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Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

Journal of applied physics, 2016-10, Vol.120 (14)

2016

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Compositional Inhomogeneity in AlGaN Multiple Quantum Wells Grown by Molecular Beam Epitaxy: Effect on Ultraviolet Light-Emitting Diodes

Journal of electronic materials, 2021-06, Vol.50 (6), p.3447-3454

2021

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Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures

AIP advances, 2021-08, Vol.11 (8), p.085109-085109-5

2021

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Wavelength-switchable ultraviolet light-emitting diodes

Optics letters, 2023-06, Vol.48 (11), p.3099-3102

2023

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THE POLITICAL ECONOMY IN INDIA: 1951-1991

International journal of advanced research (Indore), 2018-04, Vol.6 (4), p.697-708

Sen, Sayantani

2018

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Growth of AlGaN alloys with ∼ 90 % AlN mole fraction by plasma-assisted molecular beam epitaxy: Indication of phase-segregation effects

Journal of crystal growth, 2024-09, Vol.642, p.127792, Article 127792

2024

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Mg and Al doped ZnO thin film: Photoinduced “oxygen breathing” under UV illumination

Thin solid films, 2018-09, Vol.662, p.54-59

2018

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GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

Thin solid films, 2020-09, Vol.709, p.138216, Article 138216

2020

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Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-01, Vol.38 (1)

2020

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Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods

Journal of crystal growth, 2018-01, Vol.481, p.40-47

2018

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Mg and Al co-doping of ZnO thin films: Effect on ultraviolet photoconductivity

Materials science in semiconductor processing, 2016-11, Vol.54, p.36-41

2016

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AlGaN multiple quantum wells by PA-MBE for deep UV emission: Effect of growth interruptions

Journal of crystal growth, 2019-10, Vol.523, p.125159, Article 125159

2019

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Controlling the compositional inhomogeneities in AlxGa1−xN/AlyGa1−yN MQWs grown by PA-MBE: Effect on luminescence properties

Journal of crystal growth, 2016-04, Vol.439, p.60-65

2016

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Wavelength-Specific Ultraviolet Photodetectors Based on AlGaN Multiple Quantum Wells

IEEE journal of quantum electronics, 2016-03, Vol.52 (3), p.1-6

2016

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Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn 0.97 Ga 0.03 )(O 0.95 N 0.05 ) solid solution

RSC advances, 2016, Vol.6 (105), p.103081-103087

2016

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Spontaneous growth of III-nitride 1D and 0D nanostructures on to vertical nanorod arrays

Materials research express, 2019-09, Vol.6 (10), p.1050

2019

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A simple method to overcome the limitation of hybrid monochromator in the identification of peaks in the HRXRD pattern of Al0.4Ga0.6N/Al0.6Ga0.4N multi quantum wells

Materials science & engineering. B, Solid-state materials for advanced technology, 2019-01, Vol.240, p.92-96

2019

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India’s ‘Act-East’ Responses to the Strategic Realities in the Indo-Pacific Region: A Review

ijpmonline, 2023-06, Vol.2 (1), p.26-30

Sayantani Sen Majumdar

2023

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Correction: Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn0.97Ga0.03)(O0.95N0.05) solid solution

RSC advances, 2016-11, Vol.6 (19), p.1778-1778

2016

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VLS-grown diffusion doped ZnO nanowires and their luminescence properties

Materials research express, 2015-07, Vol.2 (7), p.75007

2015

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Bioelectronics at graphene–biofilm interface: Schottky junction formation and capacitive transitions

Medical devices & sensors, 2018-06, Vol.1 (3)

2018

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Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn0.97Ga0.03)(O0.95N0.05) solid solutionElectronic supplementary information (ESI) available. See DOI: 10.1039/c6ra21078c

2016-10

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India's Littoral Strategy in the Indo-Pacific Region: Partnership and Beyond

Contiguity, Connectivity and Access, 2023, p.109-122

1, 2023

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Unravelling history and undermining law through politics: The erosion of diversity protection and emerging existential threats to India and China

Affirmative Action and the Law, 2021, p.39-57

1, 2021

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Relevance of Myanmar in Silk Route Resurgence

The Southern SILK ROUTE, 2019, p.197-211

1, 2019

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Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

Compositional Inhomogeneity in AlGaN Multiple Quantum Wells Grown by Molecular Beam Epitaxy: Effect on Ultraviolet Light-Emitting Diodes

Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures

Wavelength-switchable ultraviolet light-emitting diodes

THE POLITICAL ECONOMY IN INDIA: 1951-1991

Growth of AlGaN alloys with ∼ 90 % AlN mole fraction by plasma-assisted molecular beam epitaxy: Indication of phase-segregation effects

Mg and Al doped ZnO thin film: Photoinduced “oxygen breathing” under UV illumination

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

Monitoring the growth of III-nitride materials by plasma assisted molecular beam epitaxy employing diffuse scattering of RHEED

Growth of AlGaN alloys under excess group III conditions: Formation of vertical nanorods

Mg and Al co-doping of ZnO thin films: Effect on ultraviolet photoconductivity

AlGaN multiple quantum wells by PA-MBE for deep UV emission: Effect of growth interruptions

Controlling the compositional inhomogeneities in AlxGa1−xN/AlyGa1−yN MQWs grown by PA-MBE: Effect on luminescence properties

Wavelength-Specific Ultraviolet Photodetectors Based on AlGaN Multiple Quantum Wells

Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn 0.97 Ga 0.03 )(O 0.95 N 0.05 ) solid solution

Spontaneous growth of III-nitride 1D and 0D nanostructures on to vertical nanorod arrays

A simple method to overcome the limitation of hybrid monochromator in the identification of peaks in the HRXRD pattern of Al0.4Ga0.6N/Al0.6Ga0.4N multi quantum wells

India’s ‘Act-East’ Responses to the Strategic Realities in the Indo-Pacific Region: A Review

Correction: Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn0.97Ga0.03)(O0.95N0.05) solid solution

VLS-grown diffusion doped ZnO nanowires and their luminescence properties

Bioelectronics at graphene–biofilm interface: Schottky junction formation and capacitive transitions

Anomalous red emission with competition and coexistence of defect and band edge emission in photo-electrochemically active (Zn0.97Ga0.03)(O0.95N0.05) solid solutionElectronic supplementary information (ESI) available. See DOI: 10.1039/c6ra21078c

India's Littoral Strategy in the Indo-Pacific Region: Partnership and Beyond

Unravelling history and undermining law through politics: The erosion of diversity protection and emerging existential threats to India and China

Relevance of Myanmar in Silk Route Resurgence

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