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Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics

Electronics (Basel), 2024-03, Vol.13 (5), p.962

2024

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High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2

IEEE electron device letters, 2014-02, Vol.35 (2), p.175-177

2014

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Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation

Japanese Journal of Applied Physics, 2021-06, Vol.60 (SC), p.SCCE08

2021

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Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions

Japanese Journal of Applied Physics, 2021-06, Vol.60 (SC), p.SCCE01

2021

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Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.11001

2023

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Chip packaging interaction of SiC junction barrier Schottky diode packages

Energy reports, 2023-06, Vol.9, p.65-77

2023

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Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

Electronics (Basel), 2024-04, Vol.13 (7), p.1352

2024

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1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect

Japanese Journal of Applied Physics, 2023-11, Vol.62 (11), p.114001

2023

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The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Micromachines (Basel), 2024-04, Vol.15 (4), p.496

2024

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Effect of P+ Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance

Applied sciences, 2023-01, Vol.13 (1), p.107

2023

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Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Applied sciences, 2021-12, Vol.11 (24), p.12075

2021

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Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Japanese Journal of Applied Physics, 2017-12, Vol.56 (12), p.120305

2017

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Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

Micromachines (Basel), 2020-06, Vol.11 (6), p.598

2020

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High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Semiconductor science and technology, 2013-02, Vol.28 (2)

2013

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Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications

Electronics (Basel), 2020-02, Vol.9 (2), p.332

2020

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6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(2), 98, pp.119-125

2021

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High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing

Journal of crystal growth, 2013-09, Vol.378, p.600-603

2013

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High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- /RF-Sputtered

IEEE electron device letters, 2014-02, Vol.35 (2), p.175-177

2014

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Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

Journal of the Korean Physical Society, 2017, 71(10), , pp.707-710

2017

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Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate

Journal of Electrical Engineering & Technology, 2018, 13(1), , pp.387-392

2018

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High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment

Solid-state electronics, 2015-01, Vol.103, p.49-53

2015

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New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3 Stacks

Jpn J Appl Phys, 2012-10, Vol.51 (10), p.101001-101001-4

2012

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Micro-trench free 4H-SiC etching with improved SiC/SiO 2 selectivity using inductively coupled SF 6 /O 2 /Ar plasma

Physica scripta, 2020-04, Vol.95 (4), p.45606

2020

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High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation

Journal of Electrical Engineering & Technology, 2013, 8(5), , pp.1157-1162

2013

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High-Voltage Schottky Barrier Diode on Silicon Substrate

Japanese Journal of Applied Physics, 2011-06, Vol.50 (6), p.06GF17-06GF17-4

2011

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Design of a 1.2 kV SiC MOSFET with Buried Oxide for Improving Switching Characteristics

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-SiNx/RF-Sputtered-HfO2

Effects of incomplete ionization on forward current–voltage characteristics of p-type diamond Schottky barrier diodes based on numerical simulation

Multi-floating-zone JTE for 4.5 kV SiC power devices with exponentially modulated dimensions

Design of 1.2 kV SiC trench MOSFET using tilted ion implantation for suppression of electric field crowding at the bottom of the gate oxide

Chip packaging interaction of SiC junction barrier Schottky diode packages

Comparison Analysis of Radiation Effects on 1.2 kV SiC Metal-Oxide-Semiconductor Field-Effect Transistors with Gamma-Ray and Proton Irradiation

1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect

The Effects of a Gate Bias Condition on 1.2 kV SiC MOSFETs during Irradiating Gamma-Radiation

Effect of P+ Source Pattern in 4H-SiC Trench-Gate MOSFETs on Low Specific On-Resistance

Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer

Mobility Models Based on Forward Current-Voltage Characteristics of P-type Pseudo-Vertical Diamond Schottky Barrier Diodes

High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators

Gate Current and Snapback of 4H-SiC Thyristors on N+ Substrate for Power-Switching Applications

6.5 kV SiC Power Devices with Improved Blocking Characteristics against Process Deviations

High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing

High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD- /RF-Sputtered

Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate

High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment

New AlGaN/GaN High Electron Mobility Transistors Employing Charge Accumulation in Multiple Al2O3/Ga2O3 Stacks

Micro-trench free 4H-SiC etching with improved SiC/SiO 2 selectivity using inductively coupled SF 6 /O 2 /Ar plasma

High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation

High-Voltage Schottky Barrier Diode on Silicon Substrate

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