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High mobility p-channel HFETs using strained Sb-based materials

Electronics letters, 2007, Vol.43 (15), p.834-835

2007

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Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Journal of crystal growth, 2005-07, Vol.281 (1), p.32-37

2005

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Special issue on wide bandgap semiconductor devices

Proceedings of the IEEE, 2002-06, Vol.90 (6), p.939-941

2002

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Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum Dot

Science (American Association for the Advancement of Science), 1996-07, Vol.273 (5271), p.87-90

1996

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Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers

Journal of crystal growth, 1997-05, Vol.175, p.888-893

1997

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Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.151-155

2003

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Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence

Applied physics letters, 2005-01, Vol.86 (5), p.52109

2005

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Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Applied physics letters, 2004-10, Vol.85 (17), p.3786-3788

2004

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Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Journal of crystal growth, 2003-04, Vol.251 (1), p.481-486

2003

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Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

Applied physics letters, 2006-01, Vol.88 (1), p.011916-011916-3

2006

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MBE growth of AlGaN∕GaN HEMTs with high power density

Electronics letters, 2002-12, Vol.38 (25), p.1740

2002

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Donors in hydride-vapor-phase epitaxial GaN

Journal of crystal growth, 2002-12, Vol.246 (3), p.307-314

2002

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Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

Materials science forum, 2006-10, Vol.527-529, p.493-496

2006

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Thermal Evolution of Defects in Semi-Insulating 4H SiC

Materials science forum, 2006-10, Vol.527-529, p.531-534, Article 531

2006

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Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC

Materials science forum, 2004-01, Vol.457-460, p.461-464

2004

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The structure of Sb-terminated GaAs(001) surfaces

Surface science, 1999-08, Vol.436 (1), p.L707-L714

1999

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Room temperature Hall mobilities above 1900 cm2∕V s in MBE-grown AlGaN∕GaN HEMT structures

Electronics letters, 2004, Vol.40 (19), p.1226

2004

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Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates

Materials science forum, 2006-10, Vol.527-529, p.613-616

2006

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Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures

Electronics letters, 1998-02, Vol.34 (3), p.270

1998

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Sb-based n- and p-channel HFETs for high-speed, low-power applications

2009 Device Research Conference, 2009, p.159-162

2009

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Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.39-48

2002

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Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions

Applied physics letters, 1985-05, Vol.46 (10), p.970-972

1985

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Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2 eV) recombination from Mg-doped GaN

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.58-62

1999

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Hybrid ferromagnet-semiconductor nonvolatile gate

IEEE transactions on magnetics, 1998-07, Vol.34 (4), p.1054-1059

1998

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A RHEED and STM study of Sb-rich AlSb and GaSb (0 0 1) surface reconstructions

Journal of crystal growth, 1997-05, Vol.175-176, p.317-322

1997

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High mobility p-channel HFETs using strained Sb-based materials

Homoepitaxial growth of GaN and AlGaN/GaN heterostructures by molecular beam epitaxy on freestanding HVPE gallium nitride for electronic device applications

Special issue on wide bandgap semiconductor devices

Homogeneous Linewidths in the Optical Spectrum of a Single Gallium Arsenide Quantum Dot

Stranski-Krastanov growth of InSb, GaSb, and AlSb on GaAs: structure of the wetting layers

Optical and magnetic resonance signatures of deep levels in semi-insulating 4H SiC

Estimation of residual nitrogen concentration in semi-insulating 4H-SiC via low temperature photoluminescence

Effect of Al∕N ratio during nucleation layer growth on Hall mobility and buffer leakage of molecular-beam epitaxy grown AlGaN∕GaN heterostructures

Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs

Effect of Al∕N flux ratio during nucleation layer growth on the microstructure of GaN films grown by molecular-beam epitaxy

MBE growth of AlGaN∕GaN HEMTs with high power density

Donors in hydride-vapor-phase epitaxial GaN

Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers

Thermal Evolution of Defects in Semi-Insulating 4H SiC

Optical and EPR Signatures of Intrinsic Defects in Ultra High Purity 4H-SiC

The structure of Sb-terminated GaAs(001) surfaces

Room temperature Hall mobilities above 1900 cm2∕V s in MBE-grown AlGaN∕GaN HEMT structures

Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates

Growth and characterisation of InAs/InGaSb/InAs/AlSb infrared laser structures

Sb-based n- and p-channel HFETs for high-speed, low-power applications

Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)

Photoreflectance characterization of interband transitions in GaAs/AlGaAs multiple quantum wells and modulation-doped heterojunctions

Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2 eV) recombination from Mg-doped GaN

Hybrid ferromagnet-semiconductor nonvolatile gate

A RHEED and STM study of Sb-rich AlSb and GaSb (0 0 1) surface reconstructions

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