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Atomic Layer Deposition of LaOx and LaAlOx Thin Films Using Direct Liquid Injection of Lanthanum Sources

ECS transactions, 2010, Vol.33 (2), p.411-416

2010

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Highly Conformal ALD of ZrO 2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process

ECS transactions, 2009-09, Vol.25 (4), p.201-207

2009

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Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics: Precursor delivery, Materials and Processes

ECS transactions, 2009, Vol.16 (4), p.125-134

2009

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(Invited) Innovative Deposition Technology for Advanced Materials

ECS transactions, 2010, Vol.28 (1), p.137-144

2010

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Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

ECS transactions, 2007-07, Vol.3 (15), p.37-49

2007

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Nitridation of Hafnium Silicate Thin Films

MRS proceedings, 2004, Vol.811, Article D7.5

2004

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Atomic Layer Deposited HfO 2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability

ECS transactions, 2006-07, Vol.1 (10), p.15-28

2006

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An Advanced High-k Transistor Utilizing Metal-Organic Precursors in an ALD Deposition of Hafnium Oxide and Hafnium Silicate with Ozone as Oxidizer

MRS proceedings, 2004, Vol.811, Article D2.4

2004

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Atomic Layer Deposition of LaOx and LaAlOx Using Direct Liquid Injection of Lanthanum Sources

Meeting abstracts (Electrochemical Society), 2010-07, Vol.MA2010-02 (20), p.1433-1433

2010

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Highly Conformal ALD of ZrO 2 at Higher Process Temperatures than the Conventional TEMAZr-Based Process

Meeting abstracts (Electrochemical Society), 2009-07, Vol.MA2009-02 (23), p.2030-2030

2009

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Atomic Vapor Deposition and Atomic Layer Deposition of High-k and Electrode Materials

Meeting abstracts (Electrochemical Society), 2010-02, Vol.MA2010-01 (17), p.929-929

2010

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Atomic level solutions® for advanced microelectronic applications

2008 9th International Conference on Solid-State and Integrated-Circuit Technology, 2008, p.1308-1311

2008

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Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics : Precursor delivery, Materials and Processes

Meeting abstracts (Electrochemical Society), 2008-08, Vol.MA2008-02 (24), p.1889-1889

2008

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Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

Meeting abstracts (Electrochemical Society), 2006-06, Vol.MA2006-02 (21), p.1063-1063

2006

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ALD of Advanced High-k and Metal Gate Stacks for MOS Devices

Meeting abstracts (Electrochemical Society), 2006-02, Vol.MA2005-01 (14), p.639-639

2006

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Technology and Reliability Challenges of Sub-nm High EOT High-k/ Metal Gate Electrode Transistors

Meeting abstracts (Electrochemical Society), 2006-02, Vol.MA2005-01 (8), p.391-391

2006

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Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-05, Vol.23 (3), p.L1-L3

2005

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Batch process for atomic layer deposition of hafnium silicate thin filmson 300-mm-diameter silicon substrates

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 2005-04, Vol.23 (3), p.L1-L3

2005

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Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization

MRS proceedings, 2004, Vol.811

2004

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Ozone-Based Atomic Layer Deposition of HfO 2 and Hf x Si 1-x O 2 and Film Characterization

MRS proceedings, 2004, Vol.811, Article D7.4

2004

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Atomic layer deposition of high-k thin films for gate and capacitor dielectrics

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866), 2004, p.269-274

2004

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Atomic Layer Deposition of LaOx and LaAlOx Thin Films Using Direct Liquid Injection of Lanthanum Sources

Highly Conformal ALD of ZrO 2 at Higher Process Temperatures than the Conventinal TEMAZr-Based Process

Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics: Precursor delivery, Materials and Processes

(Invited) Innovative Deposition Technology for Advanced Materials

Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

Nitridation of Hafnium Silicate Thin Films

Atomic Layer Deposited HfO 2 and HfSiO to Enable CMOS Gate Dielectric Scaling, Mobility, and VTH Stability

An Advanced High-k Transistor Utilizing Metal-Organic Precursors in an ALD Deposition of Hafnium Oxide and Hafnium Silicate with Ozone as Oxidizer

Atomic Layer Deposition of LaOx and LaAlOx Using Direct Liquid Injection of Lanthanum Sources

Highly Conformal ALD of ZrO 2 at Higher Process Temperatures than the Conventional TEMAZr-Based Process

Atomic Vapor Deposition and Atomic Layer Deposition of High-k and Electrode Materials

Atomic level solutions® for advanced microelectronic applications

Advances in ALD Equipment for sub-40nm Memory Capacitor Dielectrics : Precursor delivery, Materials and Processes

Comparison of ALD of HfO2, SiO2, and HfSiOx Thin Films Using Various Metal/Silicon Alkylamide Precursors and O3

ALD of Advanced High-k and Metal Gate Stacks for MOS Devices

Technology and Reliability Challenges of Sub-nm High EOT High-k/ Metal Gate Electrode Transistors

Batch process for atomic layer deposition of hafnium silicate thin films on 300-mm-diameter silicon substrates

Batch process for atomic layer deposition of hafnium silicate thin filmson 300-mm-diameter silicon substrates

Ozone-Based Atomic Layer Deposition of HfO2 and HfxSi1-xO2 and Film Characterization

Ozone-Based Atomic Layer Deposition of HfO 2 and Hf x Si 1-x O 2 and Film Characterization

Atomic layer deposition of high-k thin films for gate and capacitor dielectrics

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