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Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects

Applied physics. A, Materials science & processing, 2006-12, Vol.85 (4), p.371-385

Seyller, T.

2006

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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

New journal of physics, 2013-04, Vol.15 (4), p.43031-11

2013

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Terahertz radiation driven chiral edge currents in graphene

Physical review letters, 2011-12, Vol.107 (27), p.276601-276601, Article 276601

2011

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Multimodal spectromicroscopy of monolayer WS2 enabled by ultra-clean van der Waals epitaxy

2d materials, 2018-10, Vol.5 (4)

2018

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Development and character of gap states on alkali doping of molecular films

New journal of physics, 2014-02, Vol.16 (2), p.23011-12

2014

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Localized states influence spin transport in epitaxial graphene

Physical review letters, 2013-02, Vol.110 (6), p.067209-067209, Article 067209

2013

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Experimental analysis of the thermal annealing of hard a-C:H films

Diamond and related materials, 2014-05, Vol.45, p.43-57

2014

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Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

New journal of physics, 2013-12, Vol.15 (12), p.123034

2013

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Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

Physical review. B, 2019-01, Vol.99 (4), p.045443, Article 045443

2019

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Quantum size effects in quasi-free-standing Pb layers

Physical review. B, Condensed matter and materials physics, 2007-04, Vol.75 (16), Article 161401

2007

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Implanted bottom gate for epitaxial graphene on silicon carbide

Journal of physics. D, Applied physics, 2012-04, Vol.45 (15), p.154006-1-8

2012

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Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy

2d materials, 2018-07, Vol.5 (4), p.45010

2018

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First results from a second generation toroidal electron spectrometer

Journal of electron spectroscopy and related phenomena, 2005-06, Vol.144 (Complete), p.1001-1004

2005

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Band structure and many body effects in graphene

The European physical journal. ST, Special topics, 2007-09, Vol.148 (1), p.5-13

2007

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Facile Thermodynamically Controlled Synthesis of Intermetallic Zn 1– x Pd x /Al 2 O 3 and Its Methanol Steam Reforming Properties

Journal of physical chemistry. C, 2024-04, Vol.128 (16), p.6906-6916

2024

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Passivation of hexagonal SiC surfaces by hydrogen termination

Journal of physics. Condensed matter, 2004-05, Vol.16 (17), p.S1755-S1782

Seyller, Thomas

2004

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The electronic structure of pentacene revisited

Journal of electron spectroscopy and related phenomena, 2009-08, Vol.174 (1), p.22-27

2009

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Annealing effects on a-SiC:H and a-SiCN:H films deposited by plasma CVD methods

Vacuum, 2020-08, Vol.178, p.109410, Article 109410

2020

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Facile Thermodynamically Controlled Synthesis of Intermetallic Zn1–x Pd x /Al2O3 and Its Methanol Steam Reforming Properties

Journal of physical chemistry. C, 2024-04, Vol.128 (16), p.6906-6916

2024

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Epitaxial Graphenes on Silicon Carbide

MRS bulletin, 2010-04, Vol.35 (4), p.296-305

2010

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High-transconductance graphene solution-gated field effect transistors

Applied physics letters, 2011-07, Vol.99 (3), p.033503-033503-3

2011

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Analysis of a-SiCN:H films by X-ray photoelectron spectroscopy

Vacuum, 2017-04, Vol.138, p.191-198

2017

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ECR plasma deposited a-SiCN:H as insulating layer in piezoceramic modules

Vacuum, 2018-09, Vol.155, p.118-126

2018

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Mapping disorder–order induced changes to the Fermi surface of Cu3Au using a new toroidal electron energy analyser

Journal of electron spectroscopy and related phenomena, 2005-06, Vol.144-147 (Complete), p.515-518

2005

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Doping of single-walled carbon nanotube bundles by Brønsted acids

Physical chemistry chemical physics : PCCP, 2003-12, Vol.5 (24), p.5472-5476

2003

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Electronic properties of SiC surfaces and interfaces: some fundamental and technological aspects

Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

Terahertz radiation driven chiral edge currents in graphene

Multimodal spectromicroscopy of monolayer WS2 enabled by ultra-clean van der Waals epitaxy

Development and character of gap states on alkali doping of molecular films

Localized states influence spin transport in epitaxial graphene

Experimental analysis of the thermal annealing of hard a-C:H films

Structural investigation of nanocrystalline graphene grown on (6√3 × 6√3)R30°-reconstructed SiC surfaces by molecular beam epitaxy

Probing the structural transition from buffer layer to quasifreestanding monolayer graphene by Raman spectroscopy

Quantum size effects in quasi-free-standing Pb layers

Implanted bottom gate for epitaxial graphene on silicon carbide

Multimodal spectromicroscopy of monolayer WS 2 enabled by ultra-clean van der Waals epitaxy

First results from a second generation toroidal electron spectrometer

Band structure and many body effects in graphene

Facile Thermodynamically Controlled Synthesis of Intermetallic Zn 1– x Pd x /Al 2 O 3 and Its Methanol Steam Reforming Properties

Passivation of hexagonal SiC surfaces by hydrogen termination

The electronic structure of pentacene revisited

Annealing effects on a-SiC:H and a-SiCN:H films deposited by plasma CVD methods

Facile Thermodynamically Controlled Synthesis of Intermetallic Zn1–x Pd x /Al2O3 and Its Methanol Steam Reforming Properties

Epitaxial Graphenes on Silicon Carbide

High-transconductance graphene solution-gated field effect transistors

Analysis of a-SiCN:H films by X-ray photoelectron spectroscopy

ECR plasma deposited a-SiCN:H as insulating layer in piezoceramic modules

Mapping disorder–order induced changes to the Fermi surface of Cu3Au using a new toroidal electron energy analyser

Doping of single-walled carbon nanotube bundles by Brønsted acids

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