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Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Applied physics letters, 2005-09, Vol.87 (13)

2005

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Abnormally enhanced dielectric constant in ZrO2/Ta2O5 multi-laminate structures by metallic Ta formation

Materials letters, 2015-09, Vol.154, p.148-151

2015

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Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

Applied physics letters, 2007-07, Vol.91 (5)

2007

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Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects

Microelectronic engineering, 2012, Vol.89, p.58-61

2012

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Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

Japanese Journal of Applied Physics, 2001, Vol.40 (10R), p.5850-5855

2001

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The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress

2009 IEEE International Reliability Physics Symposium, 2009, p.825-827

2009

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Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory

Applied physics letters, 2003-09, Vol.83 (11), p.2160-2162

2003

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Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer

Microelectronic engineering, 2009-03, Vol.86 (3), p.374-378

2009

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ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 FERROELECTRIC THIN FILMS PREPARED BY METALORGANIC DECOMPOSITION METHOD

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 2A, pp. 727-730. 2002, 2002, Vol.41 (2A), p.727-730

2002

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Evaluation of (Bi,La)4Ti3O12 Thin Film Capacitor Fabricated on a Sub-micron Bottom Electrode in a FeRAM Device

Journal of the Korean Physical Society, 2011-01, Vol.58 (1), p.132-137

2011

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Filling of 60-nm Trench Pattern by Copper Electrodeposition on Copper Seed Layer Formed by Using a Self-Assembled Monolayer Process

Journal of the Korean Physical Society, 2009, 55(5), , pp.1986-1990

2009

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EFFECTS OF CRYSTALLIZATION ANNEALING SEQUENCE FOR SrBi2Ta2O9 (SBT) FILM ON Pt/SBT INTERFACE MORPHOLOGY AND ELECTRICAL PROPERTIES OF FERROELECTRIC CAPACITOR

Jpn.J.Appl.Phys ,Part 1. Vol. 39, no. 9B, pp. 5465-5468. 2000, 2000, Vol.39 (9B), p.5465-5468

2000

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Effect of Low-Energy Accelerated Ion Bombardment on the Properties of Metal-Organic Decomposition Derived SrBi2(Ta,Nb)2O9 Thin Films Processed at Low Temperature

Journal of the American Ceramic Society, 2004-04, Vol.87 (4), p.720-723

2004

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Platinum (100) Hillock Growth in Pt/Ti Electrode Stack for SrBi2Ta2O9 Ferroelectric Random Access Memory

Journal of electroceramics, 2004-07, Vol.13 (1-3), p.55-63

2004

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Low-temperature processing of sol–gel-derived lead–zirconate–titanate thin films by oxygen-plasma treatment

Current applied physics, 2002-10, Vol.2 (5), p.407-409

2002

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Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Integrated ferroelectrics, 2005-01, Vol.70 (1), p.89-97

2005

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Integration of Novel Capacitor Structure for High Density FeRAM With Barrier Metal TiAlN and (Bi,La)4Ti3O12

Integrated ferroelectrics, 2004-01, Vol.66 (1), p.107-113

2004

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EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

Integrated ferroelectrics, 2005-01, Vol.74 (1), p.131-136

2005

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Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum

Japanese Journal of Applied Physics, 2004-05, Vol.43 (5A), p.L624

2004

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OHMIC CONTACT PROPERTIES OF TUNGSTEN PLUG AND FERROELECTRIC PROPERTIES OF (Bi,La)4Ti3O12 THIN FILM IN STACKED CAPACITOR STRUCTURE

Japanese Journal of Applied Physics, Part 1, 2002, Vol.41 (12), p.7327-7331

2002

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STACKED Pt/SrBi2Ta2-xNbxO9/Pt/IrOx/Ir CAPACITOR ON POLY PLUG

Jpn.J.Appl.Phys ,Part 1. Vol. 41, no. 1, pp. 66-69. 2002, 2002-01, Vol.41 (1), p.66-69

2002

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EFFECTS OF HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS ON STRUCTURAL STABILITIES OF HYBRID Pt/IrO2 /Ir STACK AND SINGLE-LAYER Ir BOTTOM ELECTRODES

Jpn.J.Appl.Phys ,Part 1. Vol. 43, no. 5A, pp. 2651-2654. 2004, 2004, Vol.43 (5A), p.2651-2654

2004

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Intrinsic stress dependence of Pt hillock formation and its related electrical properties of SBT capacitor

Integrated ferroelectrics, 1999-09, Vol.25 (1-4), p.299-309

1999

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EFFECTS OF BOTTOM ELECTRODES (Pt AND IrO2) ON PHYSICAL AND ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 (BLT) THIN FILM

Jpn.J.Appl.Phys ,Part 1. Vol. 40, no. 9B, pp. 5569-5571. 2001, 2001, Vol.40 (9B), p.5569-5571

2001

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Characterization of Hynix 16M Feram Adopted Novel Sensing Scheme

Integrated ferroelectrics, 2003-01, Vol.53 (1), p.343-351

2003

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Effect of nitrogen incorporation on improvement of leakage properties in high-k HfO2 capacitors treated by N2-plasma

Abnormally enhanced dielectric constant in ZrO2/Ta2O5 multi-laminate structures by metallic Ta formation

Modified atomic layer deposition of RuO2 thin films for capacitor electrodes

Bias polarity and frequency effects of Cu-induced dielectric breakdown in damascene Cu interconnects

Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate

The characteristics of Cu-drift induced dielectric breakdown under alternating polarity bias temperature stress

Platinum(100) hillock growth in a Pt/Ti electrode stack for ferroelectric random access memory

Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer

ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 FERROELECTRIC THIN FILMS PREPARED BY METALORGANIC DECOMPOSITION METHOD

Evaluation of (Bi,La)4Ti3O12 Thin Film Capacitor Fabricated on a Sub-micron Bottom Electrode in a FeRAM Device

Filling of 60-nm Trench Pattern by Copper Electrodeposition on Copper Seed Layer Formed by Using a Self-Assembled Monolayer Process

EFFECTS OF CRYSTALLIZATION ANNEALING SEQUENCE FOR SrBi2Ta2O9 (SBT) FILM ON Pt/SBT INTERFACE MORPHOLOGY AND ELECTRICAL PROPERTIES OF FERROELECTRIC CAPACITOR

Effect of Low-Energy Accelerated Ion Bombardment on the Properties of Metal-Organic Decomposition Derived SrBi2(Ta,Nb)2O9 Thin Films Processed at Low Temperature

Platinum (100) Hillock Growth in Pt/Ti Electrode Stack for SrBi2Ta2O9 Ferroelectric Random Access Memory

Low-temperature processing of sol–gel-derived lead–zirconate–titanate thin films by oxygen-plasma treatment

Crystallographic Orientation Dependent Ferroelectric Characteristics of (Bi3.3,La0.8)Ti3O12 (BLT) Capacitors

Integration of Novel Capacitor Structure for High Density FeRAM With Barrier Metal TiAlN and (Bi,La)4Ti3O12

EFFECT OF NITROGEN INCORPORATION ON ELECTRICAL PROPERTIES OF HIGH-K NANOMIXED HfxAlyOz FILM CAPACITORS GROWN ON RU METAL ELECTRODES BY ATOMIC LAYER DEPOSITION

Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum

OHMIC CONTACT PROPERTIES OF TUNGSTEN PLUG AND FERROELECTRIC PROPERTIES OF (Bi,La)4Ti3O12 THIN FILM IN STACKED CAPACITOR STRUCTURE

STACKED Pt/SrBi2Ta2-xNbxO9/Pt/IrOx/Ir CAPACITOR ON POLY PLUG

EFFECTS OF HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION OF Pb(Zr,Ti)O3 THIN FILMS ON STRUCTURAL STABILITIES OF HYBRID Pt/IrO2 /Ir STACK AND SINGLE-LAYER Ir BOTTOM ELECTRODES

Intrinsic stress dependence of Pt hillock formation and its related electrical properties of SBT capacitor

EFFECTS OF BOTTOM ELECTRODES (Pt AND IrO2) ON PHYSICAL AND ELECTRICAL PROPERTIES OF Bi4-xLaxTi3O12 (BLT) THIN FILM

Characterization of Hynix 16M Feram Adopted Novel Sensing Scheme

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