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Wireless Sensor Platform for Cultural Heritage Monitoring and Modeling System

Sensors (Basel, Switzerland), 2017-08, Vol.17 (9), p.1998

2017

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First realization of the piezoelectronic stress-based transduction device

Nanotechnology, 2015-09, Vol.26 (37), p.375201-375201

2015

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Atomic layer deposition of Ge2Sb2Te5 thin films

Microelectronic engineering, 2009-07, Vol.86 (7-9), p.1946-1949

2009

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Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO2 Interface

The journal of physical chemistry. B, 2005-02, Vol.109 (5), p.1834-1838

2005

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The PiezoElectronic Switch: A Path to High Speed, Low Energy Electronics

Advances in Science and Technology, 2014-10, Vol.90, p.93-102

2014

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Influence of Bottom Contact Material on the Selective Chemical Vapor Deposition of Crystalline GeSbTe Alloys

MRS proceedings, 2010, Vol.1251 (1), Article 1251-H06-10

2010

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The formation of chlorine-induced alterations in daguerreotype image particles: a high resolution SEM-EDS study

Applied physics. A, Materials science & processing, 2011-10, Vol.105 (1), p.55-63

2011

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Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO 2 Interface

The journal of physical chemistry. B, 2005-02, Vol.109 (5), p.1834-1838

2005

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Dynamic Resistance-A Metric for Variability Characterization of Phase-Change Memory

IEEE electron device letters, 2009-02, Vol.30 (2), p.126-129

2009

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Atomic layer deposition of Ge@@d2@Sb@@d2@Te@@d5@ thin films

Microelectronic engineering, 2009-09, Vol.86 (7-9), p.1946-1949

2009

Volltextzugriff (PDF)

Atomic layer deposition of Ge 2Sb 2Te 5 thin films

Microelectronic engineering, 2009, Vol.86 (7), p.1946-1949

2009

Volltextzugriff (PDF)

Electrostatic field and partial Fermi level pinning at the pentacene-SiO(2) interface

The journal of physical chemistry. B, 2005-02, Vol.109 (5), p.1834-1838

2005

Volltextzugriff (PDF)

Demonstration of CAM and TCAM Using Phase Change Devices

2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-4

2011

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The impact of melting during reset operation on the reliability of phase change memory

2012 IEEE International Reliability Physics Symposium (IRPS), 2012, p.6C.2.1-6C.2.6

2012

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The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge 2 Sb 2 Te 5

MRS proceedings, 2009, Vol.1160, Article 1160-H13-08

2009

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The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge2Sb2Te5

MRS proceedings, 2009, Vol.1160 (1)

2009

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Magnetic arrays and their resonant frequencies for the production of binary codes

IEEE transactions on magnetics, 1998-09, Vol.34 (5), p.3765-3771

1998

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A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory

2011 3rd IEEE International Memory Workshop (IMW), 2011, p.1-4

2011

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Phase-Change Memory Development Status

2007 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA), 2007, p.1-2

2007

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REACTION OF SILICON SINGLE CRYSTALS WITH NITROGEN ATOMS

SCHROTT, ALEJANDRO GABRIEL

1982

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Carbon dots for copper detection with down and upconversion fluorescent properties as excitation sources

Chemical communications (Cambridge, England), 2013-01, Vol.49 (11), p.1103-1105

2013

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Dementia and COVID-19 in Chile, New Zealand and Germany: A Research Agenda for Cross-Country Learning for Resilience in Health Care Systems

Sustainability, 2021-09, Vol.13 (18), p.10247

2021

Volltextzugriff (PDF)

Adolescent stress alters synaptic plasticity: Is PKMzeta the mediator?

The FASEB journal, 2010-04, Vol.24 (S1), p.810.7-810.7

2010

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Carbon dots for copper detection with down and upconversion fluorescent properties as excitation sourcesElectronic supplementary information (ESI) available: Experimental details. See DOI: 10.1039/c2cc36450f

2013-01

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Wireless Sensor Platform for Cultural Heritage Monitoring and Modeling System

First realization of the piezoelectronic stress-based transduction device

Atomic layer deposition of Ge2Sb2Te5 thin films

Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO2 Interface

The PiezoElectronic Switch: A Path to High Speed, Low Energy Electronics

Influence of Bottom Contact Material on the Selective Chemical Vapor Deposition of Crystalline GeSbTe Alloys

The formation of chlorine-induced alterations in daguerreotype image particles: a high resolution SEM-EDS study

Electrostatic Field and Partial Fermi Level Pinning at the Pentacene−SiO 2 Interface

Dynamic Resistance-A Metric for Variability Characterization of Phase-Change Memory

Atomic layer deposition of Ge@@d2@Sb@@d2@Te@@d5@ thin films

Atomic layer deposition of Ge 2Sb 2Te 5 thin films

Electrostatic field and partial Fermi level pinning at the pentacene-SiO(2) interface

Demonstration of CAM and TCAM Using Phase Change Devices

The impact of melting during reset operation on the reliability of phase change memory

The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge 2 Sb 2 Te 5

The Influence of Nitrogen Doping on the Chemical and Local Bonding Environment of Amorphous and Crystalline Ge2Sb2Te5

Magnetic arrays and their resonant frequencies for the production of binary codes

A Novel Reconfigurable Sensing Scheme for Variable Level Storage in Phase Change Memory

Phase-Change Memory Development Status

REACTION OF SILICON SINGLE CRYSTALS WITH NITROGEN ATOMS

Carbon dots for copper detection with down and upconversion fluorescent properties as excitation sources

Dementia and COVID-19 in Chile, New Zealand and Germany: A Research Agenda for Cross-Country Learning for Resilience in Health Care Systems

Adolescent stress alters synaptic plasticity: Is PKMzeta the mediator?

Carbon dots for copper detection with down and upconversion fluorescent properties as excitation sourcesElectronic supplementary information (ESI) available: Experimental details. See DOI: 10.1039/c2cc36450f

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