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Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data

Journal of Telecommunications and Information Technology, 2023-06 (2), p.78-85

2023

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Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications

ACS omega, 2021-07, Vol.6 (29), p.18770-18781

2021

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Transfer-free fabrication of graphene transistors

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2012-05, Vol.30 (3), p.03D114-03D114-5

2012

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Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications

ECS journal of solid state science and technology, 2015-01, Vol.4 (5), p.Q46-Q50

2015

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Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics

Applied surface science, 2014-02, Vol.291, p.83-86

2014

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Process integration and nanometer-scale electrical characterization of crystalline high- k gate dielectrics

Microelectronics and reliability, 2005-05, Vol.45 (5), p.790-793

2005

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Gate dielectrics: process integration issues and electrical properties

Journal of Telecommunications and Information Technology, 2005-03 (1), p.7-10

Schwalke, Udo

2005

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On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices

IEEE transactions on electron devices, 2017-09, Vol.64 (9), p.3808-3815

2017

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Formation Process of Nickel Nano-Clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors

ECS transactions, 2015-03, Vol.64 (38), p.1-11

2015

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Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors

ECS transactions, 2018-07, Vol.86 (15), p.13-21

2018

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Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors

ECS transactions, 2018, Vol.86 (9), p.41-49

2018

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Ultra-thick gate oxides: charge generation and its impact on reliability

Microelectronics and reliability, 2001-07, Vol.41 (7), p.1007-1010

2001

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Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications

ECS transactions, 2016, Vol.75 (13), p.11-16

2016

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Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications

ECS transactions, 2016, Vol.75 (13), p.57-63

2016

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Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection

ECS journal of solid state science and technology, 2018, Vol.7 (7), p.Q3108-Q3113

2018

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Transfer-Free Bilayer Graphene FETs: Application as Memory Devices

ECS transactions, 2013, Vol.53 (1), p.131-137

2013

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Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High- \kappa Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio

IEEE electron device letters, 2008-12, Vol.29 (12), p.1349-1352

2008

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Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices

ECS transactions, 2007, Vol.11 (3), p.301-315

Schwalke, Udo

2007

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Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy

ECS transactions, 2007, Vol.10 (1), p.129-140

Schwalke, Udo

2007

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Dopant-Free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications

ECS transactions, 2013, Vol.53 (5), p.105-114

2013

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Transfer-free grown bilayer graphene transistors for digital applications

Solid-state electronics, 2013-03, Vol.81, p.86-90

2013

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Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications

ECS transactions, 2014-08, Vol.64 (12), p.11-24

2014

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Damascene TiN-Gd2O3-gate stacks: Gentle fabrication and electrical properties

Microelectronic engineering, 2011-12, Vol.88 (12), p.3393-3398

2011

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Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes

ECS transactions, 2016, Vol.75 (13), p.65-71

2016

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Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications

ECS transactions, 2008, Vol.13 (22), p.39-45

2008

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Evaluation of MOSFETs with crystalline high-k gate-dielectrics: device simulation and experimental data

Superior Sensitivity and Optical Response of Blue Phosphorene and Its Doped Systems for Gas Sensing Applications

Transfer-free fabrication of graphene transistors

Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications

Insitu CCVD grown bilayer graphene transistors for applications in nanoelectronics

Process integration and nanometer-scale electrical characterization of crystalline high- k gate dielectrics

Gate dielectrics: process integration issues and electrical properties

On the Physical Behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices

Formation Process of Nickel Nano-Clusters for Catalytic Growth of Carbon Nanotubes for Use in Field-Effect Transistors

Selectivity and Cross-Sensitivity of Transfer-Free Fabricated Nanocrystalline Graphene Field-Effect Gas Sensors

Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors

Ultra-thick gate oxides: charge generation and its impact on reliability

Enhancement of the Extent of In Situ Transfer-Free Few-Layer Graphene by Solid Carbon Source for Use in Gas Sensor Applications

Favorable Combination of Schottky Barrier and Junctionless Properties in Field-Effect Transistors for High Temperature Applications

Transfer-Free In Situ CCVD Grown Nanocrystalline Graphene for Sub-PPMV Ammonia Detection

Transfer-Free Bilayer Graphene FETs: Application as Memory Devices

Large-Scale In Situ Fabrication of Voltage-Programmable Dual-Layer High- \kappa Dielectric Carbon Nanotube Memory Devices With High On/Off Ratio

Application of Scanning Probe Microscopy Techniques for Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices

Structural and Electrical Characterization of Dielectrics, Carbon Nanotubes and Nanoelectronic Devices by Means of Scanning Probe Microscopy

Dopant-Free CMOS on SOI: Multi-Gate Si-Nanowire Transistors for Logic and Memory Applications

Transfer-free grown bilayer graphene transistors for digital applications

Novel Electrostatically Doped Planar Field-Effect Transistor for High Temperature Applications

Damascene TiN-Gd2O3-gate stacks: Gentle fabrication and electrical properties

Evaluation of Different High Κ Materials for In situ Growth of Carbon Nanotubes

Fabrication of Ultra-Sensitive Carbon Nanotube Field-Effect Sensors (CNTFES) for Biomedical Applications

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