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Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

ACS nano, 2019-09, Vol.13 (9), p.10294-10300

2019

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Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Small (Weinheim an der Bergstrasse, Germany), 2020-12, Vol.16 (49), p.e2004371-n/a

2020

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Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor

Small (Weinheim an der Bergstrasse, Germany), 2021-07, Vol.17 (30), p.e2100242-n/a

2021

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A Systematic Review on Recent Trends, Challenges, Privacy and Security Issues of Underwater Internet of Things

Sensors (Basel, Switzerland), 2021-12, Vol.21 (24), p.8262

2021

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Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

Advanced science, 2021-06, Vol.8 (12), p.2100208-n/a

2021

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Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe2 Insertion Layer

Advanced materials interfaces, 2023-03, Vol.10 (7), p.n/a

2023

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Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Applied physics letters, 2018-09, Vol.113 (10)

2018

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Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

IEEE electron device letters, 2018-12, Vol.39 (12), p.1828-1831

2018

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Deep neural network-based prediction for low-energy beam transport tuning

Journal of the Korean Physical Society, 2023-10, Vol.83 (8), p.647-653

2023

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An Artificial Neuron Using a Bipolar Electrochemical Metallization Switch and Its Enhanced Spiking Properties through Filament Confinement

Advanced electronic materials, 2021-01, Vol.7 (1), p.n/a

2021

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Charge transfer mechanism for realization of double negative differential transconductance

NPJ 2D materials and applications, 2024-02, Vol.8 (1), p.15-9, Article 15

2024

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Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon

Materials today advances, 2024-03, Vol.21, p.100475, Article 100475

2024

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Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor

Materials today advances, 2023-06, Vol.18, p.100367, Article 100367

2023

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Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

ACS applied materials & interfaces, 2019-03, Vol.11 (9), p.9182-9189

2019

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Clinical significance of preoperative neutrophil-lymphocyte versus platelet-lymphocyte ratio in patients with operable colorectal cancer

Biomarkers, 2012-05, Vol.17 (3), p.216-222

2012

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Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure

Journal of alloys and compounds, 2023-03, Vol.937, p.168327, Article 168327

2023

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Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

ACS applied materials & interfaces, 2023-07, Vol.15 (26), p.31608-31616

2023

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Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure

ACS applied materials & interfaces, 2019-02, Vol.11 (6), p.6230-6237

2019

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Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3‑Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

ACS applied materials & interfaces, 2019-06, Vol.11 (23), p.20949-20955

2019

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Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact

ACS applied materials & interfaces, 2019-09, Vol.11 (37), p.34084-34090

2019

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Clinical importance of Bcl-6-positive non-deep-site involvement in non-HIV-related primary central nervous system diffuse large B-cell lymphoma

Journal of neuro-oncology, 2011-09, Vol.104 (3), p.825-831

2011

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Enhanced reasoning with multilevel flow modeling based on time-to-detect and time-to-effect concepts

Nuclear engineering and technology, 2018-05, Vol.50 (4), p.553-561

2018

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Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS 2 Channel and Its Application to Infrared Detectable Phototransistors

Advanced science, 2021-06, Vol.8 (12)

2021

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Prediction of severe accident occurrence time using support vector machines

Nuclear Engineering and Technology, 2015, 47(1), , pp.74-84

2015

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The effect of source power on statistical characterization of underwater acoustic communication channel in shallow water

2012 Oceans, 2012, p.1-4

2012

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Infrared Detectable MoS2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse

Hysteresis Modulation on Van der Waals‐Based Ferroelectric Field‐Effect Transistor by Interfacial Passivation Technique and Its Application in Optic Neural Networks

Enhancement of Synaptic Characteristics Achieved by the Optimization of Proton–Electron Coupling Effect in a Solid‐State Electrolyte‐Gated Transistor

A Systematic Review on Recent Trends, Challenges, Privacy and Security Issues of Underwater Internet of Things

Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS2 Channel and Its Application to Infrared Detectable Phototransistors

Highly Reliable Electrochemical Metallization Threshold Switch Through Conductive Filament Engineering Using Two‐Dimensional PtSe2 Insertion Layer

Super steep-switching (SS ≈ 2 mV/decade) phase-FinFET with Pb(Zr0.52Ti0.48)O3 threshold switching device

Low-Temperature Hybrid Dopant Activation Technique Using Pulsed Green Laser for Heavily-Doped n-Type SiGe Source/Drain

Deep neural network-based prediction for low-energy beam transport tuning

An Artificial Neuron Using a Bipolar Electrochemical Metallization Switch and Its Enhanced Spiking Properties through Filament Confinement

Charge transfer mechanism for realization of double negative differential transconductance

Dielectric interface engineering using aminosilane coupling agent for enhancement of negative differential resistance phenomenon

Effective threshold voltage modulation technique for steep-slope 2D atomic threshold switching field-effect transistor

Nitrogen-Induced Filament Confinement Technique for a Highly Reliable Hafnium-Based Electrochemical Metallization Threshold Switch and Its Application to Flexible Logic Circuits

Clinical significance of preoperative neutrophil-lymphocyte versus platelet-lymphocyte ratio in patients with operable colorectal cancer

Effective Schottky barrier height and interface trap density reduction engineering using 2-dimensional reduced graphene oxide interlayer for metal-interlayer-semiconductor contact structure

Highly Tunable Negative Differential Resistance Device Based on Insulator-to-Metal Phase Transition of Vanadium Dioxide

Schottky Barrier Height Modulation Using Interface Characteristics of MoS 2 Interlayer for Contact Structure

Reduction of Threshold Voltage Hysteresis of MoS2 Transistors with 3‑Aminopropyltriethoxysilane Passivation and Its Application for Improved Synaptic Behavior

Ultralow Schottky Barrier Height Achieved by Using Molybdenum Disulfide/Dielectric Stack for Source/Drain Contact

Clinical importance of Bcl-6-positive non-deep-site involvement in non-HIV-related primary central nervous system diffuse large B-cell lymphoma

Enhanced reasoning with multilevel flow modeling based on time-to-detect and time-to-effect concepts

Steep‐Slope Gate‐Connected Atomic Threshold Switching Field‐Effect Transistor with MoS 2 Channel and Its Application to Infrared Detectable Phototransistors

Prediction of severe accident occurrence time using support vector machines

The effect of source power on statistical characterization of underwater acoustic communication channel in shallow water

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