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Aluminum Nitride Thin Films Grown by Sol-Gel Spin Coating Technique

Solid state phenomena, 2019-04, Vol.290, p.137-141

2019

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Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode

Microelectronics international, 2021-09, Vol.38 (3), p.127-134

2021

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Growth Temperature Dependence of Sol-Gel Spin Coated Indium Nitride Thin Films

Solid state phenomena, 2019-04, Vol.290, p.153-159

2019

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Electrostatic Contribution to the Photo-Assisted Piezoresponse Force Microscopy by Photo-Induced Surface Charge

Microscopy and microanalysis, 2022-10, Vol.28 (5), p.1599-1603

2022

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X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures

Diffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum, 2023-05, Vol.425, p.9-14

2023

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Growth of InN thin films on different Si substrates at ambient temperature

Microelectronics international, 2013-04, Vol.30 (2), p.63-67

2013

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Dispersion of Surface and Interface Phonon Polariton Modes in Wurtzite Based Multilayer System

Journal of the Physical Society of Japan, 2011-08, Vol.80 (8), p.84712

2011

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Analysis on the performance of normalised gain difference power allocation for MIMO-NOMA-based VLC

International journal of nanotechnology., 2022, Vol.19 (2/3/4/5), p.113

2022

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Growth process of molybdenum disulfide thin films grown by thermal vapour sulfurization

Journal of materials science. Materials in electronics, 2019-06, Vol.30 (11), p.10419-10426

2019

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Reversible Circular Dichroism Induced by Energy Losses without Changing Chirality of Structure

Annalen der Physik, 2020-06, Vol.532 (6), p.n/a

2020

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Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique

Functional materials letters, 2021-07, Vol.14 (5), p.2151024

2021

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Carrier Density and Thickness Optimization of InxGa1-xN Layer by Scaps-1D Simulation for High Efficiency III-V Solar CelL

Sains Malaysiana, 2022-05, Vol.51 (5), p.1567-1576

2022

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Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Oriental journal of chemistry, 2021-08, Vol.37 (4), p.791-796

2021

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Characteristics of InGaN/AlN heterostructure grown by using MOCVD technique

International journal of nanotechnology., 2024, Vol.21 (4/5), p.214-225

2024

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UV Photodetector Based on Mg-Doped GaN Thin Films Prepared by Sol-Gel Spin Coating

Solid state phenomena, 2019-04, Vol.290, p.208-213

2019

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An investigation of GaN thin films on AlN on sapphire substrate by sol-gel spin coating method

AIP Conference Proceedings, 2017, Vol.1901 (1)

2017

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UV Photodetector Based on p-NiO film/n-Si Heterojunction Prepared by Thermal Oxidation

Journal of physics. Conference series, 2020-05, Vol.1535 (1), p.12001

2020

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Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

Solid state phenomena, 2019-04, Vol.290, p.142-146

2019

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Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Microelectronics international, 2023-01, Vol.40 (1), p.8-16

2023

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Synthesis of galium nitride thin films using sol-gel dip coating method

AIP Conference Proceedings, 2017, Vol.1901 (1)

2017

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Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

Microelectronics international, 2021-09, Vol.38 (3), p.119-126

2021

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The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Microelectronics international, 2021-09, Vol.38 (3), p.105-112

2021

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Ohmic-rectifying conversion of Ni contacts on ZnO and the possible determination of ZnO thin film surface polarity

PloS one, 2014-01, Vol.9 (1), p.e86544-e86544

2014

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Determination of acceptor concentration, depletion width, donor level movement and sensitivity factor of ZnO on diamond heterojunction under UV illumination

PloS one, 2014-02, Vol.9 (2), p.e89348-e89348

2014

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Sol-gel-derived gallium nitride thin films for ultraviolet photodetection

Microelectronics international, 2019-01, Vol.36 (1), p.8-13

2019

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Aluminum Nitride Thin Films Grown by Sol-Gel Spin Coating Technique

Effects of three-step magnesium doping in p-GaN layer on the properties of InGaN-based light-emitting diode

Growth Temperature Dependence of Sol-Gel Spin Coated Indium Nitride Thin Films

Electrostatic Contribution to the Photo-Assisted Piezoresponse Force Microscopy by Photo-Induced Surface Charge

X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures

Growth of InN thin films on different Si substrates at ambient temperature

Dispersion of Surface and Interface Phonon Polariton Modes in Wurtzite Based Multilayer System

Analysis on the performance of normalised gain difference power allocation for MIMO-NOMA-based VLC

Growth process of molybdenum disulfide thin films grown by thermal vapour sulfurization

Reversible Circular Dichroism Induced by Energy Losses without Changing Chirality of Structure

Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique

Carrier Density and Thickness Optimization of InxGa1-xN Layer by Scaps-1D Simulation for High Efficiency III-V Solar CelL

Effect of pH on the Synthesis of Cobalt Selenide Films by SILAR Method

Characteristics of InGaN/AlN heterostructure grown by using MOCVD technique

UV Photodetector Based on Mg-Doped GaN Thin Films Prepared by Sol-Gel Spin Coating

An investigation of GaN thin films on AlN on sapphire substrate by sol-gel spin coating method

UV Photodetector Based on p-NiO film/n-Si Heterojunction Prepared by Thermal Oxidation

Comparative Study of Gas Ratio on Indium Nitride Thin Films Grown on Flexible Substrates Prepared by Reactive Sputtering Method

Effects of indium composition on the surface morphological and optical properties of InGaN/GaN heterostructures

Synthesis of galium nitride thin films using sol-gel dip coating method

Effects of V/III ratio of InGaN quantum well at high growth temperature for near ultraviolet light emitting diodes

The role of growth temperature on the indium incorporation process for the MOCVD growth of InGaN/GaN heterostructures

Ohmic-rectifying conversion of Ni contacts on ZnO and the possible determination of ZnO thin film surface polarity

Determination of acceptor concentration, depletion width, donor level movement and sensitivity factor of ZnO on diamond heterojunction under UV illumination

Sol-gel-derived gallium nitride thin films for ultraviolet photodetection

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