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Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(6), 102, pp.381-389

2021

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Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2022, 22(2), 104, pp.105-114

2022

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Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(6), 102, pp.398-405

2021

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AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

IEEE electron device letters, 2015-10, Vol.36 (10), p.1008-1010

2015

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Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I - V Characteristic for Switching Applications

IEEE electron device letters, 2016-07, Vol.37 (7), p.855-858

2016

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InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

IEICE transactions on electronics, 2014, Vol.E97.C (7), p.677-682

2014

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Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor

Japanese Journal of Applied Physics, 2017-06, Vol.56 (6S1), p.6

2017

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Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

Materials, 2022-01, Vol.15 (3), p.819

2022

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Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

IEEE access, 2020, Vol.8, p.139156-139160

2020

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TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Solid-state electronics, 2016-10, Vol.124, p.54-57

2016

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Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)

Journal of science. Advanced materials and devices, 2024-09, Vol.9 (3), p.100765, Article 100765

2024

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Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

IEEE access, 2021, Vol.9, p.50281-50290

2021

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Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)

Current Applied Physics, 2015, 15(3), , pp.208-212

2015

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Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Current Applied Physics, 2013, 13(6), , pp.1143-1149

2013

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Performance comparison between p-i-n and p-n junction tunneling field-effect transistors

Japanese Journal of Applied Physics, 2018-06, Vol.57 (6S1), p.6

2018

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Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

IEEE access, 2021, Vol.9, p.163675-163685

2021

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Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer

Semiconductor science and technology, 2013-10, Vol.28 (10), p.105007

2013

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Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

Nanomaterials (Basel, Switzerland), 2022-10, Vol.12 (19), p.3526

2022

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Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Microelectronic engineering, 2015-11, Vol.147, p.155-158

2015

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Design and Analysis of DC/DC Boost Converter Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire

Journal of semiconductor technology and science, 2021-12, Vol.21 (6), p.390-397

2021

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Design and Analysis of DC/DC Boost Converter using Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2021, 21(6), 102, pp.390-397

2021

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Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer

Current Applied Physics, 2016, 16(7), , pp.681-685

2016

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Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors

Japanese Journal of Applied Physics, 2016-06, Vol.55 (6S1), p.6-06GG02

2016

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InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V

Current Applied Physics, 2013, 13(9), , pp.2051-2054

2013

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Design and Analysis of AlGaN/GaN MIS HEMTs with a Dual-metal-gate Structure

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2017, 17(2), 74, pp.223-229

2017

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Effect of Work-function Variation on Transfer Characteristics and Memory Performances for Gate-all-around JLFET based Capacitorless DRAM

Fabrication and Performances of Recessed Gate AlGaN/GaN MOSFETs with Si₃N₄/TiO₂ Stacked Dual Gate Dielectric

Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure

AlGaN/GaN FinFET With Extremely Broad Transconductance by Side-Wall Wet Etch

Al(In)N/GaN Fin-Type HEMT With Very-Low Leakage Current and Enhanced I - V Characteristic for Switching Applications

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

Capacitorless one-transistor dynamic random access memory based on double-gate GaAs junctionless transistor

Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance

TMAH-based wet surface pre-treatment for reduction of leakage current in AlGaN/GaN MIS-HEMTs

Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)

Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances

Design and analysis of Si-based arch-shaped gate-all-around (GAA) tunneling field-effect transistor (TFET)

Simulation study on effect of drain underlap in gate-all-around tunneling field-effect transistors

Performance comparison between p-i-n and p-n junction tunneling field-effect transistors

Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure

Simulation for silicon-compatible InGaAs-based junctionless field-effect transistor using InP buffer layer

Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure

Effects of sidewall MOS channel on performance of AlGaN/GaN FinFET

Design and Analysis of DC/DC Boost Converter Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire

Design and Analysis of DC/DC Boost Converter using Vertical GaN Power Device based on Epitaxially Grown GaN-on-sapphire

Design optimization of vertical nanowire tunneling field-effect transistor based on AlGaSb/InGaAs heterojunction layer

Effects of dual-spacer dielectrics on low-power and high-speed performance of sub-10 nm tunneling field-effect transistors

InGaAs/InP heterojunction-channel tunneling field-effect transistor for ultra-low operating and standby power application below supply voltage of 0.5 V

Design and Analysis of AlGaN/GaN MIS HEMTs with a Dual-metal-gate Structure

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