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Optically active erbium centers in silicon

Physical review. B, Condensed matter, 1996-07, Vol.54 (4), p.2532-2547

1996

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On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-06, Vol.268 (11), p.2051-2055

2010

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Modeling of high-current source-gated transistors in amorphous silicon

Applied physics letters, 2005-02, Vol.86 (7), p.073503-073503-3

2005

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Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation

Ultramicroscopy, 2007-09, Vol.107 (9), p.819-824

2007

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Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Semiconductor science and technology, 2003-09, Vol.18 (9), p.839-844

2003

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Differential Hall profiling of ultra-shallow junctions in Si and SOI

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.305-309

2005

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Enhanced n-type dopant solubility in tensile-strained Si

Thin solid films, 2008-11, Vol.517 (1), p.331-333

2008

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Dual carbon effect on electrical properties of high dose indium implants in silicon

Electronics letters, 2005-11, Vol.41 (23), p.1302-1304

2005

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Electrical isolation of InP and InGaAs using iron and krypton

Electronics letters, 2004-09, Vol.40 (20), p.1302-1304

2004

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Suppression of boron interstitial clusters in SOI using vacancy engineering

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.210-214

2005

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Concentration profiles of antimony-doped shallow layers in silicon

Semiconductor science and technology, 2004-06, Vol.19 (6), p.728-732

2004

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Structural and electrical characterisation of ion-implanted strained silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.118-121

2008

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Differential Hall characterisation of ultrashallow doping in advanced Si-based materials

Materials science & engineering. B, Solid-state materials for advanced technology, 2008-12, Vol.154, p.229-233

2008

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Oxygen-related vacancy-type defects in ion-implanted silicon

Journal of physics. Condensed matter, 2003-10, Vol.15 (39), p.S2825-S2833

2003

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Constraints on micro-Raman strain metrology for highly doped strained Si materials

Applied physics letters, 2008-06, Vol.92 (23)

2008

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Implantation induced electrical isolation of sulphur doped GaNxAs1−x layers

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-08, Vol.237 (1-2), p.102-106

2005

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Low-temperature processing of antimony-implanted silicon

Journal of electronic materials, 2004-07, Vol.33 (7), p.767-769

2004

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Raman scattering studies of ultrashallow Sb implants in strained Si

Journal of materials science. Materials in electronics, 2008-04, Vol.19 (4), p.305-309

2008

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Implant isolation of plasma-assisted MBE grown GaInAsN for opto-telecommunication applications

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-10, Vol.240 (1-2), p.214-218

2005

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Vacancy-engineering implants for high boron activation in silicon on insulator

Applied physics letters, 2006-02, Vol.88 (8)

2006

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Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

Applied physics letters, 2004-09, Vol.85 (11), p.1979-1980

2004

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Electron field-emission properties of Ag–SiO2 nanocomposite layers

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2006-03, Vol.24 (2), p.958-961

2006

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The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.453-457

2005

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Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206 (Complete), p.1003-1007

2003

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Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206 (Complete), p.1008-1012

2003

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Optically active erbium centers in silicon

On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs

Modeling of high-current source-gated transistors in amorphous silicon

Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Differential Hall profiling of ultra-shallow junctions in Si and SOI

Enhanced n-type dopant solubility in tensile-strained Si

Dual carbon effect on electrical properties of high dose indium implants in silicon

Electrical isolation of InP and InGaAs using iron and krypton

Suppression of boron interstitial clusters in SOI using vacancy engineering

Concentration profiles of antimony-doped shallow layers in silicon

Structural and electrical characterisation of ion-implanted strained silicon

Differential Hall characterisation of ultrashallow doping in advanced Si-based materials

Oxygen-related vacancy-type defects in ion-implanted silicon

Constraints on micro-Raman strain metrology for highly doped strained Si materials

Implantation induced electrical isolation of sulphur doped GaNxAs1−x layers

Low-temperature processing of antimony-implanted silicon

Raman scattering studies of ultrashallow Sb implants in strained Si

Implant isolation of plasma-assisted MBE grown GaInAsN for opto-telecommunication applications

Vacancy-engineering implants for high boron activation in silicon on insulator

Differential Hall effect profiling of ultrashallow junctions in Sb implanted silicon

Electron field-emission properties of Ag–SiO2 nanocomposite layers

The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates

Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs

Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature

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