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Evaluation of Si and SiC SGTOs for High-Action Army Applications

IEEE transactions on magnetics, 2009-01, Vol.45 (1), p.402-406

2009

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Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

IEEE transactions on magnetics, 2007-01, Vol.43 (1), p.259-264

2007

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Half-bridge inverter using 4H-SiC gate turn-off thyristors

IEEE electron device letters, 2002-04, Vol.23 (4), p.194-196

2002

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Inductive switching of 4H-SiC gate turn-off thyristors

IEEE electron device letters, 2002-06, Vol.23 (6), p.318-320

2002

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AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Thin solid films, 2001-11, Vol.398, p.575-580

2001

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Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Journal of applied physics, 1997-06, Vol.81 (11), p.7687-7689

1997

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Silicon carbide FETs for high temperature nuclear environments

IEEE transactions on nuclear science, 1996-06, Vol.43 (3), p.1642-1648

1996

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Analysis of neutron damage in high-temperature silicon carbide JFETs

IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), 1994-12, Vol.41 (6), p.1884-1894

1994

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Device optimization and performance of 3.5 cm2 silicon SGTO for Army applications

2009 IEEE Pulsed Power Conference, 2009, p.669-674

2009

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Wide-pulse evaluation of 0.5 cm2 silicon carbide SGTO

2009 IEEE Pulsed Power Conference, 2009, p.260-263

2009

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High energy density capacitors for pulsed power applications

2009 IEEE Pulsed Power Conference, 2009, p.774-778

2009

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Silicon diode evaluated as rectifier for wide-pulse switching applications

2009 IEEE Pulsed Power Conference, 2009, p.627-630

2009

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Evaluation of Si and SiC SGTOs for High Action Army Applications

2008 14th Symposium on Electromagnetic Launch Technology, 2008, p.1-6

2008

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9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

2009 IEEE Pulsed Power Conference, 2009, p.264-269

2009

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Mobility of (112~0) and (0001) orientated 4H-SiC quantized inversion layers

International Semiconductor Device Research Symposium, 2003, 2003, p.338-339

2003

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High temperature inductive switching of SiC GTO and diode

Conference Record of the Twenty-Fifth International Power Modulator Symposium, 2002 and 2002 High-Voltage Workshop, 2002, p.207-209

2002

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Self-consistent surface mobility and interface charge modeling in conjunction with experiment of 6H-SiC MOSFETs

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497), 2001, p.572-574A

2001

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High temperature silicon carbide FETs for radiation environments

1995 IEEE Nuclear Science Symposium and Medical Imaging Conference Record, 1995, Vol.1, p.144-147 vol.1

1995

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High temperature stressing of SiC JFETs at 300/spl deg/C

Proceedings of 1994 IEEE International Reliability Physics Symposium, 1994, p.351-358

1994

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Effects of interface-trapped charge on the SiC MOSFET characteristics

1998 Fourth International High Temperature Electronics Conference. HITEC (Cat. No.98EX145), 1998, p.23-28

1998

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High-temperature switching and evaluation of 4H-SiC gate turn-off thyristors and diodes under inductive loads

IECEC '02. 2002 37th Intersociety Energy Conversion Engineering Conference, 2002, 2002, p.305-310

2002

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Evaluation of Si and SiC SGTOs for High-Action Army Applications

Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

Half-bridge inverter using 4H-SiC gate turn-off thyristors

Inductive switching of 4H-SiC gate turn-off thyristors

AlN thin films deposited by pulsed laser ablation, sputtering and filtered arc techniques

Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Silicon carbide FETs for high temperature nuclear environments

Analysis of neutron damage in high-temperature silicon carbide JFETs

Device optimization and performance of 3.5 cm2 silicon SGTO for Army applications

Wide-pulse evaluation of 0.5 cm2 silicon carbide SGTO

High energy density capacitors for pulsed power applications

Silicon diode evaluated as rectifier for wide-pulse switching applications

Evaluation of Si and SiC SGTOs for High Action Army Applications

9 kV, 1 cm×1 cm SiC super gto technology development for pulse power

Mobility of (112~0) and (0001) orientated 4H-SiC quantized inversion layers

High temperature inductive switching of SiC GTO and diode

Self-consistent surface mobility and interface charge modeling in conjunction with experiment of 6H-SiC MOSFETs

High temperature silicon carbide FETs for radiation environments

High temperature stressing of SiC JFETs at 300/spl deg/C

Effects of interface-trapped charge on the SiC MOSFET characteristics

High-temperature switching and evaluation of 4H-SiC gate turn-off thyristors and diodes under inductive loads

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