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Current and Future Challenges in Radiation Effects on CMOS Electronics

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1747-1763

2010

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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

IEEE transactions on nuclear science, 2017-01, Vol.64 (1), p.285-292

2017

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Radiation Effects on Ytterbium- and Ytterbium/Erbium-Doped Double-Clad Optical Fibers

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3293-3299

2009

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Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2842-2853

2008

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Radiation effects in SOI technologies

IEEE transactions on nuclear science, 2003-06, Vol.50 (3), p.522-538

2003

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Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.2074-2100

2013

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Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2426-2434

2007

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Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3172-3179

2009

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Proton-Induced Upsets in 41-nm NAND Floating Gate Cells

IEEE transactions on nuclear science, 2012-08, Vol.59 (4), p.838-844

2012

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Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3456-3462

2009

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Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2104-2113

2005

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Effects of particle energy on proton-induced single-event latchup

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2622-2629

2005

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Effects of oxide traps, interface traps, and border traps on metal-oxide-semiconductor devices

Journal of applied physics, 1993-05, Vol.73 (10), p.5058-5074

1993

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The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2440-2451

2015

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Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3499-3504

2009

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Effects of Angle of Incidence on Proton and Neutron-Induced Single-Event Latchup

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3122-3131

2006

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Total-dose radiation response of hafnium-silicate capacitors

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3191-3196

2002

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Worst-case bias during total dose irradiation of SOI transistors

IEEE transactions on nuclear science, 2000-12, Vol.47 (6), p.2183-2188

2000

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Production and propagation of single-event transients in high-speed digital logic ICs

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3278-3284

2004

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Challenges in hardening technologies using shallow-trench isolation

IEEE transactions on nuclear science, 1998-12, Vol.45 (6), p.2584-2592

1998

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Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.2904-2914

2014

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New Insights Into Single Event Transient Propagation in Chains of Inverters-Evidence for Propagation-Induced Pulse Broadening

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2338-2346

2007

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Comparison of charge yield in MOS devices for different radiation sources

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2656-2661

2002

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New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle

IEEE transactions on nuclear science, 2015-12, Vol.62 (6), p.2822-2829

2015

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Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2303-2311

2007

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Current and Future Challenges in Radiation Effects on CMOS Electronics

Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance

Radiation Effects on Ytterbium- and Ytterbium/Erbium-Doped Double-Clad Optical Fibers

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Radiation effects in SOI technologies

Radiation Hardness Assurance Testing of Microelectronic Devices and Integrated Circuits: Radiation Environments, Physical Mechanisms, and Foundations for Hardness Assurance

Proton- and Gamma-Induced Effects on Erbium-Doped Optical Fibers

Charge Generation by Secondary Particles From Nuclear Reactions in BEOL Materials

Proton-Induced Upsets in 41-nm NAND Floating Gate Cells

Development of a Radiation-Hardened Lateral Power MOSFET for POL Applications

Direct measurement of transient pulses induced by laser and heavy ion irradiation in deca-nanometer devices

Effects of particle energy on proton-induced single-event latchup

Effects of oxide traps, interface traps, and border traps on metal-oxide-semiconductor devices

The Contribution of Low-Energy Protons to the Total On-Orbit SEU Rate

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

Effects of Angle of Incidence on Proton and Neutron-Induced Single-Event Latchup

Total-dose radiation response of hafnium-silicate capacitors

Worst-case bias during total dose irradiation of SOI transistors

Production and propagation of single-event transients in high-speed digital logic ICs

Challenges in hardening technologies using shallow-trench isolation

Hardness Assurance for Proton Direct Ionization-Induced SEEs Using a High-Energy Proton Beam

New Insights Into Single Event Transient Propagation in Chains of Inverters-Evidence for Propagation-Induced Pulse Broadening

Comparison of charge yield in MOS devices for different radiation sources

New Insights Gained on Mechanisms of Low-Energy Proton-Induced SEUs by Minimizing Energy Straggle

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

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