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1056-1058

2020

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Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

Semiconductors (Woodbury, N.Y.), 2019-10, Vol.53 (10), p.1279-1281

2019

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Microwave detector diodes based on InGaAs/AlGaAs/GaAs heterostructures

Journal of applied physics, 2020-01, Vol.127 (4)

2020

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Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor

Thin solid films, 2014-07, Vol.562, p.114-117

2014

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Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2507-2510

2011

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Low-barrier Mott diodes with near-surface polarization-induced δ-doping

Applied physics letters, 2020-01, Vol.116 (1)

2020

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Experimental Studies of the Frequency Dependence of the Low-Barrier Mott Diode Impedance

IEEE transactions on electron devices, 2017-01, Vol.64 (1), p.109-114

2017

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Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

Journal of applied physics, 2015-11, Vol.118 (20)

2015

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Study of Electrophysical Characteristics of pHEMT Heterostructures by the Methods of Impedance Spectroscopy

IEEE transactions on electron devices, 2018-04, Vol.65 (4), p.1327-1332

2018

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Near-field microwave tomography of planar semiconductor microstructures

Journal of applied physics, 2017-12, Vol.122 (24)

2017

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Analytical solution for the potential distribution in a stripe Schottky contact

Journal of applied physics, 2014-06, Vol.115 (24)

2014

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Microwave Volt–Impedance Spectroscopy of Semiconductors

Technical physics, 2020-11, Vol.65 (11), p.1859-1865

2020

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Analysis of diodes with a relatively low barrier in the microwave planar mixer

Journal of communications technology & electronics, 2011-08, Vol.56 (8), p.1013-1016

2011

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The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond

Technical physics letters, 2020-06, Vol.46 (6), p.551-555

2020

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On the Impact of Interaction Between the Matrix Elements in the 3-mm Wave Active Radiovision System on the Object Image Structure

Radiophysics and quantum electronics, 2014, Vol.56 (8-9), p.610-619

2014

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Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1203-1206

2019

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Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1473-1476

2018

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Study of the Structural and Morphological Properties of HPHT Diamond Substrates

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1432-1436

2018

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Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films

Semiconductors (Woodbury, N.Y.), 2020, Vol.54 (9), p.1047-1050

2020

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Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers

Technical physics, 2019-12, Vol.64 (12), p.1827-1836

2019

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Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

Surface and interface analysis, 2017-02, Vol.49 (2), p.117-121

2017

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Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1485-1489

2017

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Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges

Technical physics, 2017-05, Vol.62 (5), p.765-772

2017

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Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1439-1442

2016

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Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1569-1573

2016

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Formation of Ohmic Contacts to a Diamond-Like Carbon Layer Deposited on a Dielectric Diamond Substrate

Vertical Field-Effect Transistor with a Controlling GaAs-Based p–n Junction

Microwave detector diodes based on InGaAs/AlGaAs/GaAs heterostructures

Deposition of microcrystalline silicon in electron-cyclotron resonance discharge (24GHz) plasma from silicon tetrafluoride precursor

Simulation of the Electron Transport in a Mott Diode by the Monte Carlo Method

Low-barrier Mott diodes with near-surface polarization-induced δ-doping

Experimental Studies of the Frequency Dependence of the Low-Barrier Mott Diode Impedance

Terahertz signal detection in a short gate length field-effect transistor with a two-dimensional electron gas

Study of Electrophysical Characteristics of pHEMT Heterostructures by the Methods of Impedance Spectroscopy

Near-field microwave tomography of planar semiconductor microstructures

Analytical solution for the potential distribution in a stripe Schottky contact

Microwave Volt–Impedance Spectroscopy of Semiconductors

Analysis of diodes with a relatively low barrier in the microwave planar mixer

The Use of Pulsed Laser Annealing to Form Ohmic Mo/Ti Contacts to Diamond

On the Impact of Interaction Between the Matrix Elements in the 3-mm Wave Active Radiovision System on the Object Image Structure

Plasma-Chemical Deposition of Diamond-Like Films onto the Surface of Heavily Doped Single-Crystal Diamond

Plasma Chemical Etching of Gallium Arsenide in C2F5Cl-Based Inductively Coupled Plasma

Study of the Structural and Morphological Properties of HPHT Diamond Substrates

Modification of the Ratio between sp2- to sp3-Hybridized Carbon Components in PECVD Diamond-Like Films

Formation of Low-Resistivity Au/Mo/Ti Ohmic Contacts to p-Diamond Epitaxial Layers

Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer‐thin layers

Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy

Influence of the channel–gate barrier height on the detection properties of a field-effect transistor in the microwave and terahertz ranges

Heavily doped GaAs:Te layers grown by MOVPE using diisopropyl telluride as a source

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

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