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Quaternary GaInAsN with high In content: Dependence of band gap energy on N content

Applied physics letters, 2002-04, Vol.80 (14), p.2448-2450

2002

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SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

Applied surface science, 2003-01, Vol.203, p.486-489

2003

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Raman and dielectric function spectra of strained GaAs1−xSbx layers on InP

Journal of applied physics, 2000-06, Vol.87 (12), p.8522-8525

2000

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Improved performance of 2-μm GaInAs strained quantum-well lasers on InP by increasing carrier confinement

IEEE photonics technology letters, 2001-05, Vol.13 (5), p.412-414

2001

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InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation

Physica. E, Low-dimensional systems & nanostructures, 1998-07, Vol.2 (1), p.320-324

1998

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High in-content InP-substrate based gainasn and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 μm wavelength range

2004

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The realization of long-wavelength ( 2.3 µm) Ga 1 x In x As 1 y N y quantum wells on InP by molecular-beam epitaxy

Journal of physics. Condensed matter, 2004-08, Vol.16 (31), p.S2995-S3008

2004

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The realization of long-wavelength (lambda < or = 2.3 mm) Ga1-xInxAsl-yNy quantum wells on InP by molecular-beam epitaxy

Journal of physics. Condensed matter, 2004-08, Vol.16 (31), p.S2995-S3008

2004

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The realization of long-wavelength (λ ≤ 2.3 μm) Ga1-xInxAs1-yNy quantum wells on InP by molecular-beam epitaxy: Special issue on Dilute Nitrides

Journal of physics. Condensed matter, 2004, Vol.16 (31), p.2995-3008

2004

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Improved performance of 2-[mu]m GaInAs strained quantum-well lasers on InP by increasing carrier confinement

IEEE photonics technology letters, 2001-05, Vol.13 (5), p.412

2001

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Improved performance of 2-mum GaInAs strained quantum-well lasers on InP by increasing carrier confinement

IEEE photonics technology letters, 2001-05, Vol.13 (5), p.412-414

2001

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Improved performance of 2-micron GalnAs strained quantum-well lasers on InP by increasing carrier confinement

IEEE photonics technology letters, 2001-05, Vol.13 (5), p.412-414

2001

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Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 μm) GaInAsN QWs on InP

MRS proceedings, 2002, Vol.744, Article M10.2

2002

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High In content GaInAsN on InP: composition dependent band gap energy and luminescence properties

Conference Proceedings. 14th Indium Phosphide and Related Materials Conference (Cat. No.02CH37307), 2002, p.389-392

2002

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High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 /spl mu/m wavelength range

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004, 2004, p.32-35

2004

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SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

Applied surface science, 2003, Vol.203-04, p.486-489

2003

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Avant-propos. Ressource et ressourcement

Droit et société, 2019-04, Vol.101 (1), p.5-10

Serres, Michel

2019

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The realization of long-wavelength (λ ≤ 2.3 µm) Ga1−xInxAs1−yNy quantum wells on InP by molecular-beam epitaxy

Journal of physics. Condensed matter, 2004-08, Vol.16, p.S2995

2004

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Un panel français: L’Étude longitudinale par Internet pour les sciences sociales (Elipss)

2021

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Epitaxy and characterisation of dilute III–As1−yNy on GaAs and InP

IEE proceedings. Optoelectronics, 2004, Vol.151 (5), p.247-253

2004

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Les fondements historiques du droit européen des affaires

Mages, Alexis

2021

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Complexité et désordre: Éléments de réflexion

Lévy, Jean-Claude S

1, 2021

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Cultures de l'information

2014

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Quaternary GaInAsN with high In content: Dependence of band gap energy on N content

SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

Raman and dielectric function spectra of strained GaAs1−xSbx layers on InP

Improved performance of 2-μm GaInAs strained quantum-well lasers on InP by increasing carrier confinement

InAs/(GaIn)Sb superlattices for IR optoelectronics: Strain optimization by controlled interface formation

High in-content InP-substrate based gainasn and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 μm wavelength range

The realization of long-wavelength ( 2.3 µm) Ga 1 x In x As 1 y N y quantum wells on InP by molecular-beam epitaxy

The realization of long-wavelength (lambda < or = 2.3 mm) Ga1-xInxAsl-yNy quantum wells on InP by molecular-beam epitaxy

The realization of long-wavelength (λ ≤ 2.3 μm) Ga1-xInxAs1-yNy quantum wells on InP by molecular-beam epitaxy: Special issue on Dilute Nitrides

Improved performance of 2-[mu]m GaInAs strained quantum-well lasers on InP by increasing carrier confinement

Improved performance of 2-mum GaInAs strained quantum-well lasers on InP by increasing carrier confinement

Improved performance of 2-micron GalnAs strained quantum-well lasers on InP by increasing carrier confinement

Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 μm) GaInAsN QWs on InP

High In content GaInAsN on InP: composition dependent band gap energy and luminescence properties

High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 /spl mu/m wavelength range

SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

Avant-propos. Ressource et ressourcement

The realization of long-wavelength (λ ≤ 2.3 µm) Ga1−xInxAs1−yNy quantum wells on InP by molecular-beam epitaxy

Un panel français: L’Étude longitudinale par Internet pour les sciences sociales (Elipss)

Un panel français

Epitaxy and characterisation of dilute III–As1−yNy on GaAs and InP

Les fondements historiques du droit européen des affaires

La mémoire des saints originels entre XVIe et XVIIIe siècle

Complexité et désordre: Éléments de réflexion

Cultures de l'information

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