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Improved Passivation Effect Due to Controlled Smoothing of the CdTe-HgCdTe Interface Gradient by Thermal Annealing

Journal of electronic materials, 2019-10, Vol.48 (10), p.6099-6107

2019

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FutureBuilt Zero - A simplified dynamic LCA method with requirements for low carbon emissions from buildings

IOP conference series. Earth and environmental science, 2022-09, Vol.1078 (1), p.12047

2022

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Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

Journal of electronic materials, 2019-10, Vol.48 (10), p.6124-6137

2019

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GHG emission requirements and benchmark values for Norwegian buildings

IOP conference series. Earth and environmental science, 2020-11, Vol.588 (2), p.22005

2020

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Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb

Journal of crystal growth, 2009-03, Vol.311 (7), p.1688-1691

2009

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HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

Journal of electronic materials, 2010-07, Vol.39 (7), p.893-902

2010

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Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

Journal of electronic materials, 2008-09, Vol.37 (9), p.1444-1452

2008

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Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

Journal of physics. Conference series, 2008-03, Vol.100 (4), p.042024

2008

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Nanowires in the CdHgTe Material System

Journal of electronic materials, 2008-09, Vol.37 (9), p.1311-1317

2008

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Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Applied physics letters, 1999-12, Vol.75 (23), p.3665-3667

1999

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Midinfrared vertical-cavity surface-emitting laser

Applied physics letters, 1997-12, Vol.71 (24), p.3483-3485

1997

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Growth of HgTe nanowires

Physica scripta, 2006-09, Vol.2006, p.115-120

2006

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Calibration of the arsenic mole fraction in MBE grown GaAsySb1−y and AlxGa1−xAsySb1−y (y<0.2)

Journal of crystal growth, 2001-07, Vol.227-228, p.562-565

2001

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Photoluminescence from CdxHg1-xTe

Journal of physics. Conference series, 2008-03, Vol.100 (4), p.042041

2008

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Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Applied physics letters, 1999-12, Vol.75 (26), p.4156-4158

1999

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Imaging photovoltaic infrared CdHgTe detectors

Physica scripta, 2006-09, Vol.2006, p.31-36

2006

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The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

Physica scripta, 2006-09, Vol.2006, p.110-114

2006

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Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe

Journal of electronic materials, 2005-06, Vol.34 (6), p.922-927

2005

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Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures

Physical review. B, Condensed matter and materials physics, 2000-10, Vol.62 (16), p.10984

2000

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Electrical characterization of HgTe nanowires using conductive atomic force microscopy

Journal of applied physics, 2010-12, Vol.108 (11), p.114308-114308-5

2010

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Suppression of intervalley scattering in Ga(As)Sb quantum wells

Applied physics letters, 2000-10, Vol.77 (18), p.2882-2884

2000

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Segmented nanowires of HgTe and Te grown by molecular beam epitaxy

Applied physics letters, 2008-03, Vol.92 (13), p.133108-133108-3

2008

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Critical thickness of MBE-grown Ga 1− x In x Sb ( x<0.2) on GaSb

Journal of crystal growth, 2009, Vol.311 (7), p.1688-1691

2009

Volltextzugriff (PDF)

Continuous-wave mid-infrared VCSELs

IEEE photonics technology letters, 1998-05, Vol.10 (5), p.660-662

1998

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Deactivation of Be acceptors by atomic hydrogen in AlGaAs/GaAs quantum well structures

Applied physics letters, 1997-10, Vol.71 (15), p.2139-2141

1997

Volltextzugriff (PDF)

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Improved Passivation Effect Due to Controlled Smoothing of the CdTe-HgCdTe Interface Gradient by Thermal Annealing

FutureBuilt Zero - A simplified dynamic LCA method with requirements for low carbon emissions from buildings

Characterization of (111)B and (211)B CdZnTe Substrates for HgCdTe Growth

GHG emission requirements and benchmark values for Norwegian buildings

Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb

HgCdTe Research at FFI: Molecular Beam Epitaxy Growth and Characterization

Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy

Excitation density dependence of the photoluminescence from CdxHg1-xTe multiple quantum wells

Nanowires in the CdHgTe Material System

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Midinfrared vertical-cavity surface-emitting laser

Growth of HgTe nanowires

Calibration of the arsenic mole fraction in MBE grown GaAsySb1−y and AlxGa1−xAsySb1−y (y<0.2)

Photoluminescence from CdxHg1-xTe

Subpicosecond spin relaxation in GaAsSb multiple quantum wells

Imaging photovoltaic infrared CdHgTe detectors

The effect of growth interruptions at the interfaces in epitaxially grown GaInAsSb/AlGaAsSb multiple-quantum-wells studied with high-resolution x-ray diffraction and photoluminescence

Imaging one-dimensional and two-dimensional planar photodiode detectors fabricated by ion milling molecular beam epitaxy CdHgTe

Effects of monolayer AlAs insertion in modulation doped GaAs/AlxGa1-xAs quantum-well structures

Electrical characterization of HgTe nanowires using conductive atomic force microscopy

Suppression of intervalley scattering in Ga(As)Sb quantum wells

Segmented nanowires of HgTe and Te grown by molecular beam epitaxy

Critical thickness of MBE-grown Ga 1− x In x Sb ( x<0.2) on GaSb

Continuous-wave mid-infrared VCSELs

Deactivation of Be acceptors by atomic hydrogen in AlGaAs/GaAs quantum well structures

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