UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 482

Sortiert nach

Modeling of high-current source-gated transistors in amorphous silicon

Applied physics letters, 2005-02, Vol.86 (7), p.073503-073503-3

2005

Link zum Volltext

Verfügbarkeit prüfen

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Semiconductor science and technology, 2003-09, Vol.18 (9), p.839-844

2003

Link zum Volltext

Verfügbarkeit prüfen

Differential Hall profiling of ultra-shallow junctions in Si and SOI

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.305-309

2005

Link zum Volltext

Verfügbarkeit prüfen

Concentration profiles of antimony-doped shallow layers in silicon

Semiconductor science and technology, 2004-06, Vol.19 (6), p.728-732

2004

Link zum Volltext

Verfügbarkeit prüfen

Oxygen-related vacancy-type defects in ion-implanted silicon

Journal of physics. Condensed matter, 2003-10, Vol.15 (39), p.S2825-S2833

2003

Link zum Volltext

Verfügbarkeit prüfen

Suppression of boron interstitial clusters in SOI using vacancy engineering

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.210-214

2005

Link zum Volltext

Verfügbarkeit prüfen

Dual carbon effect on electrical properties of high dose indium implants in silicon

Electronics letters, 2005, Vol.41 (23), p.1302-1304

2005

Link zum Volltext

Verfügbarkeit prüfen

Raman scattering studies of ultrashallow Sb implants in strained Si

Journal of materials science. Materials in electronics, 2008-04, Vol.19 (4), p.305-309

2008

Link zum Volltext

Verfügbarkeit prüfen

Low-temperature processing of antimony-implanted silicon

Journal of electronic materials, 2004-07, Vol.33 (7), p.767-769

2004

Link zum Volltext

Verfügbarkeit prüfen

On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-06, Vol.268 (11), p.2051-2055

2010

Link zum Volltext

Verfügbarkeit prüfen

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Journal of applied physics, 2001-01, Vol.89 (1), p.76-79

2001

Link zum Volltext

Verfügbarkeit prüfen

Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

Semiconductor science and technology, 2001-05, Vol.16 (5), p.L28-L31

2001

Link zum Volltext

Verfügbarkeit prüfen

The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation

Semiconductor science and technology, 2001-03, Vol.16 (3), p.L17-L19

2001

Link zum Volltext

Verfügbarkeit prüfen

Evaluation of BBr2+ and B++Br+ implants in silicon

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124-125, p.196-199

2005

Link zum Volltext

Verfügbarkeit prüfen

The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates

Materials science & engineering. B, Solid-state materials for advanced technology, 2005-12, Vol.124, p.453-457

2005

Link zum Volltext

Verfügbarkeit prüfen

Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206 (Complete), p.1008-1012

2003

Link zum Volltext

Verfügbarkeit prüfen

Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-05, Vol.206 (Complete), p.1003-1007

2003

Link zum Volltext

Verfügbarkeit prüfen

Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures

Applied physics letters, 2002-05, Vol.80 (20), p.3745-3747

2002

Link zum Volltext

Verfügbarkeit prüfen

Constraints on micro-Raman strain metrology for highly doped strained Si materials

Applied physics letters, 2008-06, Vol.92 (23)

2008

Link zum Volltext

Verfügbarkeit prüfen

Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation

Ultramicroscopy, 2007-09, Vol.107 (9), p.819-824

2007

Link zum Volltext

Verfügbarkeit prüfen

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Thin solid films, 1998-11, Vol.332 (1-2), p.118-123

1998

Link zum Volltext

Verfügbarkeit prüfen

Indium clustering in a silicon matrix in the presence of carbon co-implantation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2003-08, Vol.209 (Complete), p.136-139

2003

Link zum Volltext

Verfügbarkeit prüfen

Enhanced n-type dopant solubility in tensile-strained Si

Thin solid films, 2008-11, Vol.517 (1), p.331-333

2008

Link zum Volltext

Verfügbarkeit prüfen

Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials

Journal of electronic materials, 2001-02, Vol.30 (2), p.L5-L7

2001

Link zum Volltext

Verfügbarkeit prüfen

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Physica. B, Condensed matter, 2003-12, Vol.340-342, p.1094-1098

2003

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 482

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(405)
Mit Volltextzugriff
(428)

Publikationsform

Sprache

Englisch
(478)
Japanisch
(35)

Erscheinungsjahr

n.n

Thema

Science & Technology
(353)
Physics
(236)
Physical Sciences
(228)
Technology
(223)
Physics, Applied
(91)
Materials Science
(88)
Exact Sciences And Technology
(81)
Nuclear Science & Technology
(81)
Materials Science, Multidisciplinary
(79)
Instruments & Instrumentation
(75)
Physics, Nuclear
(75)
Physics, Atomic, Molecular & Chemical
(73)
Engineering
(72)
Life Sciences & Biomedicine
(72)
Engineering, Electrical & Electronic
(69)
Physics, Condensed Matter
(69)
Humans
(54)
Ion Implantation
(45)
Condensed Matter: Structure, Mechanical And Thermal Properties
(35)
Animals
(34)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Modeling of high-current source-gated transistors in amorphous silicon

Retarding transient enhanced diffusion of boron in silicon with high energy silicon co-implants

Differential Hall profiling of ultra-shallow junctions in Si and SOI

Concentration profiles of antimony-doped shallow layers in silicon

Oxygen-related vacancy-type defects in ion-implanted silicon

Suppression of boron interstitial clusters in SOI using vacancy engineering

Dual carbon effect on electrical properties of high dose indium implants in silicon

Raman scattering studies of ultrashallow Sb implants in strained Si

Low-temperature processing of antimony-implanted silicon

On artefacts in the secondary ion mass spectrometry profiling of high fluence H + implants in GaAs

Growth temperature dependence for the formation of vacancy clusters in Si/Si0.64Ge0.36/Si structures

Proton implantation for isolation of n-type GaAs layers at different substrate temperatures

The effect of substrate temperature on the isolation of n-type GaAs layers using MeV boron implantation

Evaluation of BBr2+ and B++Br+ implants in silicon

The electron field emission properties of ion beam synthesised metal-dielectric nanocomposite layers on silicon substrates

Annealing characteristics of the implant-isolated n-type GaAs layers: Effects of ion species and implant temperature

Effect of proton implantation at variable temperatures and doses on the semi-insulating GaAs

Electrical characterization of Fe-doped semi-insulating InP after helium bombardment at different implant temperatures

Constraints on micro-Raman strain metrology for highly doped strained Si materials

Electron field emission properties of Co quantum dots in SiO2 matrix synthesised by ion implantation

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Indium clustering in a silicon matrix in the presence of carbon co-implantation

Enhanced n-type dopant solubility in tensile-strained Si

Ion beam synthesis of low resistivity contacts in amorphous silicon-based materials

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Suchergebnisse filtern