UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 2.335

Sortiert nach

High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components

Journal of crystal growth, 2014-09, Vol.402, p.243-248

2014

Link zum Volltext

Verfügbarkeit prüfen

Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5 μm using aberration-corrected scanning transmission electron microscopy

Journal of crystal growth, 2011-08, Vol.329 (1), p.57-61

2011

Link zum Volltext

Verfügbarkeit prüfen

Highly doped InP as a low loss plasmonic material for mid-IR region

Optics express, 2016-12, Vol.24 (25), p.29077-29088

2016

Link zum Volltext

Verfügbarkeit prüfen

Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

Journal of applied physics, 2018-10, Vol.124 (13)

2018

Link zum Volltext

Verfügbarkeit prüfen

Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

Nanotechnology, 2004-04, Vol.15 (4), p.S283-S287

2004

Link zum Volltext

Verfügbarkeit prüfen

Leading magnetic resonance criteria for the risk of massive obstetric bleeding in pregnant women with placenta praevia and fused placenta

Digital diagnostics, 2021-05, Vol.2 (1S), p.14-15

2021

Link zum Volltext

Verfügbarkeit prüfen

Clinical, Anamnestic, and Demographic Characteristics of Patients with Myocardial Infarction in Russian Federation According to the Russian Registry of Acute Myocardial Infarction - REGION-IM

Kardiologiia, 2024-04, Vol.64 (4), p.3

2024

Link zum Volltext

Verfügbarkeit prüfen

Mid-IR optical properties of silicon doped InP

Optical materials express, 2017-07, Vol.7 (7), p.2260

2017

Link zum Volltext

Verfügbarkeit prüfen

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

Semiconductors (Woodbury, N.Y.), 2017-10, Vol.51 (10), p.1332-1336

2017

Link zum Volltext

Verfügbarkeit prüfen

A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers

Semiconductors (Woodbury, N.Y.), 2018-12, Vol.52 (14), p.1905-1908

2018

Link zum Volltext

Verfügbarkeit prüfen

Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

Journal of physics. Conference series, 2015-11, Vol.643 (1), p.12042

2015

Link zum Volltext

Verfügbarkeit prüfen

1.5 μm InAs InGaAsP InP quantum dot laser with improved temperature stability

Journal of physics. Conference series, 2016-08, Vol.741 (1), p.12109

2016

Link zum Volltext

Verfügbarkeit prüfen

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Semiconductors (Woodbury, N.Y.), 2017-02, Vol.51 (2), p.254-259

2017

Link zum Volltext

Verfügbarkeit prüfen

Thermodynamic analysis of the MBE growth of GaInAsN

Semiconductor science and technology, 2001-10, Vol.16 (10), p.831-835

2001

Link zum Volltext

Verfügbarkeit prüfen

Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates

Semiconductor science and technology, 2005, Vol.20 (1), p.33-37

2005

Link zum Volltext

Verfügbarkeit prüfen

Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 μm emission

Semiconductor science and technology, 2011-08, Vol.26 (8)

2011

Link zum Volltext

Verfügbarkeit prüfen

Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 µm emission

Semiconductor science and technology, 2011-08, Vol.26 (8), p.085004

2011

Link zum Volltext

Verfügbarkeit prüfen

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

Journal of Physics: Conference Series, 2011-01, Vol.326 (1), p.012046-4

2011

Link zum Volltext

Verfügbarkeit prüfen

Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission

Physica status solidi. A, Applications and materials science, 2009-05, Vol.206 (5), p.826-829

2009

Link zum Volltext

Verfügbarkeit prüfen

1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL

IEEE photonics technology letters, 2013-02, Vol.25 (4), p.365-367

2013

Link zum Volltext
IEEE_Xplore

Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers

Electronics letters, 2015-07, Vol.51 (14), p.1106-1108

2015

Link zum Volltext

Verfügbarkeit prüfen

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μ m

Applied physics letters, 2011-09, Vol.99 (10), p.101106-101106-3

2011

Link zum Volltext

Verfügbarkeit prüfen

DRAM storage time of milliseconds demonstrated in self-organized quantum dots

Physics of Semiconductors; Part B, 2007, Vol.893, p.1381-1382

2007

Link zum Volltext

Verfügbarkeit prüfen

Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots

Physica status solidi. A, Applications and materials science, 2006-05, Vol.203 (6), p.1359-1364

2006

Link zum Volltext

Verfügbarkeit prüfen

Study of the effect of high-frequency acoustic cavitation on the quality of raw milk and dairy products based on it

Vestnik Voronežskogo gosudarstvennogo universiteta inženernyh tehnologij, 2019-12, Vol.81 (3), p.145-150

2019

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 2.335

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(2.010)
Mit Volltextzugriff
(1.582)

Publikationsform

Sprache

2 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

Menü

Weitere Dienste

Einstellungen

High-quality MOVPE butt-joint integration of InP/AlGaInAs/InGaAsP-based all-active optical components

Investigating the chemical and morphological evolution of GaAs capped InAs/InP quantum dots emitting at 1.5 μm using aberration-corrected scanning transmission electron microscopy

Highly doped InP as a low loss plasmonic material for mid-IR region

Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

Metamorphic growth for application in long-wavelength (1.3–1.55 µm) lasers and MODFET-type structures on GaAs substrates

Leading magnetic resonance criteria for the risk of massive obstetric bleeding in pregnant women with placenta praevia and fused placenta

Clinical, Anamnestic, and Demographic Characteristics of Patients with Myocardial Infarction in Russian Federation According to the Russian Registry of Acute Myocardial Infarction - REGION-IM

Mid-IR optical properties of silicon doped InP

On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate

A Search for Asymmetric Barrier Layers for 1550 nm Al-Free Diode Lasers

Diode lasers with asymmetric barriers for 850 nm spectral range: experimental studies of power characteristics

1.5 μm InAs InGaAsP InP quantum dot laser with improved temperature stability

Specific features of waveguide recombination in laser structures with asymmetric barrier layers

Thermodynamic analysis of the MBE growth of GaInAsN

Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates

Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 μm emission

Carrier wavefunction control in a dilute nitride-based quantum well—a quantum dot tunnel injection system for 1.3 µm emission

Towards quantitative three-dimensional characterisation of buried InAs quantum dots

Optical properties and energy transfer in InGaAsN quantum well - InAs quantum dots tunnel injection structures for 1.3 μm emission

1060-nm Tunable Monolithic High Index Contrast Subwavelength Grating VCSEL

Suppression of sublinearity of light–current curve in 850 nm quantum well laser with asymmetric barrier layers

Metal organic vapor-phase epitaxy of InAs/InGaAsP quantum dots for laser applications at 1.5 μ m

DRAM storage time of milliseconds demonstrated in self-organized quantum dots

Comparative study of GaAs-based 1.5 micron-range InAs/InGaAs and InAs/InAlAs self-assembled quantum dots

Study of the effect of high-frequency acoustic cavitation on the quality of raw milk and dairy products based on it

Suchergebnisse filtern