UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 176

Sortiert nach

Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

Journal of crystal growth, 2003-09, Vol.257 (1-2), p.19-30

2003

Volltextzugriff (PDF)

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

Journal of crystal growth, 2002-03, Vol.236 (1), p.10-20

2002

Volltextzugriff (PDF)

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

Applied surface science, 2003-03, Vol.208, p.345-351

2003

Volltextzugriff (PDF)

Low thermal budget surface preparation of Si and SiGe

Applied surface science, 2004-03, Vol.225 (1), p.256-266

2004

Volltextzugriff (PDF)

Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors

Journal of crystal growth, 2003-12, Vol.259 (4), p.419-427

2003

Volltextzugriff (PDF)

Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure–chemical vapor deposition

Thin solid films, 2005-05, Vol.479 (1), p.113-120

2005

Volltextzugriff (PDF)

Gas immersion laser doping (GILD) for ultra-shallow junction formation

Thin solid films, 2004-04, Vol.453-454, p.106-109

2004

Volltextzugriff (PDF)

Optical characterization of laser processed ultra-shallow junctions

Applied surface science, 2003-03, Vol.208, p.277-284

2003

Volltextzugriff (PDF)

Nucleation control of CVD growth silicon nanocrystals for quantum devices

Microelectronic engineering, 2002-07, Vol.61, p.511-515

2002

Volltextzugriff (PDF)

Effect of HCl on the SiGe growth kinetics in reduced pressure—chemical vapor deposition

Journal of crystal growth, 2002-05, Vol.241 (1), p.93-100

2002

Volltextzugriff (PDF)

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Journal of non-crystalline solids, 2002-05, Vol.303 (1), p.17-23

2002

Volltextzugriff (PDF)

XPS, Raman spectroscopy, X-ray diffraction, specular X-ray reflectivity, transmission electron microscopy and elastic recoil detection analysis of emissive carbon film characterization

Surface and interface analysis, 2001-03, Vol.31 (3), p.185-190

2001

Volltextzugriff (PDF)

Reduced pressure chemical vapour deposition of Si/Si1−x−yGexCy heterostructures using a chlorinated chemistry

Semiconductor science and technology, 2003-04, Vol.18 (4), p.352-360

2003

Volltextzugriff (PDF)

Influence of carrier and doping gases on silicon quantum dots nucleation

Journal of crystal growth, 2003-08, Vol.255 (3), p.250-257

2003

Volltextzugriff (PDF)

Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices

Applied surface science, 2001-05, Vol.175-176, p.726-733

2001

Volltextzugriff (PDF)

Symbiotic low-power, smart and secure technologies in the age of hyperconnectivity

2016 IEEE International Electron Devices Meeting (IEDM), 2016, p.1.3.1-1.3.14

Semeria, M. N.

2016

Volltextzugriff (PDF)

Reduced pressure–chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 μm photo-detection

Journal of crystal growth, 2003-07, Vol.255 (1), p.8-18

2003

Volltextzugriff (PDF)

Growth temperature dependence of substitutional carbon incorporation in SiGeC/Si heterostructures

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2003-01, Vol.21 (1), p.246-253

2003

Volltextzugriff (PDF)

Influence of carrier and doping gases on the chemical vapor deposition of silicon quantum dots

Materials science & engineering. B, Solid-state materials for advanced technology, 2003-08, Vol.101 (1), p.164-168

2003

Volltextzugriff (PDF)

Surface treatment for high-quality Al2O3 and HfO2 layers deposited on HF-dipped surface by atomic layer deposition

Journal of materials science. Materials in electronics, 2003-05, Vol.14 (5-7), p.379-382

2003

Volltextzugriff (PDF)

Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

Solid-state electronics, 2003-10, Vol.47 (10), p.1613-1616

2003

Volltextzugriff (PDF)

High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors

Semiconductor science and technology, 2004-05, Vol.19 (5), p.593-601

2004

Volltextzugriff (PDF)

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Semiconductor science and technology, 2004-03, Vol.19 (3), p.311-318

2004

Volltextzugriff (PDF)

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

MRS proceedings, 2004, Vol.809, Article B2.3

2004

Volltextzugriff (PDF)

Experiment and Modelisation Results on Laser Thermal Processing for Ultra-Shallow Junction Formation: Influence of Laser Pulse Duration

MRS proceedings, 2003, Vol.765, Article D7.3

2003

Volltextzugriff (PDF)

1 – 25 von 176

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(95)
Mit Volltextzugriff
(159)

Publikationsform

Sprache

1 weiteren anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates

SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition

Laser thermal processing for ultra shallow junction formation: numerical simulation and comparison with experiments

Low thermal budget surface preparation of Si and SiGe

Selective epitaxial growth of Si and SiGe for metal oxide semiconductor transistors

Effects of the temperature and of the amount of Ge on the morphology of Ge islands grown by reduced pressure–chemical vapor deposition

Gas immersion laser doping (GILD) for ultra-shallow junction formation

Optical characterization of laser processed ultra-shallow junctions

Nucleation control of CVD growth silicon nanocrystals for quantum devices

Effect of HCl on the SiGe growth kinetics in reduced pressure—chemical vapor deposition

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

XPS, Raman spectroscopy, X-ray diffraction, specular X-ray reflectivity, transmission electron microscopy and elastic recoil detection analysis of emissive carbon film characterization

Reduced pressure chemical vapour deposition of Si/Si1−x−yGexCy heterostructures using a chlorinated chemistry

Influence of carrier and doping gases on silicon quantum dots nucleation

Ultra-thin oxides grown on silicon (1 0 0) by rapid thermal oxidation for CMOS and advanced devices

Symbiotic low-power, smart and secure technologies in the age of hyperconnectivity

Reduced pressure–chemical vapor deposition of high Ge content Si/SiGe superlattices for 1.3 μm photo-detection

Growth temperature dependence of substitutional carbon incorporation in SiGeC/Si heterostructures

Influence of carrier and doping gases on the chemical vapor deposition of silicon quantum dots

Surface treatment for high-quality Al2O3 and HfO2 layers deposited on HF-dipped surface by atomic layer deposition

Electrical and physico-chemical characterization of HfO2/SiO2 gate oxide stacks prepared by atomic layer deposition

High C content Si/Si1−yCy heterostructures for n-type metal oxide semiconductor transistors

Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices

Strained Silicon On Insulator wafers made by the Smart Cut™ technology

Experiment and Modelisation Results on Laser Thermal Processing for Ultra-Shallow Junction Formation: Influence of Laser Pulse Duration

Suchergebnisse filtern