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Ultralong dephasing time in InGaAs quantum dots

Physical review letters, 2001-10, Vol.87 (15), p.157401-157401

2001

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Excited-state gain dynamics in InGaAs quantum-dot amplifiers

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2014-2016

2005

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Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Applied physics letters, 2001-02, Vol.78 (9), p.1207-1209

2001

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Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Physical review. B, Condensed matter, 2002-08, Vol.66 (8), Article 081306

2002

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Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature

IEEE journal of selected topics in quantum electronics, 2002-09, Vol.8 (5), p.984-991

2002

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Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Applied physics letters, 2003-02, Vol.82 (6), p.952-954

2003

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Limits of In(Ga)As/GaAs quantum dot growth

Physica Status Solidi (b), 2009-04, Vol.246 (4), p.717-720

2009

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Dynamic filamentation and beam quality of quantum-dot lasers

Applied physics letters, 2004-03, Vol.84 (10), p.1650-1652

2004

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BAM-L002-a new type of certified reference material for length calibration and testing of lateral resolution in the nanometre range

Surface and interface analysis, 2004-10, Vol.36 (10), p.1423-1426

2004

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Relaxation and dephasing of multiexcitons in semiconductor quantum dots

Physical review letters, 2002-10, Vol.89 (18), p.187401-187401, Article 187401

2002

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High-reliability MOCVD-grown quantum dot laser

Electronics letters, 2002-08, Vol.38 (16), p.883-884

2002

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Repulsive exciton-exciton interaction in quantum dots

Physical review. B, Condensed matter, 2003-07, Vol.68 (3), Article 035331

2003

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Linewidth enhancement factor in InGaAs quantum-dot amplifiers

IEEE journal of quantum electronics, 2004-10, Vol.40 (10), p.1423-1429

2004

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High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

IEEE photonics technology letters, 2004-05, Vol.16 (5), p.1415-1417

2004

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Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers

Semiconductor science and technology, 2004-05, Vol.19 (5), p.L43-L47

2004

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Dephasing of biexcitons in InGaAs quantum dots

Physica Status Solidi (b), 2003-08, Vol.238 (3), p.593-600

2003

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Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers

Applied physics letters, 2006-03, Vol.88 (13), p.133119-133119-3

2006

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Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix

Applied physics letters, 2002-12, Vol.81 (27), p.5150-5152

2002

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Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature

Applied physics letters, 2001-11, Vol.79 (22), p.3573-3575

2001

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1.24 μ m InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

Applied physics letters, 2004-04, Vol.84 (16), p.2992-2994

2004

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Ripening of self-organized InAs quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.606-610

2004

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Self-induced transparency in InGaAs quantum-dot waveguides

Applied physics letters, 2003-11, Vol.83 (18), p.3668-3670

2003

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Nanovoids in InGaAs∕GaAs quantum dots observed by cross-sectional scanning tunneling microscopy

Applied physics letters, 2004-10, Vol.85 (17), p.3848-3850

2004

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Direct observation of tunneling emission to determine localization energies in self-organized In(Ga)As quantum dots

Physica. E, Low-dimensional systems & nanostructures, 2006-05, Vol.32 (1), p.171-174

2006

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Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers

Applied physics letters, 2003-02, Vol.82 (6), p.841-843

2003

Volltextzugriff (PDF)

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Ultralong dephasing time in InGaAs quantum dots

Excited-state gain dynamics in InGaAs quantum-dot amplifiers

Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers

Rabi oscillations in the excitonic ground-state transition of InGaAs quantum dots

Exciton relaxation and dephasing in quantum-dot amplifiers from room to cryogenic temperature

Complete suppression of filamentation and superior beam quality in quantum-dot lasers

Limits of In(Ga)As/GaAs quantum dot growth

Dynamic filamentation and beam quality of quantum-dot lasers

BAM-L002-a new type of certified reference material for length calibration and testing of lateral resolution in the nanometre range

Relaxation and dephasing of multiexcitons in semiconductor quantum dots

High-reliability MOCVD-grown quantum dot laser

Repulsive exciton-exciton interaction in quantum dots

Linewidth enhancement factor in InGaAs quantum-dot amplifiers

High bit rate and elevated temperature data transmission using InGaAs quantum-dot lasers

Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers

Dephasing of biexcitons in InGaAs quantum dots

Subpicosecond high-power mode locking using flared waveguide monolithic quantum-dot lasers

Reversed truncated cone composition distribution of In0.8Ga0.2As quantum dots overgrown by an In0.1Ga0.9As layer in a GaAs matrix

Over 30-fold enhancement of light extraction from free-standing photonic crystal slabs with InGaAs quantum dots at low temperature

1.24 μ m InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine

Ripening of self-organized InAs quantum dots

Self-induced transparency in InGaAs quantum-dot waveguides

Nanovoids in InGaAs∕GaAs quantum dots observed by cross-sectional scanning tunneling microscopy

Direct observation of tunneling emission to determine localization energies in self-organized In(Ga)As quantum dots

Alternative-precursor metalorganic chemical vapor deposition of self-organized InGaAs/GaAs quantum dots and quantum-dot lasers

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