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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1352-1359

2020

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Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Semiconductors (Woodbury, N.Y.), 2017-12, Vol.51 (12), p.1542-1546

2017

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Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE

Applied physics letters, 2021-04, Vol.118 (15)

2021

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Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Semiconductor science and technology, 2019-02, Vol.34 (2), p.24003

2019

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Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structures

Journal of crystal growth, 2010-12, Vol.313 (1), p.12-15

2010

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Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Applied physics letters, 2016-08, Vol.109 (6)

2016

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Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.853-859

2020

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Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells

JETP letters, 2016-08, Vol.104 (3), p.163-168

2016

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Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain

JETP letters, 2018-03, Vol.107 (6), p.358-363

2018

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Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1630-1634

2016

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Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

Semiconductors (Woodbury, N.Y.), 2017-11, Vol.51 (11), p.1527-1530

2017

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On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (12), p.1547-1550

2018

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Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells

JETP letters, 2016-08, Vol.104 (4), p.231-235

2016

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Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1657-1661

2016

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Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1475-1478

2016

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Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Applied physics letters, 2012-10, Vol.101 (15)

2012

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Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1511-1514

2016

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Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation

Journal of Russian laser research, 2018, Vol.39 (1), p.83-89

2018

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Strain-Induced Intrinsic Splitting of the Biexciton Ground State in SiGe/Si Quantum Wells

Journal of Russian laser research, 2018, Vol.39 (1), p.90-94

2018

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Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.466-469

2005

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Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

Journal of physics. D, Applied physics, 2022-02, Vol.55 (7), p.75107

2022

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Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Thin solid films, 2008-11, Vol.517 (1), p.398-400

2008

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Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Thin solid films, 2008-11, Vol.517 (1), p.385-387

2008

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Radiation hardness of GeSi heterostructures with thin Ge layers

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-02, Vol.147 (2), p.191-194

2008

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Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Materials science in semiconductor processing, 2018-03, Vol.75, p.143-148

2018

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Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Near-infrared stimulated emission from indium-rich InGaN layers grown by plasma-assisted MBE

Light emission from Ge(Si)/SOI self-assembled nanoislands embedded in photonic crystal slabs of various periods with and without cavities

Distinctions in the Ge wetting layer formation and self-assembled island nucleation between single- and multilayer SiGe/Si(0 0 1) structures

Monolithically integrated InGaAs/GaAs/AlGaAs quantum well laser grown by MOCVD on exact Ge/Si(001) substrate

Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

Fine structure of the emission spectrum of a two-dimensional electron–hole liquid in SiGe/Si quantum wells

Visible Emission from a Dense Biexciton Gas in SiGe/Si Quantum Wells under External Anisotropic Strain

Influence of surface roughness on a change in the growth mode from two-dimensional to three-dimensional for strained SiGe heterostructures

Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates

On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si Substrates

Plasmonic enhancement of four-particle radiative recombination in SiGe quantum wells

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands

Transition from planar to island growth mode in SiGe structures fabricated on SiGe/Si(001) strain-relaxed buffers

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

Visible Luminescence of SiGe/Si Quantum Wells Under an External Anisotropic Deformation

Strain-Induced Intrinsic Splitting of the Biexciton Ground State in SiGe/Si Quantum Wells

Ge self-assembled islands grown on SiGe/Si(0 0 1) relaxed buffer layers

Enhancing the photoluminescence response of thick Ge-on-Si layers using photonic crystals

Comparative analysis of photo- and electroluminescence of multilayer structures with Ge(Si)/Si(001) self-assembled islands

Effect of growth temperature on photoluminescence of Ge(Si) self-assembled islands embedded in a tensile-strained Si layer

Radiation hardness of GeSi heterostructures with thin Ge layers

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

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