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Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

Scientific reports, 2018-02, Vol.8 (1), p.1-7, Article 2124

2018

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Comparative analysis of amorphous silicon and silicon nitride multilayer by spectroscopic ellipsometry and transmission electron microscopy

Thin solid films, 2007-02, Vol.515 (7), p.3559-3562

2007

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On the mechanisms of hydrogen-induced blistering in RF-sputtered amorphous Ge

CrystEngComm, 2017, Vol.19 (11), p.1486-1494

2017

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Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

Thin solid films, 2019-06, Vol.679, p.58-63

2019

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Acceleration of cold Rb atoms by frequency modulated light pulses

The European physical journal. D, Atomic, molecular, and optical physics, 2007-07, Vol.44 (1), p.141-149

2007

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Comparison in formation, optical properties and applicability of DC magnetron and RF sputtered aluminum oxide films

Vacuum, 2016-06, Vol.128, p.213-218

2016

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Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

Applied surface science, 2013-03, Vol.269, p.12-16

2013

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Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing

Applied surface science, 2013-02, Vol.267, p.30-34

2013

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Characterization of sputtered and annealed niobium oxide films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction

Thin solid films, 2008-09, Vol.516 (22), p.8096-8100

2008

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Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

Vacuum, 2012-01, Vol.86 (6), p.711-713

2012

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Nanopattern formation in UV laser treated a-AlOx and nc-Al/AlOx layers

Vacuum, 2014-11, Vol.109, p.200-205

2014

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Fabrication of Nanopatterns in a-AlOx Thin Films by a Single Laser Pulse

Materials science forum, 2015-02, Vol.812, p.259-264

2015

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Fabrication of Nanopatterns in a-AlO sub(x) Thin Films by a Single Laser Pulse

Materials science forum, 2015-02, Vol.812, p.259-264

2015

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Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.289-293

2008

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Refractive index of sputtered silicon oxynitride layers for antireflection coating

Vacuum, 2001-05, Vol.61 (2), p.245-249

2001

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Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers

Crystal research and technology (1979), 2011-08, Vol.46 (8), p.877-880

2011

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Modification of Al/Si interface and Schottky barrier height with chemical treatment

Applied surface science, 2002-05, Vol.190 (1), p.441-444

2002

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Interaction of frequency modulated light pulses with rubidium atoms in a magneto-optical trap

The European physical journal. D, Atomic, molecular, and optical physics, 2006-07, Vol.39 (1), p.59-66

2006

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Fabrication of a-SiGe structure by rf sputtering for solar cell purposes

Physica status solidi. C, 2003-02 (3), p.857-861

2003

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Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

Vacuum, 2009-08, Vol.84 (1), p.137-140

2009

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Single-step growth of InGaAsP/InP laser array on patterned InP substrate

Physica. E, Low-dimensional systems & nanostructures, 2004-07, Vol.23 (3), p.334-338

2004

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Pulse shortening of actively mode-locked diode lasers by wavelength tuning

Applied physics letters, 1987-05, Vol.50 (18), p.1213-1215

1987

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Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films

Microelectronics and reliability, 2005-07, Vol.45 (7), p.1252-1256

2005

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High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm

Materials science & engineering. B, Solid-state materials for advanced technology, 1994-12, Vol.28 (1), p.296-298

1994

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Inhomogeneous gain saturation in a mode-locked semiconductor laser

Applied physics letters, 1988-07, Vol.53 (3), p.169-171

1988

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Electron irradiation induced amorphous SiO2 formation at metal oxide/Si interface at room temperature; electron beam writing on interfaces

Comparative analysis of amorphous silicon and silicon nitride multilayer by spectroscopic ellipsometry and transmission electron microscopy

On the mechanisms of hydrogen-induced blistering in RF-sputtered amorphous Ge

Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films

Acceleration of cold Rb atoms by frequency modulated light pulses

Comparison in formation, optical properties and applicability of DC magnetron and RF sputtered aluminum oxide films

Evolution of the structure and hydrogen bonding configuration in annealed hydrogenated a-Si/a-Ge multilayers and layers

Hydrogen behaviour in amorphous Si/Ge nano-structures after annealing

Characterization of sputtered and annealed niobium oxide films using spectroscopic ellipsometry, Rutherford backscattering spectrometry and X-ray diffraction

Determination of hydrogen concentration in a-Si and a-Ge layers by elastic recoil detection analysis

Nanopattern formation in UV laser treated a-AlOx and nc-Al/AlOx layers

Fabrication of Nanopatterns in a-AlOx Thin Films by a Single Laser Pulse

Fabrication of Nanopatterns in a-AlO sub(x) Thin Films by a Single Laser Pulse

Structural modifications induced in hydrogenated amorphous Si/Ge multilayers by heat treatments

Refractive index of sputtered silicon oxynitride layers for antireflection coating

Hydrogen release in annealed hydrogenated a-Si/a-Ge multilayers

Modification of Al/Si interface and Schottky barrier height with chemical treatment

Interaction of frequency modulated light pulses with rubidium atoms in a magneto-optical trap

Fabrication of a-SiGe structure by rf sputtering for solar cell purposes

Investigation of thermal stability of hydrogenated amorphous Si/Ge multilayers

Single-step growth of InGaAsP/InP laser array on patterned InP substrate

Pulse shortening of actively mode-locked diode lasers by wavelength tuning

Study on the RF Sputtered hydrogenated amorphous silicon–germanium thin films

High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm

Inhomogeneous gain saturation in a mode-locked semiconductor laser

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