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Emitter-Induced Gain Effects on Dual-Emitter Phototransistor as an Electrooptical Switch

IEEE transactions on electron devices, 2007-09, Vol.54 (9), p.2411-2417

2007

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Comprehensive investigation on planar type of Pd–GaN hydrogen sensors

International journal of hydrogen energy, 2009-07, Vol.34 (13), p.5604-5615

2009

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Semiempirical method of suppressing interference effects in photoluminescence spectra of GaN heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-03, Vol.32 (2)

2014

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Comprehensive study of Pd/GaN metal–semiconductor–metal hydrogen sensors with symmetrically bi-directional sensing performance

Sensors and actuators. B, Chemical, 2009-05, Vol.138 (2), p.422-427

2009

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Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch

Japanese Journal of Applied Physics, 2007-12, Vol.46 (12R), p.7705

2007

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Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure

Sensors and actuators. B, Chemical, 2009-09, Vol.141 (2), p.532-537

2009

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High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles

IEEE electron device letters, 2008-12, Vol.29 (12), p.1328-1331

2008

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High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2

Semiconductor science and technology, 2009-04, Vol.24 (4), p.045007-045007 (4)

2009

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Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaP-GaAs Heterojunction Bipolar Transistor

IEEE electron device letters, 2009-09, Vol.30 (9), p.898-900

2009

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Investigation on electro-optical switch using heterojunction phototransistors with double emitter

2008 Conference on Optoelectronic and Microelectronic Materials and Devices, 2008, p.75-77

2008

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High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor

Semiconductors (Woodbury, N.Y.), 2009-07, Vol.43 (7), p.939-942

2009

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Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment

Journal of the Electrochemical Society, 2007, Vol.154 (7), p.H552

2007

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Investigation of field-plate gate on heterojunction doped-channel field effect transistors

2008 Conference on Optoelectronic and Microelectronic Materials and Devices, 2008, p.105-107

2008

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High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and \hbox Forming Three-Dimensional Dipoles

IEEE electron device letters, 2008-12, Vol.29 (12), p.1328-1331

2008

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GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration

Japanese Journal of Applied Physics, 2009-04, Vol.48 (4R), p.41002

2009

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Design the GaN junction barrier schottky diodes with array p-type pillar

2016 5th International Symposium on Next-Generation Electronics (ISNE), 2016, p.1-2

2016

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Modeling the effect of acceptor-type traps on internal electric field of a GaN-pin device phenomenon

2015 IEEE 11th International Conference on Power Electronics and Drive Systems, 2015, p.589-591

2015

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Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

Semiconductor science and technology, 2006-08, Vol.21 (8), p.1132-1138

2006

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InGaP∕InGaAs∕GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor

Electronics letters, 2003-11, Vol.39 (22), p.1611

2003

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A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches

Materials chemistry and physics, 2004-10, Vol.87 (2), p.435-438

2004

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Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application

Solid-state electronics, 2005-03, Vol.49 (3), p.357-361

2005

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Comparison of Tuning Performance Characteristics of Dual-Emitter Phototransistor with Biased Emitter and Heterojunction Phototransistor with Biased Base

Japanese Journal of Applied Physics, 2006-06, Vol.45 (6R), p.4908

2006

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Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch

Semiconductor science and technology, 2005-02, Vol.20 (2), p.152-157

2005

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Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors (DH-HEMTs)

Advanced materials research, 2008-06, Vol.47-50, p.419-422

2008

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InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

Advanced materials research, 2008, Vol.47-50, p.383-386

2008

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Emitter-Induced Gain Effects on Dual-Emitter Phototransistor as an Electrooptical Switch

Comprehensive investigation on planar type of Pd–GaN hydrogen sensors

Semiempirical method of suppressing interference effects in photoluminescence spectra of GaN heterostructures

Comprehensive study of Pd/GaN metal–semiconductor–metal hydrogen sensors with symmetrically bi-directional sensing performance

Dynamic Performance of Dual-Emitter Phototransistor as Electro-Optical Switch

Hydrogen sensors with double dipole layers using a Pd-mixture-Pd triple-layer sensing structure

High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and SiO2 Forming Three-Dimensional Dipoles

High sensing response Pd/GaN hydrogen sensors with a porous-like mixture of Pd and SiO2

Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaP-GaAs Heterojunction Bipolar Transistor

Investigation on electro-optical switch using heterojunction phototransistors with double emitter

High-performance InGaP/GaAs pnp δ-doped heterojunction bipolar transistor

Promoted Potential of Heterojunction Phototransistor for Low-Power Photodetection by Surface Sulfur Treatment

Investigation of field-plate gate on heterojunction doped-channel field effect transistors

High-Sensitivity Metal-Semiconductor-Metal Hydrogen Sensors With a Mixture of Pd and \hbox Forming Three-Dimensional Dipoles

GaN Sensors with Metal–Oxide Mixture for Sensing Hydrogen-Containing Gases of Ultralow Concentration

Design the GaN junction barrier schottky diodes with array p-type pillar

Modeling the effect of acceptor-type traps on internal electric field of a GaN-pin device phenomenon

Application of double camel-like gate structures for a GaAs field-effect transistor with extremely high potential barrier height and gate turn-on voltage

InGaP∕InGaAs∕GaAs camel-gate p-channel pseudomorphic modulation-doped field effect transistor

A functional InGaP/GaAs double heterostructure-emitter bipolar transistor with multiple negative-differential-resistance switches

Multiple negative-differential-resistance switches based on an InGaP/GaAs/InGaAs step-compositional-emitter bipolar transistor for multiple-valued logic application

Comparison of Tuning Performance Characteristics of Dual-Emitter Phototransistor with Biased Emitter and Heterojunction Phototransistor with Biased Base

Application of InGaP/GaAs/InGaAs step-compositional-emitter structures for multiple-route switch

Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors (DH-HEMTs)

InGaP/GaAs pnp Heterojunction Bipolar Transistor with δ-Doped Sheet between Base-Emitter Junction

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