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Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory

Applied physics letters, 2013-02, Vol.102 (8)

2013

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ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Applied physics letters, 2012-02, Vol.100 (7), p.073502-073502-4

2012

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Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance

Advanced electronic materials, 2022-09, Vol.8 (9), p.n/a

2022

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Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Physical review. B, Condensed matter and materials physics, 2013-04, Vol.87 (15), Article 155201

2013

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Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device

Materials, 2022-03, Vol.15 (7), p.2402

2022

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First principles modeling of charged oxygen vacancy filaments in reduced TiO2–implications to the operation of non-volatile memory devices

Mathematical and computer modelling, 2013-07, Vol.58 (1-2), p.275-281

2013

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Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

Nanotechnology, 2011-06, Vol.22 (25), p.254029-254029

2011

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A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

2012 International Electron Devices Meeting, 2012, p.20.8.1-20.8.4

2012

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First-principles investigation of the conductive filament configuration in rutile TiO2-x ReRAM

MRS proceedings, 2012, Vol.1430 (1), p.155-160

2012

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Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in \hbox for Resistive Switching Memory

IEEE electron device letters, 2011-02, Vol.32 (2), p.197-199

2011

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Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations

MRS proceedings, 2009, Vol.1160 (1)

2009

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First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

Journal of materials science, 2012-11, Vol.47 (21), p.7498-7514

2012

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Physical origins of ON-OFF switching in ReRAM via VO based conducting channels

AIP Conference Proceedings, 2013, Vol.1566 (1), p.12

2013

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Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Electronics (Basel), 2022-09, Vol.11 (19), p.3094

2022

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Electric field dependent switching and degradation of Resistance Random Access Memory

2009 IEEE International Integrated Reliability Workshop Final Report, 2009, p.11-14

2009

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Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance (Adv. Electron. Mater. 9/2022)

Advanced electronic materials, 2022-09, Vol.8 (9), p.n/a

2022

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Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

2013 5th IEEE International Memory Workshop, 2013, p.42-43

2013

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First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices

Mathematical and computer modelling, 2013-07, Vol.58 (1-2), p.275-281

2013

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Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in hbox TiO 2 for Resistive Switching Memory

IEEE electron device letters, 2011-02, Vol.32 (2), p.197-199

2011

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Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in [Formula Omitted] for Resistive Switching Memory

IEEE electron device letters, 2011-02, Vol.32 (2), p.197

2011

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Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in Ti02 for Resistive Switching Memory

IEEE electron device letters, 2011, Vol.32 (2), p.197-199

2011

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Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2230

2005

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Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO 2 , NiO and Pr 0.7 Ca 0.3 MnO 3

Nanotechnology, 2011-06, Vol.22 (25), p.254029

2011

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First-principles investigation of the conductive filament configuration in rutile TiO 2-x ReRAM

MRS proceedings, 2012, Vol.1430, Article mrss12-1430-e09-15

2012

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Lattice and electronic effects in rutile TiO 2 containing charged oxygen defects from ab initio calculations

MRS proceedings, 2009, Vol.1160, Article 1160-H11-11

2009

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Dopant selection rules for desired electronic structure and vacancy formation characteristics of TiO2 resistive memory

ON-OFF switching mechanism of resistive-random-access-memories based on the formation and disruption of oxygen vacancy conducting channels

Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance

Generalized mechanism of the resistance switching in binary-oxide-based resistive random-access memories

Quad-Level Cell Switching with Excellent Reliability in TiN/AlOx:Ti/TaOx/TiN Memory Device

First principles modeling of charged oxygen vacancy filaments in reduced TiO2–implications to the operation of non-volatile memory devices

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3

A non-linear ReRAM cell with sub-1μA ultralow operating current for high density vertical resistive memory (VRRAM)

First-principles investigation of the conductive filament configuration in rutile TiO2-x ReRAM

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in \hbox for Resistive Switching Memory

Lattice and electronic effects in rutile TiO2 containing charged oxygen defects from ab initio calculations

First principles calculations of oxygen vacancy-ordering effects in resistance change memory materials incorporating binary transition metal oxides

Physical origins of ON-OFF switching in ReRAM via VO based conducting channels

Microwave-Assisted Annealing Method for Low-Temperature Fabrication of Amorphous Indium-Gallium-Zinc Oxide Thin-Film Transistors

Electric field dependent switching and degradation of Resistance Random Access Memory

Material and Structural Engineering of Ovonic Threshold Switch for Highly Reliable Performance (Adv. Electron. Mater. 9/2022)

Highly reliable ReRAM technology with encapsulation process for 20nm and beyond

First principles modeling of charged oxygen vacancy filaments in reduced TiO 2 –implications to the operation of non-volatile memory devices

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in hbox TiO 2 for Resistive Switching Memory

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in [Formula Omitted] for Resistive Switching Memory

Impact of Oxygen Vacancy Ordering on the Formation of a Conductive Filament in Ti02 for Resistive Switching Memory

Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO 2 , NiO and Pr 0.7 Ca 0.3 MnO 3

First-principles investigation of the conductive filament configuration in rutile TiO 2-x ReRAM

Lattice and electronic effects in rutile TiO 2 containing charged oxygen defects from ab initio calculations

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