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An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

Science advances, 2021-02, Vol.7 (8)

2021

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AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-03, Vol.35 (2)

2017

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AlN/GaN HEMTs with high- Delta k ALD HfO2 or Ta2O5 gate insulation

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2420-2423

2011

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AlN/GaN HEMTs with high‐κ ALD HfO 2 or Ta 2 O 5 gate insulation

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2420-2423

2011

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AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation

Physica status solidi. C, 2011-07, Vol.8 (7-8), p.2420-2423

2011

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The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaN x by STEM-ABF and HAADF

Microscopy and microanalysis, 2020-08, Vol.26 (S2), p.2122-2123

2020

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The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaNx by STEM-ABF and HAADF

Microscopy and microanalysis, 2020-08, Vol.26 (S2), p.2122-2123

2020

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Band Alignment of Sc x Al 1– x N/GaN Heterojunctions

ACS applied materials & interfaces, 2020-11, Vol.12 (46), p.52192-52200

2020

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Band Alignment of Sc x Al1–x N/GaN Heterojunctions

ACS applied materials & interfaces, 2020-11, Vol.12 (46), p.52192-52200

2020

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Band Alignment of ScxAl1-xN/GaN Heterojunctions

ACS applied materials & interfaces, 2020-11, Vol.12 (46), p.52192-52200

2020

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Characterization of low range GaAs

Journal of electronic materials, 1995-11, Vol.24 (11), p.1753-1758

1995

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Characterization of molecular beam epitaxy grown β-Nb 2 N films and AlN/β-Nb 2 N heterojunctions on 6H-SiC substrates

Applied physics express, 2016-02, Vol.9 (2), p.21003

2016

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Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2015-11, Vol.33 (6)

2015

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Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy

Applied physics express, 2020-06, Vol.13 (6), p.65509

2020

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Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures

ACS nano, 2019-06, Vol.13 (6), p.6730-6741

2019

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Correction to "DC and Large-Signal Time-Dependent Electron Transport in Heterostructure Devices: An Investigation of the Heterostructure Barrier Varactor"

IEEE transactions on electron devices, 1997-02, Vol.44 (2), p.350-350

1997

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Crystalline Phase Control in Sc x Al x-1 N Grown by Molecular Beam Epitaxy

Microscopy and microanalysis, 2021-08, Vol.27 (S1), p.2880-2881

2021

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Crystalline Phase Control in ScxAlx-1N Grown by Molecular Beam Epitaxy

Microscopy and microanalysis, 2021-08, Vol.27 (S1), p.2880-2881

2021

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DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor

IEEE transactions on electron devices, 1995-08, Vol.42 (8), p.1393-1403

1995

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DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor

IEEE transactions on electron devices, 1995-06, Vol.42 (6), p.1070-1080

1995

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Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2020-05, Vol.38 (3)

2020

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Dynamic mode suppression and frequency tuning in S-band GaN/YIG magnetoelastic HBARs

IEEE transactions on ultrasonics, ferroelectrics, and frequency control, 2023-08, Vol.70 (8), p.1-1

2023

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Effect of Gate Insulator Thickness on RF Power Gain Degradation of Vertically Scaled GaN MIS-HEMTs at 40 GHz

IEEE transactions on device and materials reliability, 2015-12, Vol.15 (4), p.474-477

2015

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Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

APL materials, 2021-11, Vol.9 (11), p.111101-111101-9

2021

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Engineering Efficient Acoustic Power Transfer in HBARs and Other Composite Resonators

Journal of microelectromechanical systems, 2020-10, Vol.29 (5), p.1014-1019

2020

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An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

AlN/GaN/AlN resonant tunneling diodes grown by rf-plasma assisted molecular beam epitaxy on freestanding GaN

AlN/GaN HEMTs with high- Delta k ALD HfO2 or Ta2O5 gate insulation

AlN/GaN HEMTs with high‐κ ALD HfO 2 or Ta 2 O 5 gate insulation

AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation

The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaN x by STEM-ABF and HAADF

The Atomic Structure of Epitaxial Metallic Transition Metal Nitride TaNx by STEM-ABF and HAADF

Band Alignment of Sc x Al 1– x N/GaN Heterojunctions

Band Alignment of Sc x Al1–x N/GaN Heterojunctions

Band Alignment of ScxAl1-xN/GaN Heterojunctions

Characterization of low range GaAs

Characterization of molecular beam epitaxy grown β-Nb 2 N films and AlN/β-Nb 2 N heterojunctions on 6H-SiC substrates

Charge control in N-polar InAlN high-electron-mobility transistors grown by plasma-assisted molecular beam epitaxy

Control of phase purity in high scandium fraction heteroepitaxial ScAlN grown by molecular beam epitaxy

Controlling the Infrared Dielectric Function through Atomic-Scale Heterostructures

Correction to "DC and Large-Signal Time-Dependent Electron Transport in Heterostructure Devices: An Investigation of the Heterostructure Barrier Varactor"

Crystalline Phase Control in Sc x Al x-1 N Grown by Molecular Beam Epitaxy

Crystalline Phase Control in ScxAlx-1N Grown by Molecular Beam Epitaxy

DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor

DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor

Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire

Dynamic mode suppression and frequency tuning in S-band GaN/YIG magnetoelastic HBARs

Effect of Gate Insulator Thickness on RF Power Gain Degradation of Vertically Scaled GaN MIS-HEMTs at 40 GHz

Electrical properties of high permittivity epitaxial SrCaTiO3 grown on AlGaN/GaN heterostructures

Engineering Efficient Acoustic Power Transfer in HBARs and Other Composite Resonators

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