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Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

Journal of applied physics, 2003-07, Vol.94 (1), p.1-18

2003

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Semiconductor Material and Device Characterization

Schroder, Dieter K

3rd ed., 2006

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Some Semiconductor Device Physics Considerations and Clarifications

IEEE transactions on electron devices, 2012-07, Vol.59 (7), p.1993-1996

2012

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Inherent diode isolation in programmable metallization cell resistive memory elements

Applied physics. A, Materials science & processing, 2011-03, Vol.102 (4), p.817-826

2011

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Inherent diode isolation in programmable metallization cell resistive memory elements

Applied physics. A, Materials science & processing, 2011-03, Vol.102 (4), p.817-826

2011

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Carrier Recombination Lifetime Measurement in Silicon Epitaxial Layers Using Optically Excited MOS Capacitor Technique

IEEE transactions on electron devices, 2015-05, Vol.62 (5), p.1553-1560

2015

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Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers

IEEE transactions on electron devices, 2013-08, Vol.60 (8), p.2592-2597

2013

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A Fast Technique to Screen Carrier Generation Lifetime Using DLTS on MOS Capacitors

IEEE transactions on electron devices, 2014-09, Vol.61 (9), p.3282-3288

2014

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Negative bias temperature instability: What do we understand?

Microelectronics and reliability, 2007-06, Vol.47 (6), p.841-852

Schroder, Dieter K.

2007

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Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

IEEE transactions on electron devices, 2010-08, Vol.57 (8), p.1910-1923

2010

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Contactless surface charge semiconductor characterization

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.196-210

Schroder, Dieter K.

2002

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Pseudo-MOSFET Drain-Current Transients: Influence of the Substrate

IEEE electron device letters, 2009-09, Vol.30 (9), p.993-995

2009

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Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient Behavior

IEEE transactions on electron devices, 2009-06, Vol.56 (6), p.1269-1276

2009

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Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a flash EEPROM

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1361-1368

1998

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Low-Frequency-Noise Spectroscopy of SIMOX and Bonded SOI Wafers

IEEE transactions on electron devices, 2007-12, Vol.54 (12), p.3378-3382

2007

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Effect of surface preparation on the current-voltage behavior of mercury-probe pseudo MOSFETs

IEEE transactions on electron devices, 2006-04, Vol.53 (4), p.769-774

2006

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Scaled silicon MOSFETs: degradation of the total gate capacitance

IEEE transactions on electron devices, 1997-04, Vol.44 (4), p.584-587

1997

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Latent Iron in Silicon

Japanese Journal of Applied Physics, 2001-09, Vol.40 (9A), p.L915

2001

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A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.565-571

2008

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Coplanar waveguides and microwave inductors on silicon substrates

IEEE transactions on microwave theory and techniques, 1995-09, Vol.43 (9), p.2016-2022

1995

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Nonvolatile floating-gate memory programming enhancement using well bias

IEEE transactions on electron devices, 2006-02, Vol.53 (2), p.258-262

2006

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Surface voltage and surface photovoltage: history, theory and applications

Measurement science & technology, 2001-03, Vol.12 (3), p.R16-R31

Schroder, Dieter K

2001

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Semiconductor Material and Device Characterization

Schroder, Dieter K

3, 2015

Volltextzugriff (PDF)

PROGRESS IN SIC MATERIALS/DEVICES AND THEIR COMPETITION

International journal of high speed electronics, 2012-03, Vol.21 (1), p.1250009

SCHRODER, DIETER K.

2012

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Abnormal transconductance and transient effects in partially depleted SOI MOSFETs

Solid-state electronics, 1999, Vol.43 (1), p.51-56

1999

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Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing

Semiconductor Material and Device Characterization

Some Semiconductor Device Physics Considerations and Clarifications

Inherent diode isolation in programmable metallization cell resistive memory elements

Inherent diode isolation in programmable metallization cell resistive memory elements

Carrier Recombination Lifetime Measurement in Silicon Epitaxial Layers Using Optically Excited MOS Capacitor Technique

Modified Pulsed MOS Capacitor for Characterization of Ultraclean Thin p/p+ Silicon Epitaxial Layers

A Fast Technique to Screen Carrier Generation Lifetime Using DLTS on MOS Capacitors

Negative bias temperature instability: What do we understand?

Carrier Generation Lifetimes in 4H-SiC MOS Capacitors

Contactless surface charge semiconductor characterization

Pseudo-MOSFET Drain-Current Transients: Influence of the Substrate

Pseudo-MOSFET Substrate Effects of Drain Current Hysteresis and Transient Behavior

Degradation of thin tunnel gate oxide under constant Fowler-Nordheim current stress for a flash EEPROM

Low-Frequency-Noise Spectroscopy of SIMOX and Bonded SOI Wafers

Effect of surface preparation on the current-voltage behavior of mercury-probe pseudo MOSFETs

Scaled silicon MOSFETs: degradation of the total gate capacitance

Latent Iron in Silicon

A "Probe-Lift" MOS-Capacitor Technique for Measuring Very Low Oxide Leakage Currents and Their Effect on Generation Lifetime Extraction

Coplanar waveguides and microwave inductors on silicon substrates

Nonvolatile floating-gate memory programming enhancement using well bias

Surface voltage and surface photovoltage: history, theory and applications

Semiconductor Material and Device Characterization

PROGRESS IN SIC MATERIALS/DEVICES AND THEIR COMPETITION

Abnormal transconductance and transient effects in partially depleted SOI MOSFETs

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