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The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

Applied physics letters, 2014-02, Vol.104 (7)

2014

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Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Journal of materials chemistry. C, Materials for optical and electronic devices, 2020-01, Vol.8 (31), p.1526-155

2020

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Prospective of Semiconductor Memory Devices: from Memory System to Materials

Advanced electronic materials, 2015-06, Vol.1 (6), p.n/a

Hwang, Cheol Seong

2015

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Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Applied physics letters, 2011-09, Vol.99 (10), p.102103-102103-3

2011

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Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold

Nanotechnology, 2013-09, Vol.24 (38), p.384005-384005

2013

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Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure

Applied physics letters, 2015-08, Vol.107 (7)

2015

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Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

Nanotechnology, 2011-06, Vol.22 (25), p.254002-254002

2011

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Efficient CH3NH3PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition

Advanced materials (Weinheim), 2015-07, Vol.27 (27), p.4013-4019

2015

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Review and perspective on ferroelectric HfO2-based thin films for memory applications

MRS communications, 2018-09, Vol.8 (3), p.795-808

2018

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices

1, 2019

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Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

Applied physics letters, 2011-06, Vol.98 (26)

2011

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Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Applied physics letters, 2012-03, Vol.100 (12), p.123505-123505-4

2012

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Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

Applied physics letters, 2012-08, Vol.101 (9), p.92107

2012

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Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory

Nanoscale, 2019-11, Vol.11 (41), p.19477-19487

2019

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An artificial nociceptor based on a diffusive memristor

Nature communications, 2018-01, Vol.9 (1), p.417-9, Article 417

2018

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Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

Advanced materials (Weinheim), 2015-03, Vol.27 (11), p.1811-1831

2015

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Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Applied physics letters, 2013-06, Vol.102 (24)

2013

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Advanced memory—Materials for a new era of information technology

MRS bulletin, 2018-05, Vol.43 (5), p.330-333

2018

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Optimized Al-doped TiO2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Journal of materials chemistry. C, Materials for optical and electronic devices, 2021-01, Vol.9 (5), p.1572-1583

2021

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Phase control of HfO2-based dielectric films for higher-k materials

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2014-05, Vol.32 (3)

2014

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Resistive switching materials for information processing

Nature reviews. Materials, 2020-03, Vol.5 (3), p.173-195

2020

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Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Nature materials, 2018-01, Vol.17 (1), p.49-56

2018

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Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

Nanoscale, 2017-07, Vol.9 (28), p.9973-9986

2017

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Thin HfxZr1-xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

Advanced energy materials, 2014-11, Vol.4 (16), p.n/a

2014

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The effects of crystallographic orientation and strain of thin Hf0.5Zr0.5O2 film on its ferroelectricity

Evolution of phases and ferroelectric properties of thin Hf0.5Zr0.5O2 films according to the thickness and annealing temperature

Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Prospective of Semiconductor Memory Devices: from Memory System to Materials

Suppression in the negative bias illumination instability of Zn-Sn-O transistor using oxygen plasma treatment

Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold

Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure

Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

Efficient CH3NH3PbI3 Perovskite Solar Cells Employing Nanostructured p-Type NiO Electrode Formed by a Pulsed Laser Deposition

Review and perspective on ferroelectric HfO2-based thin films for memory applications

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices

Improved endurance of resistive switching TiO2 thin film by hourglass shaped Magnéli filaments

Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory

Anomalous behavior of negative bias illumination stress instability in an indium zinc oxide transistor: A cation combinatorial approach

Understanding ferroelectric phase formation in doped HfO2 thin films based on classical nucleation theory

An artificial nociceptor based on a diffusive memristor

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin films

Advanced memory—Materials for a new era of information technology

Optimized Al-doped TiO2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate

Phase control of HfO2-based dielectric films for higher-k materials

Resistive switching materials for information processing

Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories

Surface and grain boundary energy as the key enabler of ferroelectricity in nanoscale hafnia-zirconia: a comparison of model and experiment

Thin HfxZr1-xO2 Films: A New Lead-Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability

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