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Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

Carbon (New York), 2020-04, Vol.159, p.229-235

2020

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Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC(0001): graphene doping and substrate band bending

New journal of physics, 2015-08, Vol.17 (8), p.83058

2015

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Increased Stability of Subsurface C Induced by Ca on the C-Incorporated Si(001)-4°-off Substrate

Journal of the Korean Physical Society, 2020, 76(11), , pp.991-1000

2020

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Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-xGex intercalation

Carbon (New York), 2019-04, Vol.144, p.549-556

2019

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Sn-induced 1D nanostructure formed on Si(5 5 12)-2  ×  1: Faceting followed by preferential adsorption

Surface science, 2019-10, Vol.688, p.69-77

2019

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Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

Journal of physics. D, Applied physics, 2016-04, Vol.49 (13), p.135307-135313

2016

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Novel (115) faceting induced by Sr adsorbed on Si(114)-2×1 with subsurface C

Surface science, 2016-09, Vol.651, p.203-209

2016

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Ca-induced structural transformation of the single-domain Si(001) surface: CaF2/Si(001)-4° off

Surface science, 2014-05, Vol.623, p.64-71

2014

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Nucleation, growth, and deformation of one-dimensional Ge nanostructures on the Si(5 5 12)-2 X 1 surface

Surface science, 2008-07, Vol.602 (14), p.2563-2574

2008

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Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2×1: Tensile stress induced by substrate chain structures

Surface science, 2012-04, Vol.606 (7-8), p.744-748

2012

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Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template

Surface science, 2012-10, Vol.606 (19-20), p.1512-1519

2012

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Cyclic transformation of one-dimensional structures during homoepitaxy of Si(5 5 12)-2 × 1

Surface science, 2005-06, Vol.583 (2), p.265-280

2005

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Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation

Applied surface science, 2024-06, Vol.657, p.159768, Article 159768

2024

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Growth of a crystalline and ultrathin MgO film on Fe(001)

AIP advances, 2011-09, Vol.1 (3), p.032156-032156-5

2011

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Atomic structure of Bi-dimer row selectively adsorbed on Si(5 5 12)-2 × 1 surface

Surface science, 2004-09, Vol.565 (1), p.14-26

2004

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Stress-driven structural transformation of Sb-passivated Si(114)

Surface science, 2012-02, Vol.606 (3-4), p.312-319

2012

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Atomic structure of the Si(5512)-2 x 1 surface

Surface science, 2007-04, Vol.601 (8), p.1831-1835

2007

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Initial Ag adsorption on Si(5 5 12)-2 × 1 and its parasitic Si(7 7 17)-2 × 1

Surface science, 2020-03, Vol.693, p.121547, Article 121547

2020

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Metrological orientation-confirmation of Si(hhk) using scanning tunneling microscopy

Applied surface science, 2011-03, Vol.257 (10), p.4603-4607

2011

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Irreversible structural transformation of Si(1 1 4)-2 x 1 induced by subsurface carbon

Surface science, 2009-08, Vol.603 (15), p.2312-2317

2009

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Growth mechanism of isolated indium nanowires formed on Si(5 5 12)-2 × 1 templates

Journal of the Korean Physical Society, 2012, 61(3), , pp.406-409

2012

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Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-Ge intercalation

Carbon (New York), 2019-04, Vol.144, p.549-556

2019

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Origin of ambipolar graphene doping induced by the ordered Ge film intercalated on SiC(0001)

Carbon (New York), 2016-11, Vol.108, p.154-164

2016

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SiGe-intercalated graphene on SiC(0001): Interfacial structures and graphene doping depending on coverage and composition ratio of the alloy

Applied surface science, 2023-02, Vol.611, p.155658, Article 155658

2023

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Sn-induced c(4×4) reconstruction on the C-incorporated Si(001)-4∘ off surface

Surface science, 2023-04, Vol.730, p.122236, Article 122236

2023

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Effects of two kinds of intercalated In films on quasi-free-standing monolayer graphene formed above SiC(0001)

Bifunctional effects of the ordered Si atoms intercalated between quasi-free-standing epitaxial graphene and SiC(0001): graphene doping and substrate band bending

Increased Stability of Subsurface C Induced by Ca on the C-Incorporated Si(001)-4°-off Substrate

Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-xGex intercalation

Sn-induced 1D nanostructure formed on Si(5 5 12)-2  ×  1: Faceting followed by preferential adsorption

Charge neutrality of quasi-free-standing monolayer graphene induced by the intercalated Sn layer

Novel (115) faceting induced by Sr adsorbed on Si(114)-2×1 with subsurface C

Ca-induced structural transformation of the single-domain Si(001) surface: CaF2/Si(001)-4° off

Nucleation, growth, and deformation of one-dimensional Ge nanostructures on the Si(5 5 12)-2 X 1 surface

Origin of enhanced Ge interdiffusion at the initial stage of Ge deposition on Si(5 5 12)-2×1: Tensile stress induced by substrate chain structures

Self-limited growth of the CaF nanowire on the Si(5 5 12)-2×1 template

Cyclic transformation of one-dimensional structures during homoepitaxy of Si(5 5 12)-2 × 1

Crater-free monolayer graphene above the 2D Si film on SiC(0001) formed via SiSn cointercalation and Sn deintercalation

Growth of a crystalline and ultrathin MgO film on Fe(001)

Atomic structure of Bi-dimer row selectively adsorbed on Si(5 5 12)-2 × 1 surface

Stress-driven structural transformation of Sb-passivated Si(114)

Atomic structure of the Si(5512)-2 x 1 surface

Initial Ag adsorption on Si(5 5 12)-2 × 1 and its parasitic Si(7 7 17)-2 × 1

Metrological orientation-confirmation of Si(hhk) using scanning tunneling microscopy

Irreversible structural transformation of Si(1 1 4)-2 x 1 induced by subsurface carbon

Growth mechanism of isolated indium nanowires formed on Si(5 5 12)-2 × 1 templates

Doping modulation of quasi-free-standing monolayer graphene formed on SiC(0001) through Sn1-Ge intercalation

Origin of ambipolar graphene doping induced by the ordered Ge film intercalated on SiC(0001)

SiGe-intercalated graphene on SiC(0001): Interfacial structures and graphene doping depending on coverage and composition ratio of the alloy

Sn-induced c(4×4) reconstruction on the C-incorporated Si(001)-4∘ off surface

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