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Digest of Papers. Microprocesses and Nanotechnology 2001. 2001 International Microprocesses and Nanotechnology Conference (IEEE Cat. No.01EX468), 2001, p.216-217

2001

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IEEE_Xplore

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

Applied physics letters, 2015-11, Vol.107 (19)

2015

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Orientation-controlled assembly and solvothermal ion-exchange of layered double hydroxide nanocrystals

Chemical communications (Cambridge, England), 2003-11 (21), p.2740-2741

2003

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Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits

Applied physics letters, 2014-01, Vol.104 (2)

2014

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Frequency shifts in two-level ultra-deep reactive ion etched slow-wave structures for 0.1 THz backward-wave oscillations

Applied physics letters, 2012-08, Vol.101 (7), p.73508

2012

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Sub-terahertz slow-wave circuits for coherent radiation sources

2016 URSI Asia-Pacific Radio Science Conference (URSI AP-RASC), 2016, p.963-966

2016

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Experimental measurement of W-band backward-wave amplification driven by external pulsed signals

2013 IEEE 14th International Vacuum Electronics Conference (IVEC), 2013, p.1-2

2013

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IEEE_Xplore

Enhanced RF performance in multi-tunnel backward-wave oscillators

IEEE International Vacuum Electronics Conference, 2014, p.67-68

2014

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IEEE_Xplore

A fully integrated MEMS tera hertz interaction circuit with multi wafer packaging

2013 Transducers & Eurosensors XXVII: The 17th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS & EUROSENSORS XXVII), 2013, p.826-829

2013

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Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Leakage current improvement of nitride-based light emitting diodes using CrN buffer layer and its vertical type application by chemical lift-off process

Effects of Basal Stacking Faults on Electrical Anisotropy of Nonpolar a-Plane ( 11\bar0 ) GaN Light-Emitting Diodes on Sapphire Substrate

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light-emitting Diodes on r-plane Sapphire Substrates

Corrigendum: Local stress distribution in GaN vertical light-emitting diodes fabricated using CLO and LLO methods

Experimental verification of effects of barrier dopings on the internal electric fields and the band structure in InGaN/GaN light emitting diodes

Leakage current improvement of nitride-based light emitting diodesusing CrN buffer layer and its vertical type application by chemicallift-off process

Structural and stimulated emission characteristics of diameter-controlled ZnO nanowires using buffer structure

Free-standing GaN substrates fabricated by a combination of substrate fracturing and chemical lift-off

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light-emitting Diodes on r-plane Sapphire Substrates

Novel buffer layer for the growth of GaN on c-sapphire

Effect of Refined Nitridation of Sapphire Substrates in Hydride Vapor Phase Epitaxy: Definite Correlation of Structural Characteristics between a Low-Temperature-Grown Buffer Layer and a Subsequent High-Temperature-Grown Layer of GaN

Device Performance of Nonpolar a-plane (11-20) InGaN/GaN Light Emitting Diode on r-plane Sapphire Substrates

Structural Investigation of GaN Nanograins Nucleated on a Sapphire Substrate

Selective growth of vertically-aligned ZnO nano-needles

The surface treatment with NH/sub 3/ for GaN grown by a sublimation technique

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

Orientation-controlled assembly and solvothermal ion-exchange of layered double hydroxide nanocrystals

Dispersion retrieval from multi-level ultra-deep reactive-ion-etched microstructures for terahertz slow-wave circuits

Frequency shifts in two-level ultra-deep reactive ion etched slow-wave structures for 0.1 THz backward-wave oscillations

Sub-terahertz slow-wave circuits for coherent radiation sources

Experimental measurement of W-band backward-wave amplification driven by external pulsed signals

Enhanced RF performance in multi-tunnel backward-wave oscillators

A fully integrated MEMS tera hertz interaction circuit with multi wafer packaging

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