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The Use of Medium-Energy Atom Beams for Solid-State PIXE Diagnostics

Technical physics, 2021, Vol.66 (1), p.155-160

2021

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The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

Semiconductors (Woodbury, N.Y.), 2023-05, Vol.57 (5), p.268-271

2023

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Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.153-155

2019

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Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

Semiconductors (Woodbury, N.Y.), 2019-02, Vol.53 (2), p.156-159

2019

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Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate

Physics of the solid state, 2017-12, Vol.59 (12), p.2374-2380

2017

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Evidence of multiphase nucleation in perovskite film growth on MgO substrate from medium energy ion scattering analysis : Example of YBaCuO and (Ba,Sr)TiO3

Thin solid films, 2005-12, Vol.492 (1-2), p.146-152

2005

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Cationic disorder and phase segregation in LaAlO3/SrTiO3 heterointerfaces evidenced by medium-energy ion spectroscopy

Physical review letters, 2009-10, Vol.103 (14), p.146101-146101

2009

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Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges

Technical physics letters, 2023-12, Vol.49 (12), p.195-198

2023

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Three-dimensional simulation of neutral transport in gases and weakly ionized plasmas

Plasma physics and controlled fusion, 2021-02, Vol.63 (2), p.25005

2021

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Cation stoichiometry and electrical transport properties of the NdGaO3/(0 0 1)SrTiO3 interface

Journal of physics. Condensed matter, 2015-07, Vol.27 (25), p.255004-255004

2015

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Improved cationic stoichiometry and insulating behavior at the interface of LaAlO3/SrTiO3 formed at high oxygen pressure during pulsed-laser deposition

Europhysics letters, 2011-02, Vol.93 (3), p.37001

2011

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Influence of mechanical stresses on the charge state of the interface in the LaAlO3/(001)SrTiO3 heterostructures with a distorted stoichiometry

Physics of the solid state, 2018, Vol.60 (1), p.173-177

2018

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Initial Stages of Growth of Barium Zirconate Titanate and Barium Stannate Titanate Films on Single-Crystal Sapphire and Silicon Carbide

Physics of the solid state, 2018-10, Vol.60 (10), p.2091-2096

2018

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Electro- and Magnetotransport near a LaAlO3/SrTiO3 Interphase Boundary

Physics of the solid state, 2018-06, Vol.60 (6), p.1235-1238

2018

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Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations

Physics of the solid state, 2016-12, Vol.58 (12), p.2560-2566

2016

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The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

Technical physics letters, 2018-07, Vol.44 (7), p.574-576

2018

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Dislocation-related photoluminescence in silicon implanted with fluorine ions

Technical physics letters, 2017, Vol.43 (1), p.50-52

2017

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Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering

Physics of the solid state, 2010-12, Vol.52 (12), p.2561-2564

2010

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Structural features and phase transition temperature of BaxSr1-xTiO3 films grown on various substrates

Journal of physics. Condensed matter, 2002-07, Vol.14 (27), p.6823-6831, Article 306

2002

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Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1108-1112

2003

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Structural distortions induced during stress relaxation affecting electrical transport of nanometer-thick La0.67(Ba,Ca)0.33MnO3 films

Physica. B, Condensed matter, 2009-12, Vol.404 (23-24), p.5234-5236

2009

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Emitting a-SiOx(Er) films and a-SiOx(Er)/a-Si:H microcavities doped with Er by remote magnetron sputtering technique

Nanotechnology, 2008-08, Vol.19 (31), p.315201-315201 (5)

2008

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Strain-facilitated multi-photon upconversion in epitaxial Y2O3:Yb,Er thin films

Optical materials, 2024-03, Vol.149, p.115089, Article 115089

2024

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Influence of Mg and Mn doping on the RF-microwave dielectric properties of BaxSr1-xTiO3 films

Ferroelectrics, 2003-01, Vol.286, p.267-278

2003

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INFLUENCE OF STRUCTURAL PROPERTIES ON RF AND MICROWAVE CHARACTERISTICS OF BaSrTiO3 FILMS ON VARIOUS SUBSTRATES

Integrated ferroelectrics, 2002-01, Vol.47, p.207-216

2002

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The Use of Medium-Energy Atom Beams for Solid-State PIXE Diagnostics

The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates

Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions

Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

Initial stages of the growth of barium strontium titanate films on a semi-isolating silicon carbide substrate

Evidence of multiphase nucleation in perovskite film growth on MgO substrate from medium energy ion scattering analysis : Example of YBaCuO and (Ba,Sr)TiO3

Cationic disorder and phase segregation in LaAlO3/SrTiO3 heterointerfaces evidenced by medium-energy ion spectroscopy

Quantum Yield of an Avalanche Silicon Photodiode in the 114–170 and 210–1100 nm Wavelength Ranges

Three-dimensional simulation of neutral transport in gases and weakly ionized plasmas

Cation stoichiometry and electrical transport properties of the NdGaO3/(0 0 1)SrTiO3 interface

Improved cationic stoichiometry and insulating behavior at the interface of LaAlO3/SrTiO3 formed at high oxygen pressure during pulsed-laser deposition

Influence of mechanical stresses on the charge state of the interface in the LaAlO3/(001)SrTiO3 heterostructures with a distorted stoichiometry

Initial Stages of Growth of Barium Zirconate Titanate and Barium Stannate Titanate Films on Single-Crystal Sapphire and Silicon Carbide

Electro- and Magnetotransport near a LaAlO3/SrTiO3 Interphase Boundary

Elastically strained and relaxed La0.67Ca0.33MnO3 films grown on lanthanum aluminate substrates with different orientations

The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers

Dislocation-related photoluminescence in silicon implanted with fluorine ions

Investigation of the initial stages of the growth of barium strontium titanate ferroelectric films by medium-energy ion scattering

Structural features and phase transition temperature of BaxSr1-xTiO3 films grown on various substrates

Photoluminescence in Er-implanted AlGaN/GaN superlattices and GaN epilayers

Structural distortions induced during stress relaxation affecting electrical transport of nanometer-thick La0.67(Ba,Ca)0.33MnO3 films

Emitting a-SiOx(Er) films and a-SiOx(Er)/a-Si:H microcavities doped with Er by remote magnetron sputtering technique

Strain-facilitated multi-photon upconversion in epitaxial Y2O3:Yb,Er thin films

Influence of Mg and Mn doping on the RF-microwave dielectric properties of BaxSr1-xTiO3 films

INFLUENCE OF STRUCTURAL PROPERTIES ON RF AND MICROWAVE CHARACTERISTICS OF BaSrTiO3 FILMS ON VARIOUS SUBSTRATES

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