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2D WSe2/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection

Applied physics letters, 2018-10, Vol.113 (16)

2018

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Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

Nature communications, 2020-03, Vol.11 (1), p.1574-1574, Article 1574

2020

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ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

Nature communications, 2019-04, Vol.10 (1), p.1998-1998, Article 1998

2019

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High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time

Scientific reports, 2018-08, Vol.8 (1), p.1-7, Article 11545

2018

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Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

Nano letters, 2016-02, Vol.16 (2), p.1293-1298

2016

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Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Advanced materials (Weinheim), 2017-08, Vol.29 (30), p.n/a

2017

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Performance enhancement of multilayer MoS2 phototransistors via photoresist encapsulation

Current Applied Physics, 2022, 41(0), , pp.14-17

2022

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Mixed‐Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

Advanced functional materials, 2017-12, Vol.27 (47), p.n/a

2017

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Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

Nano letters, 2018-03, Vol.18 (3), p.1937-1945

2018

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Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n‑MoS2 and p‑MoTe2 Transistors

Nano letters, 2019-04, Vol.19 (4), p.2456-2463

2019

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Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators

Nature communications, 2024-01, Vol.15 (1), p.129-129, Article 129

2024

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Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel

Small (Weinheim an der Bergstrasse, Germany), 2014-06, Vol.10 (12), p.2356-2361

2014

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Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions

NPJ 2D materials and applications, 2022-03, Vol.6 (1), p.1-8, Article 23

2022

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Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel

Advanced materials (Weinheim), 2009-02, Vol.21 (6), p.678-682

2009

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Transition Metal Dichalcogenide‐Based Transistor Circuits for Gray Scale Organic Light‐Emitting Displays

Advanced functional materials, 2017-01, Vol.27 (2), p.np-n/a

2017

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Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters

ACS applied materials & interfaces, 2017-05, Vol.9 (18), p.15592-15598

2017

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Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

NPJ 2D materials and applications, 2018-12, Vol.2 (1), Article 37

2018

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Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

Scientific reports, 2016-01, Vol.6 (1), p.18754-18754, Article 18754

2016

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Selective Dispersion of Highly Pure Large-Diameter Semiconducting Carbon Nanotubes by a Flavin for Thin-Film Transistors

ACS applied materials & interfaces, 2016-09, Vol.8 (35), p.23270-23280

2016

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Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

Applied physics letters, 2003-10, Vol.83 (14), p.2946-2948

2003

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Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors

Advanced materials (Weinheim), 2014-01, Vol.26 (2), p.288-292

2014

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Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors

RSC advances, 2018-01, Vol.8 (6), p.2837-2843

2018

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Graphene nanoribbons formed by a sonochemical graphene unzipping using flavin mononucleotide as a template

Carbon (New York), 2015-01, Vol.81, p.629-638

2015

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Charge Transport in 2D DNA Tunnel Junction Diodes

Small (Weinheim an der Bergstrasse, Germany), 2017-12, Vol.13 (48), p.n/a

2017

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Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

Applied physics letters, 2006-08, Vol.89 (9)

2006

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2D WSe2/MoS2 van der Waals heterojunction photodiode for visible-near infrared broadband detection

Ultrafast 27 GHz cutoff frequency in vertical WSe2 Schottky diodes with extremely low contact resistance

ZnO composite nanolayer with mobility edge quantization for multi-value logic transistors

High-Responsivity Multilayer MoSe2 Phototransistors with Fast Response Time

Black Phosphorus–Zinc Oxide Nanomaterial Heterojunction for p–n Diode and Junction Field-Effect Transistor

Homogeneous 2D MoTe2 p–n Junctions and CMOS Inverters formed by Atomic‐Layer‐Deposition‐Induced Doping

Performance enhancement of multilayer MoS2 phototransistors via photoresist encapsulation

Mixed‐Dimensional 1D ZnO–2D WSe2 van der Waals Heterojunction Device for Photosensors

Vertical and In-Plane Current Devices Using NbS2/n-MoS2 van der Waals Schottky Junction and Graphene Contact

Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n‑MoS2 and p‑MoTe2 Transistors

Purely self-rectifying memristor-based passive crossbar array for artificial neural network accelerators

Graphene Versus Ohmic Metal as Source-Drain Electrode for MoS2 Nanosheet Transistor Channel

Engineering MoSe2/MoS2 heterojunction traps in 2D transistors for multilevel memory, multiscale display, and synaptic functions

Transparent and Photo-stable ZnO Thin-film Transistors to Drive an Active Matrix Organic-Light- Emitting-Diode Display Panel

Transition Metal Dichalcogenide‐Based Transistor Circuits for Gray Scale Organic Light‐Emitting Displays

Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters

Van der Waals junction field effect transistors with both n- and p-channel transition metal dichalcogenides

Self-Limiting Layer Synthesis of Transition Metal Dichalcogenides

Selective Dispersion of Highly Pure Large-Diameter Semiconducting Carbon Nanotubes by a Flavin for Thin-Film Transistors

Ultraviolet-enhanced photodiode employing n-ZnO/p-Si structure

Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors

Polymer/oxide bilayer dielectric for hysteresis-minimized 1 V operating 2D TMD transistors

Graphene nanoribbons formed by a sonochemical graphene unzipping using flavin mononucleotide as a template

Charge Transport in 2D DNA Tunnel Junction Diodes

Comparative studies on the stability of polymer versus SiO2 gate dielectrics for pentacene thin-film transistors

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