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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

Applied physics letters, 2000-06, Vol.76 (26), p.3923-3925

2000

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First AlGaN/GaN MOSFET with photoanodic gate dielectric

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-05, Vol.93 (1), p.107-111

2002

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Dry etching of GaN substrates for high-quality homoepitaxy

Applied physics letters, 1999-02, Vol.74 (8), p.1123-1125

1999

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High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers

Physica. B, Condensed matter, 1999-12, Vol.273-274, p.66-69

1999

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Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

Physical review. B, Condensed matter, 1999-07, Vol.60 (3), p.1471-1473

1999

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Multiple-step annealing for 50% enhanced p-conductivity of GaN

Journal of crystal growth, 2001-09, Vol.230 (3), p.549-553

2001

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First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.715-716

2001

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Characterization of etched facets for GaN-based lasers

Journal of crystal growth, 2001-09, Vol.230 (3), p.554-557

2001

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Substrates for wide bandgap nitrides

Journal of materials science. Materials in electronics, 2002-11, Vol.13 (11), p.659-664

2002

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Extraction Efficiency of GaN-Based LEDs

Physica status solidi. A, Applied research, 2001-11, Vol.188 (1), p.127-130

2001

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GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics

Journal of crystal growth, 2001-09, Vol.230 (3), p.512-516

2001

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Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN

Journal of applied physics, 1999-12, Vol.86 (11), p.6256-6260

1999

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MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices

Progress in crystal growth and characterization of materials, 2000, Vol.41 (1), p.57-83

2000

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Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

Applied physics letters, 1999-08, Vol.75 (8), p.1098-1100

1999

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High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

physica status solidi (b), 1999-11, Vol.216 (1), p.5-9

1999

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Low resistive p -type GaN using two-step rapid thermal annealing processes

Journal of applied physics, 2001-06, Vol.89 (12), p.8339-8341

2001

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Ohmic Heating of InGaN LEDs during Operation: Determination of the Junction Temperature and Its Influence on Device Performance

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.783-786

1999

Volltextzugriff (PDF)

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Electronics letters, 2001-05, Vol.37 (11), p.1-1

2001

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Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well- Light-Emitting Diode by Scanning Electroluminescence Microscopy

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2414-2416

2000

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GaN/SiC Quasi-Substrates for GaN-Based LEDs

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.99-102

1999

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AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

MRS proceedings, 2001, Vol.693, Article I6.51.1

2001

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Scanning Electroluminescence Microscopy: A Powerful Novel Characterization Tool for Light Emitting Diodes

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.119-123

1999

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GaN Homoepitaxy for Device Applications

MRS proceedings, 1998, Vol.537, Article G10.2

1998

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GaN Homoepitaxy for Device Applications

MRS Internet journal of nitride semiconductor research, 1999, Vol.4 (S1), p.878-889

1999

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Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor Pressure

Physica status solidi. A, Applied research, 2000-07, Vol.180 (1), p.257-260

2000

Volltextzugriff (PDF)

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Photoinduced oxide film formation on n -type GaN surfaces using alkaline solutions

First AlGaN/GaN MOSFET with photoanodic gate dielectric

Dry etching of GaN substrates for high-quality homoepitaxy

High-resolution PL spectra of donor- and acceptor-bound excitons in homoepitaxial GaN-layers

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

Multiple-step annealing for 50% enhanced p-conductivity of GaN

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Characterization of etched facets for GaN-based lasers

Substrates for wide bandgap nitrides

Extraction Efficiency of GaN-Based LEDs

GaN-based lasers on SiC: influence of mirror reflectivity on L–I characteristics

Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN

MOVPE homoepitaxy of high-quality GaN: Crystal growth and devices

Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

Low resistive p -type GaN using two-step rapid thermal annealing processes

Ohmic Heating of InGaN LEDs during Operation: Determination of the Junction Temperature and Its Influence on Device Performance

First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide

Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well- Light-Emitting Diode by Scanning Electroluminescence Microscopy

GaN/SiC Quasi-Substrates for GaN-Based LEDs

AlGaN/GaN based MOSHFETs with Different Gate Dielectrics and Treatments

Scanning Electroluminescence Microscopy: A Powerful Novel Characterization Tool for Light Emitting Diodes

GaN Homoepitaxy for Device Applications

GaN Homoepitaxy for Device Applications

Hydride Vapour Phase Epitaxy Growth of GaN Layers under Reduced Reactor Pressure

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