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General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

IEEE transactions on electron devices, 2020-03, Vol.67 (3), p.1149-1156

2020

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Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays

Nature nanotechnology, 2015-09, Vol.10 (9), p.791-795

2015

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Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Solid-state electronics, 2014-08, Vol.98, p.63-69

2014

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Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

IEEE transactions on electron devices, 2024-03, Vol.71 (3), p.1745-1751

2024

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Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

IEEE transactions on electron devices, 2012-08, Vol.59 (8), p.2085-2092

2012

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Zero‐fluoroscopy permanent pacemaker implantation using Ensite NavX system: Clinical viability or fanciful technique?

Pacing and clinical electrophysiology, 2018-02, Vol.41 (2), p.122-127

2018

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Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2727-2735

2005

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Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

IEEE transactions on electron devices, 2003-12, Vol.50 (12), p.2445-2455

2003

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Modeling, simulation and design of the vertical Graphene Base Transistor

Microelectronic engineering, 2013-09, Vol.109, p.338-341

2013

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On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Journal of applied physics, 2012-08, Vol.112 (3)

2012

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Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2086-2096

2008

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Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

IEEE transactions on electron devices, 2007-05, Vol.54 (5), p.1156-1164

2007

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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

IEEE transactions on electron devices, 2019-04, Vol.66 (4), p.1810-1814

2019

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On the Apparent Mobility in Nanometric n-MOSFETs

IEEE electron device letters, 2007-11, Vol.28 (11), p.1036-1039

2007

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On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1634-1640

2006

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Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

Solid-state electronics, 2013-11, Vol.89, p.161-166

2013

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Mobility extraction in SOI MOSFETs with sub 1 nm body thickness

Solid-state electronics, 2009-12, Vol.53 (12), p.1246-1251

2009

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Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2736-2743

2005

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Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

Frontiers in physics, 2022-08, Vol.10

2022

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Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

IEEE transactions on electron devices, 2009-09, Vol.56 (9), p.1980-1990

2009

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Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions

Journal of instrumentation, 2019-01, Vol.14 (1), p.C01003-C01003

2019

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An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.802-808

2003

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Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

IEEE transactions on circuits and systems. I, Regular papers, 2009-05, Vol.56 (5), p.920-932

2009

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Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2842-2850

2001

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An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations

Semiconductor science and technology, 2010-05, Vol.25 (5), p.055011-055011

2010

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General Approach to Model the Surface Charge Induced by Multiple Surface Chemical Reactions in Potentiometric FET Sensors

Real-time imaging of microparticles and living cells with CMOS nanocapacitor arrays

Models for the use of commercial TCAD in the analysis of silicon-based integrated biosensors

Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis

Strain-Induced Performance Improvements in InAs Nanowire Tunnel FETs

Zero‐fluoroscopy permanent pacemaker implantation using Ensite NavX system: Clinical viability or fanciful technique?

Understanding quasi-ballistic transport in nano-MOSFETs: part I-scattering in the channel and in the drain

Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs

Modeling, simulation and design of the vertical Graphene Base Transistor

On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks

Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

Multisubband Monte Carlo Study of Transport, Quantization, and Electron-Gas Degeneration in Ultrathin SOI n-MOSFETs

A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

On the Apparent Mobility in Nanometric n-MOSFETs

On the physical understanding of the kT-layer concept in quasi-ballistic regime of transport in nanoscale devices

Interpretation of graphene mobility data by means of a semiclassical Monte Carlo transport model

Mobility extraction in SOI MOSFETs with sub 1 nm body thickness

Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

Experimental and Simulation Analysis of Program/Retention Transients in Silicon Nitride-Based NVM Cells

Gain and noise in GaAs/AlGaAs avalanche photodiodes with thin multiplication regions

An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

Design of Ultra-Wideband Low-Noise Amplifiers in 45-nm CMOS Technology: Comparison Between Planar Bulk and SOI FinFET Devices

Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

An improved empirical approach to introduce quantization effects in the transport direction in multi-subband Monte Carlo simulations

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