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Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

Journal of crystal growth, 2020-12, Vol.551, p.125903, Article 125903

2020

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MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

Journal of crystal growth, 2016-05, Vol.442, p.25-30

2016

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Polarization engineered N-polar Cs-free GaN photocathodes

Journal of applied physics, 2018-09, Vol.124 (11)

2018

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Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage

IEEE photonics technology letters, 2016-01, Vol.28 (1), p.39-42

2016

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Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

Scientific reports, 2020-01, Vol.10 (1), p.1426-1426, Article 1426

2020

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X-ray topography characterization of gallium nitride substrates for power device development

Journal of crystal growth, 2020-08, Vol.544 (C), p.125709, Article 125709

2020

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Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors

IEEE photonics journal, 2022-04, Vol.14 (2), p.1-12

2022

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Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Sensors (Basel, Switzerland), 2016-06, Vol.16 (6), p.927

2016

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Deposition of GaN films on crystalline rare earth oxides by MOCVD

Journal of crystal growth, 2014-08, Vol.399, p.49-53

2014

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Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE journal of the Electron Devices Society, 2019, Vol.7, p.581-588

2019

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Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations

Surface science, 2013-11, Vol.617, p.36-41

2013

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Drain-Voltage-Induced Secondary Effects in AlGaN/GaN HEMTs With Integrated Body-Diode

IEEE transactions on electron devices, 2020-10, Vol.67 (10), p.3983-3987

2020

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IEEE_Xplore

Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing

Journal of applied physics, 2023-04, Vol.133 (15)

2023

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Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

physica status solidi (b), 2023-08, Vol.260 (8), p.n/a

2023

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In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application

AIP advances, 2020-08, Vol.10 (8), p.085110-085110-6

2020

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Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate

Journal of applied physics, 2013-04, Vol.113 (16)

2013

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Photoluminescence from CdGa and HgGa acceptors in GaN

Journal of applied physics, 2024-04, Vol.135 (15)

2024

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Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

IEEE photonics technology letters, 2015-03, Vol.27 (5), p.498-501

2015

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IEEE_Xplore

Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency

Journal of applied physics, 2021-05, Vol.129 (19)

2021

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Aims and Scope of JEM, Embracing the Past and Looking Toward the Future

Journal of electronic materials, 2018-09, Vol.47 (9), p.4937-4937

2018

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The effect of annealing on photoluminescence from defects in ammonothermal GaN

Journal of applied physics, 2022-01, Vol.131 (3)

2022

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P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing

Journal of applied physics, 2021-08, Vol.130 (8)

2021

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Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

Journal of crystal growth, 2004-03, Vol.264 (1), p.172-177

2004

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Thermal annealing of GaN implanted with Be

Journal of applied physics, 2022-03, Vol.131 (12)

2022

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p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

Journal of applied physics, 2020-08, Vol.128 (8)

2020

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Synchrotron X-ray topography characterization of high quality ammonothermal-grown gallium nitride substrates

MOCVD growth of N-polar GaN on on-axis sapphire substrate: Impact of AlN nucleation layer on GaN surface hillock density

Polarization engineered N-polar Cs-free GaN photocathodes

Visible-Blind APD Heterostructure Design With Superior Field Confinement and Low Operating Voltage

Hillock assisted p-type enhancement in N-polar GaN:Mg films grown by MOCVD

X-ray topography characterization of gallium nitride substrates for power device development

Overview and Progress Toward High-Efficiency, Air Stable, Cs-Free III-Nitride Photocathode Detectors

Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

Deposition of GaN films on crystalline rare earth oxides by MOCVD

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

Homoepitaxial growth of non-polar AlN crystals using molecular dynamics simulations

Drain-Voltage-Induced Secondary Effects in AlGaN/GaN HEMTs With Integrated Body-Diode

Defect-mediated diffusion of implanted Mg in GaN: Suppressing dopant redistribution by sequential thermal and microwave annealing

Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic Chemical Vapor Deposition

In operando investigation of GaN PIN device characteristics under electron irradiation energies comparable to Pm-147 source for betavoltaic application

Modification of dislocation behavior in GaN overgrown on engineered AlN film-on-bulk Si substrate

Photoluminescence from CdGa and HgGa acceptors in GaN

Ion Implantation-Based Edge Termination to Improve III-N APD Reliability and Performance

Impurity incorporation and diffusion from regrowth interfaces in N-polar GaN photocathodes and the impact on quantum efficiency

Aims and Scope of JEM, Embracing the Past and Looking Toward the Future

The effect of annealing on photoluminescence from defects in ammonothermal GaN

P-type conductivity and suppression of green luminescence in Mg/N co-implanted GaN by gyrotron microwave annealing

Microstructural origin of leakage current in GaN/InGaN light-emitting diodes

Thermal annealing of GaN implanted with Be

p-type conductivity and damage recovery in implanted GaN annealed by rapid gyrotron microwave annealing

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