UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 25

Sortiert nach

Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

Applied physics letters, 2006-03, Vol.88 (13), p.132111-132111-3

2006

Volltextzugriff (PDF)

Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

Applied physics letters, 2006-06, Vol.88 (24)

2006

Volltextzugriff (PDF)

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides : Sc2O3, Lu2O3, LaLuO3

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.2278-2281

2007

Volltextzugriff (PDF)

Strontium hafnate films deposited by physical vapor deposition

Thin solid films, 2006-12, Vol.515 (4), p.2527-2530

2006

Volltextzugriff (PDF)

Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals

Microelectronic engineering, 2008-12, Vol.85 (12), p.2382-2384

2008

Volltextzugriff (PDF)

Photoconductivity of Hf-based binary metal oxides

Microelectronic engineering, 2008-12, Vol.85 (12), p.2400-2402

2008

Volltextzugriff (PDF)

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Microelectronics and reliability, 2007-04, Vol.47 (4-5), p.518-520

2007

Volltextzugriff (PDF)

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Applied physics letters, 2007-06, Vol.90 (25)

2007

Volltextzugriff (PDF)

Amorphous lanthanum lutetium oxide thin films as an alternative high- κ gate dielectric

Applied physics letters, 2006-11, Vol.89 (22), p.222902-222902-3

2006

Volltextzugriff (PDF)

Electronic structure of the interface of aluminum nitride with Si(100)

Journal of applied physics, 2008-11, Vol.104 (9), p.093713-093713-4

2008

Volltextzugriff (PDF)

Internal photoemission of electrons at interfaces of metals with low-κ insulators

Applied physics letters, 2006-11, Vol.89 (20)

2006

Volltextzugriff (PDF)

Internal photoemission of electrons from Ta-based conductors into SiO2 and HfO2 insulators

Journal of applied physics, 2008-10, Vol.104 (7)

2008

Volltextzugriff (PDF)

Internal photoemission of electrons from Ta-based conductors into SiO 2 and HfO 2 insulators

Journal of applied physics, 2008-10, Vol.104 (7), p.073722-073722-7

2008

Volltextzugriff (PDF)

Photoconductivity of Hf-based binary metal oxide systems

Journal of applied physics, 2008-12, Vol.104 (11), p.114103-114103-6

2008

Volltextzugriff (PDF)

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Journal of applied physics, 2007-02, Vol.101 (3), p.34503

2007

Volltextzugriff (PDF)

Investigation of the electronic structure at interfaces of crystallineand amorphous Gd 2 O 3 thin layers with silicon substrates of different orientations

Applied physics letters, 2007-06, Vol.90 (25), p.252101-252101-3

2007

Volltextzugriff (PDF)

Electronic structure at interfaces of cubic Gd 2O 3 with embedded Si nanocrystals

Microelectronic engineering, 2008, Vol.85 (12), p.2382-2384

2008

Volltextzugriff (PDF)

Internal photoemission of electrons at interfaces of metalswith low- κ insulators

Applied physics letters, 2006-11, Vol.89 (20), p.202909-202909-3

2006

Volltextzugriff (PDF)

Ruthenium gate electrodes on Si O 2 and Hf O 2 : Sensitivity to hydrogenand oxygen ambients

Applied physics letters, 2006-06, Vol.88 (24), p.243514-243514-3

2006

Volltextzugriff (PDF)

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc 2O 3, Lu 2O 3, LaLuO 3

Microelectronic engineering, 2007, Vol.84 (9), p.2278-2281

2007

Volltextzugriff (PDF)

Flatband voltage shift of ruthenium gated stacks and its linkwith the formation of a thin ruthenium oxide layerat the ruthenium/dielectric interface

Journal of applied physics, 2007-02, Vol.101 (3), p.034503-034503-9

2007

Volltextzugriff (PDF)

Mechanism of O 2-anneal induced V fb shifts of Ru gated stacks

Microelectronics and reliability, 2007-04, Vol.47 (4), p.518-520

2007

Volltextzugriff (PDF)

Nitrogen implantation - An alternative technique to reduce traps at SiC/SiO(2)-interfaces

Materials science forum, 2006, Vol.527-529, p.991-994

2006

Volltextzugriff (PDF)

Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces

Materials science forum, 2006-10, Vol.527-529, p.991-994

2006

Volltextzugriff (PDF)

Second Generation High-k Gate Insulators

Advances in Science and Technology, 2006-10, Vol.45, p.1342-1350

2006

Volltextzugriff (PDF)

1 – 25 von 25

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(25)
Mit Volltextzugriff
(25)

Publikationsform

Artikel
(24)
Tagungsberichte
(1)

Sprache

Englisch
(20)
Japanisch
(1)

Erscheinungsjahr

n.n

Thema

Science & Technology
(14)
Physical Sciences
(13)
Physics
(13)
Physics, Applied
(13)
Exact Sciences And Technology
(5)
Technology
(5)
Applied Sciences
(4)
Bandgap Width
(4)
Electronics
(4)
Engineering
(3)
Engineering, Electrical & Electronic
(3)
Materials
(3)
Nanoscience & Nanotechnology
(3)
Science & Technology - Other Topics
(3)
Band Alignment
(2)
Band Offsets
(2)
Epitaxial Insulators
(2)
Insulator
(2)
Internal Photoemission
(2)
Materials Science
(2)

15 weitere anzeigen...

Weniger anzeigen...

Kollektion

Zeitschrift / Serie

2 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide insulators

Ruthenium gate electrodes on SiO2 and HfO2: Sensitivity to hydrogen and oxygen ambients

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides : Sc2O3, Lu2O3, LaLuO3

Strontium hafnate films deposited by physical vapor deposition

Electronic structure at interfaces of cubic Gd2O3 with embedded Si nanocrystals

Photoconductivity of Hf-based binary metal oxides

Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks

Investigation of the electronic structure at interfaces of crystalline and amorphous Gd2O3 thin layers with silicon substrates of different orientations

Amorphous lanthanum lutetium oxide thin films as an alternative high- κ gate dielectric

Electronic structure of the interface of aluminum nitride with Si(100)

Internal photoemission of electrons at interfaces of metals with low-κ insulators

Internal photoemission of electrons from Ta-based conductors into SiO2 and HfO2 insulators

Internal photoemission of electrons from Ta-based conductors into SiO 2 and HfO 2 insulators

Photoconductivity of Hf-based binary metal oxide systems

Flatband voltage shift of ruthenium gated stacks and its link with the formation of a thin ruthenium oxide layer at the ruthenium/dielectric interface

Investigation of the electronic structure at interfaces of crystallineand amorphous Gd 2 O 3 thin layers with silicon substrates of different orientations

Electronic structure at interfaces of cubic Gd 2O 3 with embedded Si nanocrystals

Internal photoemission of electrons at interfaces of metalswith low- κ insulators

Ruthenium gate electrodes on Si O 2 and Hf O 2 : Sensitivity to hydrogenand oxygen ambients

Electronic structure of silicon interfaces with amorphous and epitaxial insulating oxides: Sc 2O 3, Lu 2O 3, LaLuO 3

Flatband voltage shift of ruthenium gated stacks and its linkwith the formation of a thin ruthenium oxide layerat the ruthenium/dielectric interface

Mechanism of O 2-anneal induced V fb shifts of Ru gated stacks

Nitrogen implantation - An alternative technique to reduce traps at SiC/SiO(2)-interfaces

Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces

Second Generation High-k Gate Insulators

Suchergebnisse filtern