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Antiviral Drug Discovery for the Treatment of COVID-19 Infections

Viruses, 2022-05, Vol.14 (5), p.961

2022

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Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.22-28

2020

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Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors

Journal of applied physics, 2024-10, Vol.136 (14)

2024

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Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2918-2924

2011

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Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Journal of applied physics, 2024-01, Vol.135 (2)

2024

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Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1430-1435

2021

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Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Impact of Technology Scaling on SRAM Soft Error Rates

IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3512-3518

2014

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Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.256-261

2018

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Alpha Particle-Induced Persistent Effects in a COTS 3-D-Integrated CMOS Imager

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.759-769

2024

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Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

Applied physics letters, 2024-03, Vol.124 (13)

2024

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Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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Charge Collection and Charge Sharing in a 130 nm CMOS Technology

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3253-3258

2006

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From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1731-1739

2013

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Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Journal of applied physics, 2016-04, Vol.119 (16)

2016

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Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs

IEEE transactions on nuclear science, 2024-01, Vol.71 (1), p.80-87

2024

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Single-Event Burnout in Vertical β -Ga₂O₃ Diodes With Pt/PtO ₓ Schottky Contacts and High- k Field-Plate Dielectrics

IEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.515-521

2024

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Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

IEEE transactions on nuclear science, 2019-01, Vol.66 (1), p.337-343

2019

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Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

IEEE transactions on nuclear science, 2018-06, Vol.65 (6), p.1227-1238

2018

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Bias Dependence of Total-Dose Effects in Bulk FinFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4476-4482

2013

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Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

IEEE transactions on nuclear science, 2018-02, Vol.65 (2), p.712-718

2018

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Probing the Single-Event Sensitivity of a COTS 3D-Integrated Imager with Alpha Particle Irradiation

IEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.1-1

2023

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Electron-Induced Single-Event Upsets in Static Random Access Memory

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4122-4129

2013

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Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

IEEE transactions on nuclear science, 2004-12, Vol.51 (6), p.3166-3171

2004

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Antiviral Drug Discovery for the Treatment of COVID-19 Infections

Ion-Induced Energy Pulse Mechanism for Single-Event Burnout in High-Voltage SiC Power MOSFETs and Junction Barrier Schottky Diodes

Temperature dependence of the low-frequency noise in AlGaN/GaN fin field effect transistors

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

Low-frequency noise and defects in AlGaAs/InGaAs/GaAs pseudomorphic high-electron mobility transistors

Effects of Breakdown Voltage on Single-Event Burnout Tolerance of High-Voltage SiC Power MOSFETs

Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

Impact of Technology Scaling on SRAM Soft Error Rates

Single-Event Burnout of SiC Junction Barrier Schottky Diode High-Voltage Power Devices

Alpha Particle-Induced Persistent Effects in a COTS 3-D-Integrated CMOS Imager

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

Low-Energy Ion-Induced Single-Event Burnout in Gallium Oxide Schottky Diodes

Charge Collection and Charge Sharing in a 130 nm CMOS Technology

From Displacement Damage to ELDRS: Fifty Years of Bipolar Transistor Radiation Effects at the NSREC

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Defect and Impurity-Center Activation and Passivation in Irradiated AlGaN/GaN HEMTs

Single-Event Burnout in Vertical β -Ga₂O₃ Diodes With Pt/PtO ₓ Schottky Contacts and High- k Field-Plate Dielectrics

Estimating Terrestrial Neutron-Induced SEB Cross Sections and FIT Rates for High-Voltage SiC Power MOSFETs

Defects and Low-Frequency Noise in Irradiated Black Phosphorus MOSFETs With HfO2 Gate Dielectrics

Bias Dependence of Total-Dose Effects in Bulk FinFETs

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Predicting Muon-Induced SEU Rates for a 28-nm SRAM Using Protons and Heavy Ions to Calibrate the Sensitive Volume Model

Probing the Single-Event Sensitivity of a COTS 3D-Integrated Imager with Alpha Particle Irradiation

Electron-Induced Single-Event Upsets in Static Random Access Memory

Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides

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