UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

ELDRS in Bipolar Linear Circuits: A Review

IEEE transactions on nuclear science, 2009-08, Vol.56 (4), p.1894-1908

2009

Volltextzugriff (PDF)

Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3166-3171

2004

Volltextzugriff (PDF)

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2506-2511

2007

Volltextzugriff (PDF)

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

IEEE transactions on nuclear science, 2003-12, Vol.50 (6), p.1791-1796

2003

Volltextzugriff (PDF)

The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2125-2131

2005

Volltextzugriff (PDF)

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2674-2683

2002

Volltextzugriff (PDF)

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

IEEE transactions on nuclear science, 2004-04, Vol.51 (2), p.293-297

2004

Volltextzugriff (PDF)

Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2986-2991

2008

Volltextzugriff (PDF)

Physical model for enhanced interface-trap formation at low dose rates

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.2650-2655

2002

Volltextzugriff (PDF)

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2106-2112

2008

Volltextzugriff (PDF)

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2303-2311

2007

Volltextzugriff (PDF)

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2943-2947

2008

Volltextzugriff (PDF)

Effects of hydrogen motion on interface trap formation and annealing

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3158-3165

2004

Volltextzugriff (PDF)

Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2210-2217

2007

Volltextzugriff (PDF)

Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2174-2180

2007

Volltextzugriff (PDF)

Impact of Ion Energy and Species on Single Event Effects Analysis

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2312-2321

2007

Volltextzugriff (PDF)

Single Event Mechanisms in 90 nm Triple-Well CMOS Devices

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2948-2956

2008

Volltextzugriff (PDF)

Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2407-2412

2007

Volltextzugriff (PDF)

Total-dose radiation response of hafnium-silicate capacitors

IEEE transactions on nuclear science, 2002-12, Vol.49 (6), p.3191-3196

2002

Volltextzugriff (PDF)

Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2419-2425

2007

Volltextzugriff (PDF)

Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes

IEEE transactions on nuclear science, 2008-06, Vol.55 (3), p.1708-1713

2008

Volltextzugriff (PDF)

Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2886-2894

2008

Volltextzugriff (PDF)

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3259-3264

2008

Volltextzugriff (PDF)

Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias

IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.2265-2271

2005

Volltextzugriff (PDF)

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2880-2885

2008

Volltextzugriff (PDF)

1 – 25 von 381

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(316)
Mit Volltextzugriff
(374)

Publikationsform

Sprache

Englisch
(381)
Japanisch
(2)

Erscheinungsjahr

n.n

Thema

Science & Technology
(294)
Technology
(291)
Engineering
(285)
Engineering, Electrical & Electronic
(285)
Nuclear Science & Technology
(203)
Degradation
(121)
Electronics
(90)
Radiation Effects
(78)
Physics
(77)
Ionizing Radiation
(73)
Voltage
(70)
Mosfets
(64)
Devices
(63)
Exact Sciences And Technology
(63)
Physical Sciences
(63)
Applied Sciences
(61)
Protons
(57)
Testing
(56)
Annealing
(55)
Semiconductor Devices
(55)

15 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

ELDRS in Bipolar Linear Circuits: A Review

Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

Characterization of Digital Single Event Transient Pulse-Widths in 130-nm and 90-nm CMOS Technologies

Proton-irradiation effects on AlGaN/AlN/GaN high electron mobility transistors

The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM

Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices

The energy dependence of proton-induced degradation in AlGaN/GaN high electron mobility transistors

Electron Capture, Hydrogen Release, and Enhanced Gain Degradation in Linear Bipolar Devices

Physical model for enhanced interface-trap formation at low dose rates

Electrostatic Mechanisms Responsible for Device Degradation in Proton Irradiated AlGaN/AlN/GaN HEMTs

Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Effects of hydrogen motion on interface trap formation and annealing

Enhanced TID Susceptibility in Sub-100 nm Bulk CMOS I/O Transistors and Circuits

Band-to-Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

Impact of Ion Energy and Species on Single Event Effects Analysis

Single Event Mechanisms in 90 nm Triple-Well CMOS Devices

Effect of Well and Substrate Potential Modulation on Single Event Pulse Shape in Deep Submicron CMOS

Total-dose radiation response of hafnium-silicate capacitors

Monte-Carlo Based On-Orbit Single Event Upset Rate Prediction for a Radiation Hardened by Design Latch

Effects of Guard Bands and Well Contacts in Mitigating Long SETs in Advanced CMOS Processes

Integrating Circuit Level Simulation and Monte-Carlo Radiation Transport Code for Single Event Upset Analysis in SEU Hardened Circuitry

Gate-Length and Drain-Bias Dependence of Band-to-Band Tunneling-Induced Drain Leakage in Irradiated Fully Depleted SOI Devices

Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

Suchergebnisse filtern