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White light‐emitting diodes: History, progress, and future

Laser & photonics reviews, 2017-03, Vol.11 (2), p.np-n/a

2017

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Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Scientific reports, 2020-12, Vol.10 (1), p.22059-22059, Article 22059

2020

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Solid-State Light Sources Getting Smart

Science (American Association for the Advancement of Science), 2005-05, Vol.308 (5726), p.1274-1278

2005

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Transcending the replacement paradigm of solid-state lighting

Optics express, 2008-12, Vol.16 (26), p.21835

2008

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Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Applied physics letters, 2011-12, Vol.99 (25), p.253506-253506-3

2011

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Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

Applied physics letters, 2011-12, Vol.99 (25), p.251115-251115-3

2011

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Realization of a near-perfect antireflection coating for silicon solar energy utilization

Optics letters, 2008-11, Vol.33 (21), p.2527

2008

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Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

Light, science & applications, 2015-04, Vol.4 (4), p.e263-e263

2015

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Energy bandgap variation in oblique angle-deposited indium tin oxide

Applied physics letters, 2016-01, Vol.108 (4)

2016

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Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm

Optics express, 2008-04, Vol.16 (8), p.5290-5298

2008

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Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes

Optics express, 2011-09, Vol.19 Suppl 5 (S5), p.A1135-A1140

2011

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Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes

Applied physics letters, 2013-09, Vol.103 (12), p.121103

2013

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An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

Scientific reports, 2016-03, Vol.6 (1), p.22537-22537, Article 22537

2016

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Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

Journal of applied physics, 2016-01, Vol.119 (2)

2016

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GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

Applied physics letters, 2013-11, Vol.103 (20)

2013

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Efficiency droop in light-emitting diodes: Challenges and countermeasures

Laser & photonics reviews, 2013-05, Vol.7 (3), p.408-421

2013

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Efficiency droop in AlGaInP and GaInN light-emitting diodes

Applied physics letters, 2012-03, Vol.100 (11), p.111106-111106-4

2012

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Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

Applied physics letters, 2012-08, Vol.101 (6), p.61103

2012

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A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

AIP advances, 2024-04, Vol.14 (4), p.045215-045215-6

2024

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“U-turn” feature in the efficiency-versus-current curve of GaInN/GaN light-emitting diodes

Applied physics letters, 2014-12, Vol.105 (22)

2014

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The Effect of Imbalanced Carrier Transport on the Efficiency Droop in GaInN-Based Blue and Green Light-Emitting Diodes

Energies (Basel), 2017, Vol.10 (9), p.1277

2017

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High-performance antireflection coatings utilizing nanoporous layers

MRS bulletin, 2011-06, Vol.36 (6), p.434-438

2011

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Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Applied physics letters, 2012-12, Vol.101 (24)

2012

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Origin of efficiency droop in GaN-based light-emitting diodes

Applied physics letters, 2007-10, Vol.91 (18), p.183507-183507-3

2007

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Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

Applied physics letters, 2012-04, Vol.100 (16), p.161106-161106-4

2012

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White light‐emitting diodes: History, progress, and future

Dual-functional ultraviolet photodetector with graphene electrodes on AlGaN/GaN heterostructure

Solid-State Light Sources Getting Smart

Transcending the replacement paradigm of solid-state lighting

Transport-mechanism analysis of the reverse leakage current in GaInN light-emitting diodes

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

Realization of a near-perfect antireflection coating for silicon solar energy utilization

Overcoming the fundamental light-extraction efficiency limitations of deep ultraviolet light-emitting diodes by utilizing transverse-magnetic-dominant emission

Energy bandgap variation in oblique angle-deposited indium tin oxide

Design of multilayer antireflection coatings made from co-sputtered and low-refractive-index materials by genetic algorithm

Effects of the refractive index of the encapsulant on the light-extraction efficiency of light-emitting diodes

Analysis of the temperature dependence of the forward voltage characteristics of GaInN light-emitting diodes

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection

Efficiency droop in light-emitting diodes: Challenges and countermeasures

Efficiency droop in AlGaInP and GaInN light-emitting diodes

Polarized light emission from GaInN light-emitting diodes embedded with subwavelength aluminum wire-grid polarizers

A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors

“U-turn” feature in the efficiency-versus-current curve of GaInN/GaN light-emitting diodes

The Effect of Imbalanced Carrier Transport on the Efficiency Droop in GaInN-Based Blue and Green Light-Emitting Diodes

High-performance antireflection coatings utilizing nanoporous layers

Method for determining the radiative efficiency of GaInN quantum wells based on the width of efficiency-versus-carrier-concentration curve

Origin of efficiency droop in GaN-based light-emitting diodes

Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency

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