UB Paderborn / Katalog / Suche / in CDI

A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures

New journal of physics, 2010-09, Vol.12 (9), p.093005

2010

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Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Journal of applied physics, 2007-07, Vol.102 (1)

2007

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Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

New journal of physics, 2008-11, Vol.10 (11), p.113004

2008

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On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2009-01, Vol.27 (1), p.271-276

2009

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Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions

Physical review. B, Condensed matter and materials physics, 2009-07, Vol.80 (4), p.045414, Article 045414

2009

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Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Physica status solidi. C, 2009-03, Vol.6 (3), p.653-662

2009

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Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

Microelectronic engineering, 2009-07, Vol.86 (7), p.1842-1844

2009

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Complex interface and growth analysis of single crystalline epi-Si(111)/Y2O3/ Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control

Surface and interface analysis, 2011-04, Vol.43 (4), p.827-835

2011

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On the charge-density-wave mechanism of layered 2H-TaSe2: photoemission results

Journal of electron spectroscopy and related phenomena, 2004-07, Vol.137-140, p.675-679, Article 675

2004

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Tuning dimensionality by nanowire adsorption on layered materials

Physical review letters, 2001-02, Vol.86 (7), p.1303-1306

2001

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Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

Journal of applied physics, 2008-05, Vol.103 (10), p.104103-104103-5

2008

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Reconstruction of Cleaved 6H-SiC Surfaces

Materials science forum, 2004-01, Vol.457-460, p.391-394

2004

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Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

Journal of applied physics, 2010-10, Vol.108 (7), p.073526-073526-7

2010

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Single crystalline Pr2−xYxO3 (x=–2) dielectrics on Si with tailored electronic and crystallographic structure

Journal of applied physics, 2010-11, Vol.108 (10)

2010

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The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Journal of applied physics, 2008-04, Vol.103 (8)

2008

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Single crystalline Pr 2 − x Y x O 3 ( x = 0 - 2 ) dielectrics on Si with tailored electronic and crystallographic structure

Journal of applied physics, 2010-11, Vol.108 (10), p.103709-103709-4

2010

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Single crystalline Pr{sub 2-x}Y{sub x}O{sub 3} (x=0-2) dielectrics on Si with tailored electronic and crystallographic structure

Journal of applied physics, 2010-11, Vol.108 (10)

2010

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Metallic nickel nanorod arrays embedded into ordered block copolymer templates

Thin solid films, 2007-06, Vol.515 (16), p.6552-6556

2007

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Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

Journal of applied physics, 2009-11, Vol.106 (10)

2009

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Self-assembled Ge nanocrystals on high-k cubic Pr2O3(111)∕Si(111) support systems

Journal of applied physics, 2007-08, Vol.102 (3)

2007

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Dielectric properties of single crystalline PrO 2 ( 111 ) / Si ( 111 ) heterostructures: Amorphous interface and electrical instabilities

Journal of applied physics, 2009-11, Vol.106 (10), p.104105-104105-8

2009

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Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

Journal of applied physics, 2008-04, Vol.103 (8), p.084102-084102-11

2008

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Complex interface and growth analysis of single crystalline epi‐Si(111)/Y 2 O 3 / Pr 2 O 3 /Si(111) heterostructures: Strain engineering by oxide buffer control

Surface and interface analysis, 2011-04, Vol.43 (4), p.827-835

2011

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Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high- k Pr x Al 2 − x O 3 ( x = 0 - 2 ) dielectrics on TiN for dynamic random access memory applications

Journal of applied physics, 2007-07, Vol.102 (1), p.014103-014103-9

2007

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The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline Pr O 2 ( 111 ) ∕ Si ( 111 ) support systems

Journal of applied physics, 2008-04, Vol.103 (8), p.084110-084110-10

2008

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A novel engineered oxide buffer approach for fully lattice-matched SOI heterostructures

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2−xO3 (x=0–2) dielectrics on TiN for dynamic random access memory applications

Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures

On the band gaps and electronic structure of thin single crystalline praseodymium oxide layers on Si(111)

Growth of praseodymium oxide on Si(111) under oxygen-deficient conditions

Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors

Hf- and Zr-based alkaline earth perovskite dielectrics for memory applications

Complex interface and growth analysis of single crystalline epi-Si(111)/Y2O3/ Pr2O3/Si(111) heterostructures: Strain engineering by oxide buffer control

On the charge-density-wave mechanism of layered 2H-TaSe2: photoemission results

Tuning dimensionality by nanowire adsorption on layered materials

Microscopic model for the nonlinear behavior of high- k metal-insulator-metal capacitors

Reconstruction of Cleaved 6H-SiC Surfaces

Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

Single crystalline Pr2−xYxO3 (x=–2) dielectrics on Si with tailored electronic and crystallographic structure

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline PrO2(111)∕Si(111) support systems

Single crystalline Pr 2 − x Y x O 3 ( x = 0 - 2 ) dielectrics on Si with tailored electronic and crystallographic structure

Single crystalline Pr{sub 2-x}Y{sub x}O{sub 3} (x=0-2) dielectrics on Si with tailored electronic and crystallographic structure

Metallic nickel nanorod arrays embedded into ordered block copolymer templates

Dielectric properties of single crystalline PrO2(111)/Si(111) heterostructures: Amorphous interface and electrical instabilities

Self-assembled Ge nanocrystals on high-k cubic Pr2O3(111)∕Si(111) support systems

Dielectric properties of single crystalline PrO 2 ( 111 ) / Si ( 111 ) heterostructures: Amorphous interface and electrical instabilities

Lattice engineering of dielectric heterostructures on Si by isomorphic oxide-on-oxide epitaxy

Complex interface and growth analysis of single crystalline epi‐Si(111)/Y 2 O 3 / Pr 2 O 3 /Si(111) heterostructures: Strain engineering by oxide buffer control

Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high- k Pr x Al 2 − x O 3 ( x = 0 - 2 ) dielectrics on TiN for dynamic random access memory applications

The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline Pr O 2 ( 111 ) ∕ Si ( 111 ) support systems

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