UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Semiconductors (Woodbury, N.Y.), 2019-09, Vol.53 (9), p.1143-1147

2019

Volltextzugriff (PDF)

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (13), p.1704-1707

2018

Volltextzugriff (PDF)

Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12020

2016

Volltextzugriff (PDF)

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

Semiconductors (Woodbury, N.Y.), 2024-03, Vol.58 (3), p.273-278

2024

Volltextzugriff (PDF)

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Optics letters, 2015-06, Vol.40 (12), p.2707-2710

2015

Volltextzugriff (PDF)

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.405-409

2023

Volltextzugriff (PDF)

Semiconductor quantum well based shutters for NIR laser mode-locking with ∼ GHz repetition rate

Journal of physics. Conference series, 2021-11, Vol.2067 (1), p.12017

2021

Volltextzugriff (PDF)

Optical shutters for a compact femtosecond Yb:KYW laser

Laser physics, 2020-02, Vol.30 (2), p.25001

2020

Volltextzugriff (PDF)

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Physical review. B, 2017-12, Vol.96 (24), Article 245304

2017

Volltextzugriff (PDF)

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

Journal of applied physics, 2012-10, Vol.112 (8)

2012

Volltextzugriff (PDF)

Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures

Semiconductors (Woodbury, N.Y.), 2018-04, Vol.52 (4), p.468-472

2018

Volltextzugriff (PDF)

Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

Applied physics letters, 2015-09, Vol.107 (12)

2015

Volltextzugriff (PDF)

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

Semiconductors (Woodbury, N.Y.), 2018-11, Vol.52 (11), p.1484-1490

2018

Volltextzugriff (PDF)

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

Semiconductors (Woodbury, N.Y.), 2020-09, Vol.54 (9), p.1119-1122

2020

Volltextzugriff (PDF)

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

JETP letters, 2017-12, Vol.106 (11), p.727-732

2017

Volltextzugriff (PDF)

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Technical physics letters, 2020-02, Vol.46 (2), p.161-164

2020

Volltextzugriff (PDF)

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Semiconductors (Woodbury, N.Y.), 2016-11, Vol.50 (11), p.1499-1505

2016

Volltextzugriff (PDF)

Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles

Optics and spectroscopy, 2019-05, Vol.126 (5), p.492-496

2019

Volltextzugriff (PDF)

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

Semiconductors (Woodbury, N.Y.), 2016-12, Vol.50 (12), p.1595-1599

2016

Volltextzugriff (PDF)

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source

Technical physics letters, 2018-07, Vol.44 (7), p.612-614

2018

Volltextzugriff (PDF)

A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths

Nanotechnology, 2002-04, Vol.13 (2), p.231-233

2002

Volltextzugriff (PDF)

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion

JETP letters, 2016-07, Vol.104 (1), p.26-31

2016

Volltextzugriff (PDF)

Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

JETP letters, 2017-04, Vol.105 (8), p.508-513

2017

Volltextzugriff (PDF)

Absorption and photoluminescence of epitaxial quantum dots in the near field of silver nanostructures

Journal of optical technology, 2017-07, Vol.84 (7), p.459

2017

Volltextzugriff (PDF)

InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12006

2015

Volltextzugriff (PDF)

1 – 25 von 174

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(148)
Mit Volltextzugriff
(157)

Publikationsform

Artikel
(156)
Tagungsberichte
(18)

Sprache

Englisch
(158)
Russisch
(18)
Japanisch
(5)

Erscheinungsjahr

n.n

Thema

Physics
(113)
Science & Technology
(112)
Physical Sciences
(110)
Physics, Condensed Matter
(58)
Physics And Astronomy
(46)
Materials Science
(35)
Gallium Arsenide
(32)
Physics, Applied
(31)
Molecular Beam Epitaxy
(25)
Magnetic Materials
(24)
Magnetism
(24)
Technology
(24)
Gallium Arsenides
(20)
Optics
(20)
Physics, Multidisciplinary
(19)
Quantum Wells
(19)
Lasers
(17)
Annealing
(16)
Materials Science, Multidisciplinary
(16)
Optical Devices
(14)

15 weitere anzeigen...

Weniger anzeigen...

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

GaAs/GaP Quantum-Well Heterostructures Grown on Si Substrates

Diffusion Blurring of GaAs Quantum Wells Grown at Low Temperature

Impact of LT-GaAs layers on crystalline properties of the epitaxial GaAs films grown by MBE on Si substrates

Influence of Intermediate Low-Temperature Heating on Precipitation in Nonstoichiometric GaAs

High-power, efficient, semiconductor saturable absorber mode-locked Yb:KGW bulk laser

Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Semiconductor quantum well based shutters for NIR laser mode-locking with ∼ GHz repetition rate

Optical shutters for a compact femtosecond Yb:KYW laser

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures

Resonant Optical Reflection from AsSb–AlGaAs Metamaterials and Structures

Ferromagnetic HfO2/Si/GaAs interface for spin-polarimetry applications

Heterostructures with InAs/AlAs Quantum Wells and Quantum Dots Grown on GaAs/Si Hybrid Substrates

Photoluminescence Spectra of InAs/GaInSb/InAs Quantum Wells in the Mid-Infrared Region

Magnetoabsorption of Dirac Fermions in InAs/GaSb/InAs “Three-Layer” Gapless Quantum Wells

A Mask Based on a Si Epitaxial Layer for the Self-Catalytic Nanowire Growth on GaAs(111)B and GaAs(100) Substrates

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

Epitaxial InGaAs Quantum Dots in Al0.29Ga0.71As Matrix: Intensity and Kinetics of Luminescence in the Near Field of Silver Nanoparticles

Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs

Zinc Diffusion into InP via a Narrow Gap from a Planar Zn3P2-Based Source

A technique for fabricating InGaAs/GaAs nanotubes of precisely controlled lengths

Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion

Interlayer current near the edge of an InAs/GaSb double quantum well in proximity with a superconductor

Absorption and photoluminescence of epitaxial quantum dots in the near field of silver nanostructures

InAsSb on GaAs (001): influence of the arsenic molecules form on composition and crystalline properties of MBE layers

Suchergebnisse filtern