UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

Solid-state electronics, 2010, Vol.54 (1), p.1-3

2010

Volltextzugriff (PDF)

ZnCdSe/ZnCdMgSe quantum wells on InP substrates for visible emitters

Applied physics letters, 1996-06, Vol.68 (24), p.3446-3448

1996

Volltextzugriff (PDF)

Subpicosecond Luminescence Studies of Carrier Dynamics in Nitride Semiconductors Grown Homoepitaxially By MBE On GaN Templates

MRS proceedings, 2002, Vol.743, Article L5.7

2002

Volltextzugriff (PDF)

Molecular beam epitaxial growth of lattice-matched ZnxCdyMg1−x−ySe quaternaries on InP substrates

Journal of crystal growth, 1997-05, Vol.175-176, p.541-545

1997

Volltextzugriff (PDF)

Optimized growth of lattice-matched ZnCdSe epilayers on InP substrates

Journal of crystal growth, 1997-05, Vol.175-176, p.558-563

1997

Volltextzugriff (PDF)

Time-Resolved Reflectivity Studies of Carrier Dynamics as a Function of Al Content in AlGaN Alloys

Physica status solidi. A, Applied research, 2001-12, Vol.188 (2), p.807-810

2001

Volltextzugriff (PDF)

Improved optoelectronic mixing of InAlAs/InGaAs interdigitated-finger metal-semiconductor-metal photodetectors

Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498), 2003, Vol.2, p.1021-1025 Vol.2

2003

Volltextzugriff (PDF)

Very low defect density ZnSe grown on GaAs by atmospheric pressure metal organic chemical vapor deposition

Materials chemistry and physics, 1996-07, Vol.45 (1), p.88-91

1996

Volltextzugriff (PDF)

MOCVD Growth and Characterization of High-Quality ZnSe on GaAs

MRS proceedings, 1994, Vol.340, Article 503

1994

Volltextzugriff (PDF)

MBE growth of lattice-matched ZnCdMgSe quaternaries and ZnCdMgSe/ZnCdSe quantum wells on InP substrates

Journal of electronic materials, 1996-02, Vol.25 (2), p.259-262

1996

Volltextzugriff (PDF)

In situ relaxed Si1−xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 1998-05, Vol.16 (3), p.1489-1491

1998

Volltextzugriff (PDF)

Ohmic and Rectifying Contacts to n and p-type GaN Films

MRS proceedings, 2002, Vol.743, Article L11.58

2002

Volltextzugriff (PDF)

Growth and Characterization of Zn 1-x Mn x Se 1-y S y Epilayers and Related Heterostructures

MRS proceedings, 1996, Vol.452, Article 293

1996

Volltextzugriff (PDF)

Growth and Characterization of Zn1-xMnxSe1-ySy Epilayers and Related Heterostructures

MRS proceedings, 1996, Vol.452

1996

Volltextzugriff (PDF)

Molecular beam epitaxial growth of lattice-matched Zn Cd Mg1−−Se quaternaries on InP substrates

Journal of crystal growth, 1997-05, Vol.175-176, p.541-545

1997

Volltextzugriff (PDF)

Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source

MRS proceedings, 1999, Vol.595, Article F99W11.37

1999

Volltextzugriff (PDF)

Molecular beam epitaxial growth of high quality Zn1− x Cd x Se on InP substrates

Applied physics letters, 1995-05, Vol.66 (20), p.2742-2744

1995

Volltextzugriff (PDF)

Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE

MRS proceedings, 1995, Vol.395, Article 547

1995

Volltextzugriff (PDF)

Optimized growth of lattice-matched ZnCdSe epilayers on InP substrates

Journal of crystal growth, 1997, Vol.175-76, p.558-563

1997

Volltextzugriff (PDF)

Molecular beam epitaxial growth of lattice-matched ZnxCdyMg1-x-ySe quaternaries on InP substrates

Journal of crystal growth, 1997, Vol.175-76, p.541-545

1997

Volltextzugriff (PDF)

1 – 20 von 20

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(10)
Mit Volltextzugriff
(12)

Publikationsform

Artikel
(16)
Tagungsberichte
(4)

Sprache

Englisch
(20)

Erscheinungsjahr

n.n

Menü

Weitere Dienste

Einstellungen

Front and back side processed unintentionally doped GaAs Schottky detectors for X-ray detection

ZnCdSe/ZnCdMgSe quantum wells on InP substrates for visible emitters

Subpicosecond Luminescence Studies of Carrier Dynamics in Nitride Semiconductors Grown Homoepitaxially By MBE On GaN Templates

Molecular beam epitaxial growth of lattice-matched ZnxCdyMg1−x−ySe quaternaries on InP substrates

Optimized growth of lattice-matched ZnCdSe epilayers on InP substrates

Time-Resolved Reflectivity Studies of Carrier Dynamics as a Function of Al Content in AlGaN Alloys

Improved optoelectronic mixing of InAlAs/InGaAs interdigitated-finger metal-semiconductor-metal photodetectors

Very low defect density ZnSe grown on GaAs by atmospheric pressure metal organic chemical vapor deposition

MOCVD Growth and Characterization of High-Quality ZnSe on GaAs

MBE growth of lattice-matched ZnCdMgSe quaternaries and ZnCdMgSe/ZnCdSe quantum wells on InP substrates

In situ relaxed Si1−xGex epitaxial layers with low threading dislocation densities grown on compliant Si-on-insulator substrates

Ohmic and Rectifying Contacts to n and p-type GaN Films

Growth and Characterization of Zn 1-x Mn x Se 1-y S y Epilayers and Related Heterostructures

Growth and Characterization of Zn1-xMnxSe1-ySy Epilayers and Related Heterostructures

Molecular beam epitaxial growth of lattice-matched Zn Cd Mg1−−Se quaternaries on InP substrates

Characterization of InGaN Quantum Wells Grown by Molecular Beam Epitaxy (MBE) Using Ammonia as the Nitrogen Source

Molecular beam epitaxial growth of high quality Zn1− x Cd x Se on InP substrates

Optical Properties of Wurtzite-and Zincblende-GaN Films Grown by RF Plasma-MBE

Optimized growth of lattice-matched ZnCdSe epilayers on InP substrates

Molecular beam epitaxial growth of lattice-matched ZnxCdyMg1-x-ySe quaternaries on InP substrates

Suchergebnisse filtern