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Low-k Si–O–C–H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2000-07, Vol.18 (4), p.1216-1219

2000

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Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Current Applied Physics, 2011, 11(3), , pp.280-285

2011

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Reliability issue of 20 nm MLC NAND Flash

2013 IEEE International Reliability Physics Symposium (IRPS), 2013, p.3B.2.1-3B.2.4

2013

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Novel Negative $Vt$ Shift Phenomenon of Program-Inhibit Cell in $\hbox{2}X{-}\hbox{3}X\hbox{-}\hbox{nm}$ Self-Aligned STI nand Flash Memory

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2950-2955

2012

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A highly manufacturable integration technology of 20nm generation 64Gb multi-level NAND flash memory

2011 Symposium on VLSI Technology - Digest of Technical Papers, 2011, p.70-71

2011

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Optimization of control gate material and structure for enhancing 20nm 64Gb NAND flash reliability

Proceedings of Technical Program of 2012 VLSI Technology, System and Application, 2012, p.1-2

2012

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Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory

Japanese Journal of Applied Physics, 2008-01, Vol.47 (1R), p.80

2008

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Selective silicon growth on nitride for silicon-plugging process in LPCVD

Journal of crystal growth, 2003-07, Vol.254 (3), p.329-335

2003

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Selective epitaxial growth for plugs of high-density devices

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-05, Vol.21 (3), p.975-980

2003

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Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Current applied physics, 2011-05, p.280-285

2011

Volltextzugriff (PDF)

Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in 2X-3X-nm Self-Aligned STI NAND Flash Memory

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2950-2955

2012

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Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition

Journal of the Korean Physical Society, 2000-12, Vol.37 (6), p.1040

2000

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Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory

2007 22nd IEEE Non-Volatile Semiconductor Memory Workshop, 2007, p.83-84

2007

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A two-dimensional DNA lattice implanted polymer solar cell

Nanotechnology, 2011-09, Vol.22 (37), p.375202-1-6

2011

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A Novel 3D Cell Array Architecture for Terra-Bit NAND Flash Memory

2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-4

2011

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Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in hbox 2 X - hbox 3 X hbox - hbox nm Self-Aligned STI nand Flash Memory

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2950-2955

2012

Volltextzugriff (PDF)

Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2950-2955

2012

Volltextzugriff (PDF)

Novel Negative [Formula Omitted] Shift Phenomenon of Program-Inhibit Cell in [Formula Omitted] Self-Aligned STI nand Flash Memory

IEEE transactions on electron devices, 2012-11, Vol.59 (11), p.2950

2012

Volltextzugriff (PDF)

Chip Level Reliability of MANOS Cells under Operating Conditions

2009 IEEE International Memory Workshop, 2009, p.1-2

2009

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Lower sheet/contact resistance in shallower junction obtained by F+B mixed implant

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2002-01, Vol.20 (1), p.396-399

2002

Volltextzugriff (PDF)

Effect of laser annealing on delta-doped boron for super-steep-retrograded well formation using selective Si epitaxy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-05, Vol.21 (3), p.936-941

2003

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Modeling and optimization of the chip level program disturbance of 3D NAND Flash memory

2013 5th IEEE International Memory Workshop, 2013, p.147-150

2013

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Novel oxynitridation technology for highly reliable thin dielectrics

1995 Symposium on VLSI Technology. Digest of Technical Papers, 1995, p.107-108

1995

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Low-k Si–O–C–H composite films prepared by plasma-enhanced chemical vapor deposition using bis-trimethylsilylmethane precursor

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Reliability issue of 20 nm MLC NAND Flash

Novel Negative $Vt$ Shift Phenomenon of Program-Inhibit Cell in $\hbox{2}X{-}\hbox{3}X\hbox{-}\hbox{nm}$ Self-Aligned STI nand Flash Memory

A highly manufacturable integration technology of 20nm generation 64Gb multi-level NAND flash memory

Optimization of control gate material and structure for enhancing 20nm 64Gb NAND flash reliability

Gate Annealing of Cycling Endurance and Interface States for Highly Reliable Flash Memory

Selective silicon growth on nitride for silicon-plugging process in LPCVD

Selective epitaxial growth for plugs of high-density devices

Effects of UV light and carbon nanotube dopant on solution-based indium gallium zinc oxide thin-film transistors

Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in 2X-3X-nm Self-Aligned STI NAND Flash Memory

Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition

Modeling and Characterization of Program / Erasure Speed and Retention of TiN-gate MANOS (Si-Oxide-SiNx-Al2O3-Metal Gate) Cells for NAND Flash Memory

A two-dimensional DNA lattice implanted polymer solar cell

A Novel 3D Cell Array Architecture for Terra-Bit NAND Flash Memory

Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in hbox 2 X - hbox 3 X hbox - hbox nm Self-Aligned STI nand Flash Memory

Novel Negative Vt Shift Phenomenon of Program-Inhibit Cell in \hboxX\hboxX\hbox\hbox Self-Aligned STI nand Flash Memory

Novel Negative [Formula Omitted] Shift Phenomenon of Program-Inhibit Cell in [Formula Omitted] Self-Aligned STI nand Flash Memory

Chip Level Reliability of MANOS Cells under Operating Conditions

Lower sheet/contact resistance in shallower junction obtained by F+B mixed implant

Effect of laser annealing on delta-doped boron for super-steep-retrograded well formation using selective Si epitaxy

Modeling and optimization of the chip level program disturbance of 3D NAND Flash memory

Novel oxynitridation technology for highly reliable thin dielectrics

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